{"id":"https://openalex.org/W2547753561","doi":"https://doi.org/10.1109/idt.2011.6123098","title":"ReverseAge: An online NBTI combating technique using time borrowing","display_name":"ReverseAge: An online NBTI combating technique using time borrowing","publication_year":2011,"publication_date":"2011-12-01","ids":{"openalex":"https://openalex.org/W2547753561","doi":"https://doi.org/10.1109/idt.2011.6123098","mag":"2547753561"},"language":"en","primary_location":{"id":"doi:10.1109/idt.2011.6123098","is_oa":false,"landing_page_url":"https://doi.org/10.1109/idt.2011.6123098","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE 6th International Design and Test Workshop (IDT)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102431092","display_name":"Seyab Khan","orcid":null},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Seyab Khan","raw_affiliation_strings":["Computer Engineering Laboratory, Delft University of Technnology, Delft, Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Computer Engineering Laboratory, Delft University of Technnology, Delft, Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005739146","display_name":"Said Hamdioui","orcid":"https://orcid.org/0000-0002-8961-0387"},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Said Hamdioui","raw_affiliation_strings":["Computer Engineering Laboratory, Delft University of Technnology, Delft, Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Computer Engineering Laboratory, Delft University of Technnology, Delft, Netherlands","institution_ids":["https://openalex.org/I98358874"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I98358874"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.32480188,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"36","last_page":"41"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.8959785103797913},{"id":"https://openalex.org/keywords/benchmark","display_name":"Benchmark (surveying)","score":0.8051450252532959},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7975666522979736},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.6049275994300842},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5188621282577515},{"id":"https://openalex.org/keywords/exploit","display_name":"Exploit","score":0.49636512994766235},{"id":"https://openalex.org/keywords/static-timing-analysis","display_name":"Static timing analysis","score":0.4683137834072113},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4620823860168457},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.4569670557975769},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4467429220676422},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4305499494075775},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2619906961917877},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24633321166038513},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.2409442663192749},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.2312837839126587},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.18287897109985352},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08600080013275146}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8959785103797913},{"id":"https://openalex.org/C185798385","wikidata":"https://www.wikidata.org/wiki/Q1161707","display_name":"Benchmark (surveying)","level":2,"score":0.8051450252532959},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7975666522979736},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.6049275994300842},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5188621282577515},{"id":"https://openalex.org/C165696696","wikidata":"https://www.wikidata.org/wiki/Q11287","display_name":"Exploit","level":2,"score":0.49636512994766235},{"id":"https://openalex.org/C93682380","wikidata":"https://www.wikidata.org/wiki/Q2025226","display_name":"Static timing analysis","level":2,"score":0.4683137834072113},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4620823860168457},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.4569670557975769},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4467429220676422},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4305499494075775},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2619906961917877},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24633321166038513},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.2409442663192749},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2312837839126587},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18287897109985352},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08600080013275146},{"id":"https://openalex.org/C205649164","wikidata":"https://www.wikidata.org/wiki/Q1071","display_name":"Geography","level":0,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C13280743","wikidata":"https://www.wikidata.org/wiki/Q131089","display_name":"Geodesy","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/idt.2011.6123098","is_oa":false,"landing_page_url":"https://doi.org/10.1109/idt.2011.6123098","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE 6th International Design and Test Workshop (IDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W1592779097","https://openalex.org/W1600691640","https://openalex.org/W1977755957","https://openalex.org/W1991891926","https://openalex.org/W2049805062","https://openalex.org/W2101686625","https://openalex.org/W2104677471","https://openalex.org/W2110283673","https://openalex.org/W2112188813","https://openalex.org/W2112414127","https://openalex.org/W2113115586","https://openalex.org/W2123489707","https://openalex.org/W2129314919","https://openalex.org/W2130990312","https://openalex.org/W2136483448","https://openalex.org/W2141565132","https://openalex.org/W2142908374","https://openalex.org/W2144702307","https://openalex.org/W2152422320","https://openalex.org/W2156064231","https://openalex.org/W2164047446","https://openalex.org/W2168429160","https://openalex.org/W2540699116","https://openalex.org/W4233474994","https://openalex.org/W4236432903","https://openalex.org/W4238042573","https://openalex.org/W6682463419","https://openalex.org/W6682867480"],"related_works":["https://openalex.org/W1970920853","https://openalex.org/W2099679924","https://openalex.org/W2738622559","https://openalex.org/W2140103399","https://openalex.org/W1977755957","https://openalex.org/W2115165828","https://openalex.org/W2126834173","https://openalex.org/W2142908374","https://openalex.org/W4233474994","https://openalex.org/W2156064231"],"abstract_inverted_index":{"As":[0],"semiconductor":[1],"manufacturing":[2],"has":[3,14,88],"entered":[4],"into":[5],"the":[6,18,56,67,69,72,80,114],"nanoscale":[7],"era,":[8],"Negative":[9],"Bias":[10],"Temperature":[11],"Instability":[12],"(NBTI)":[13],"become":[15],"one":[16],"of":[17,86,116],"most":[19],"significant":[20],"aging":[21],"mechanisms":[22],"leading":[23],"to":[24,37,44,54,65,77,108],"reliability":[25,104],"issues.":[26],"This":[27],"paper":[28],"presents":[29,51,62],"ReverseAge,":[30],"a":[31,52,63],"technique":[32,64,70],"that":[33],"detects":[34],"delay":[35],"due":[36],"NBTI":[38,57,81],"and":[39,119],"utilizes":[40],"design":[41,74],"timing":[42,75],"margins":[43,76],"ensure":[45],"reliable":[46],"circuit":[47],"operation.":[48],"First,":[49],"it":[50,61,93],"scheme":[53],"detect":[55],"induced":[58,82],"delay.":[59,83],"Second,":[60],"tolerate":[66],"errors;":[68],"exploits":[71],"available":[73],"compensate":[78],"for":[79],"The":[84,99,110],"evaluation":[85],"ReverseAge":[87],"been":[89],"performed":[90],"by":[91],"integrating":[92],"in":[94],"an":[95],"ISCAS-89":[96],"benchmark":[97],"circuit.":[98],"simulation":[100],"results":[101],"show":[102],"3\u00d7":[103],"improvements":[105],"with":[106],"respect":[107],"state-of-the-art.":[109],"improvement":[111],"comes":[112],"at":[113],"cost":[115],"3.77%":[117],"area":[118],"1.4%":[120],"power":[121],"overheads.":[122]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}