{"id":"https://openalex.org/W2538177767","doi":"https://doi.org/10.1109/idt.2015.7396734","title":"A low-temperature-coefficient curvature-compensated bandgap reference with mismatch attenuation","display_name":"A low-temperature-coefficient curvature-compensated bandgap reference with mismatch attenuation","publication_year":2015,"publication_date":"2015-12-01","ids":{"openalex":"https://openalex.org/W2538177767","doi":"https://doi.org/10.1109/idt.2015.7396734","mag":"2538177767"},"language":"en","primary_location":{"id":"doi:10.1109/idt.2015.7396734","is_oa":false,"landing_page_url":"https://doi.org/10.1109/idt.2015.7396734","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 10th International Design & Test Symposium (IDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012380414","display_name":"Mahitab Eladwy","orcid":"https://orcid.org/0000-0002-3572-4004"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Mahitab F. Eladwy","raw_affiliation_strings":["Electronics and Electrical Communications Engineering Department, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Electrical Communications Engineering Department, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061566407","display_name":"Sameh A. Ibrahim","orcid":"https://orcid.org/0000-0001-8049-1441"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Sameh A. Ibrahim","raw_affiliation_strings":["Electronics and Electrical Communications Engineering Department, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Electrical Communications Engineering Department, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111972259","display_name":"Mohamed Dessouky","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Mohamed Dessouky","raw_affiliation_strings":["Electronics and Electrical Communications Engineering Department, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Electrical Communications Engineering Department, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5012380414"],"corresponding_institution_ids":["https://openalex.org/I107720978"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.22450958,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"44","last_page":"48"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.9237793684005737},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.8909534215927124},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.7753362655639648},{"id":"https://openalex.org/keywords/power-supply-rejection-ratio","display_name":"Power supply rejection ratio","score":0.6862039566040039},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6822971701622009},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6222028732299805},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6049460172653198},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5824467539787292},{"id":"https://openalex.org/keywords/line-regulation","display_name":"Line regulation","score":0.566652774810791},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5048919320106506},{"id":"https://openalex.org/keywords/silicon-bandgap-temperature-sensor","display_name":"Silicon bandgap temperature sensor","score":0.4886391758918762},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.46163058280944824},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44278404116630554},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.4345273971557617},{"id":"https://openalex.org/keywords/pull-up-resistor","display_name":"Pull-up resistor","score":0.4299449324607849},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16278785467147827},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.12503081560134888}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.9237793684005737},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.8909534215927124},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.7753362655639648},{"id":"https://openalex.org/C15892472","wikidata":"https://www.wikidata.org/wiki/Q1482413","display_name":"Power supply rejection ratio","level":4,"score":0.6862039566040039},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6822971701622009},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6222028732299805},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6049460172653198},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5824467539787292},{"id":"https://openalex.org/C2777901765","wikidata":"https://www.wikidata.org/wiki/Q6553328","display_name":"Line regulation","level":5,"score":0.566652774810791},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5048919320106506},{"id":"https://openalex.org/C168032602","wikidata":"https://www.wikidata.org/wiki/Q7515014","display_name":"Silicon bandgap temperature sensor","level":5,"score":0.4886391758918762},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46163058280944824},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44278404116630554},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.4345273971557617},{"id":"https://openalex.org/C61818909","wikidata":"https://www.wikidata.org/wiki/Q1987617","display_name":"Pull-up resistor","level":5,"score":0.4299449324607849},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16278785467147827},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.12503081560134888},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/idt.2015.7396734","is_oa":false,"landing_page_url":"https://doi.org/10.1109/idt.2015.7396734","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 10th International Design & Test Symposium (IDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1504370941","https://openalex.org/W1969915288","https://openalex.org/W1972682015","https://openalex.org/W1998284495","https://openalex.org/W2002682182","https://openalex.org/W2067658274","https://openalex.org/W2133201500","https://openalex.org/W2147547981"],"related_works":["https://openalex.org/W2347289947","https://openalex.org/W2270379489","https://openalex.org/W2251517804","https://openalex.org/W2364893780","https://openalex.org/W3182889680","https://openalex.org/W1575870214","https://openalex.org/W2388455624","https://openalex.org/W2385198939","https://openalex.org/W2361293523","https://openalex.org/W1754632526"],"abstract_inverted_index":{"A":[0,37,102],"high-order":[1],"curvature-compensated":[2],"bandgap":[3],"reference":[4,80],"(BGR)":[5],"with":[6,74],"low":[7,49],"temperature":[8,94],"coefficient":[9],"(TC)":[10],"is":[11,19,40,68,82,107,131],"proposed":[12,134],"in":[13,62,70,92],"this":[14],"paper.":[15],"The":[16,66,78,127,133],"curvature":[17],"compensation":[18],"maintained":[20],"through":[21],"the":[22,44,60,111],"use":[23],"of":[24,89,129,140,147],"Pplus":[25],"poly":[26,30],"resistor":[27,31,35],"and":[28,57,64,85,121,143],"Nplus":[29],"to":[32,46,58,99,116],"achieve":[33],"temperature-dependent":[34],"ratios.":[36],"T-resistor":[38],"structure":[39],"adopted":[41],"which":[42],"enables":[43],"BGR":[45,135],"work":[47],"under":[48],"supply":[50,113],"voltage":[51,56,81],"or":[52],"high":[53,103],"MOSFET":[54],"threshold":[55],"reduce":[59],"mismatches":[61],"transistors":[63],"resistors.":[65],"design":[67],"implemented":[69],"65-nm":[71],"CMOS":[72],"technology":[73],"a":[75,87,93,137],"1.8-V":[76],"supply.":[77],"output":[79],"550":[83],"mV":[84],"shows":[86],"TC":[88],"0.22":[90],"ppm/\u00b0C":[91],"range":[95],"from":[96],"-20":[97],"\u00b0C":[98],"80":[100],"\u00b0C.":[101],"gain":[104],"operational":[105],"amplifier":[106],"used":[108],"that":[109],"enhances":[110],"power":[112,145],"rejection":[114],"ratio":[115],"-117.8":[117],"dB":[118,123],"at":[119,124],"DC":[120],"-75":[122],"1":[125],"kHz.":[126],"effect":[128],"mismatch":[130],"4.3%.":[132],"achieves":[136],"line":[138],"regulation":[139],"0.8":[141],"mV/V":[142],"total":[144],"consumption":[146],"20.8":[148],"\u03bcW.":[149]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}