{"id":"https://openalex.org/W2750579418","doi":"https://doi.org/10.1109/icton.2017.8024836","title":"Recent advances in strained silicon devices for enabling electro-optical functionalities","display_name":"Recent advances in strained silicon devices for enabling electro-optical functionalities","publication_year":2017,"publication_date":"2017-07-01","ids":{"openalex":"https://openalex.org/W2750579418","doi":"https://doi.org/10.1109/icton.2017.8024836","mag":"2750579418"},"language":"en","primary_location":{"id":"doi:10.1109/icton.2017.8024836","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icton.2017.8024836","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 19th International Conference on Transparent Optical Networks (ICTON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013937290","display_name":"Irene Olivares","orcid":"https://orcid.org/0000-0001-8322-9123"},"institutions":[{"id":"https://openalex.org/I60053951","display_name":"Universitat Polit\u00e8cnica de Val\u00e8ncia","ror":"https://ror.org/01460j859","country_code":"ES","type":"education","lineage":["https://openalex.org/I60053951"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"Irene Olivares","raw_affiliation_strings":["Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain"],"affiliations":[{"raw_affiliation_string":"Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain","institution_ids":["https://openalex.org/I60053951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053883649","display_name":"T. Angelova","orcid":"https://orcid.org/0000-0002-8150-4133"},"institutions":[{"id":"https://openalex.org/I60053951","display_name":"Universitat Polit\u00e8cnica de Val\u00e8ncia","ror":"https://ror.org/01460j859","country_code":"ES","type":"education","lineage":["https://openalex.org/I60053951"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Todora Ivanova Angelova","raw_affiliation_strings":["Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain"],"affiliations":[{"raw_affiliation_string":"Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain","institution_ids":["https://openalex.org/I60053951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018302603","display_name":"Ana M. Gutierrez","orcid":"https://orcid.org/0000-0002-9714-6756"},"institutions":[{"id":"https://openalex.org/I60053951","display_name":"Universitat Polit\u00e8cnica de Val\u00e8ncia","ror":"https://ror.org/01460j859","country_code":"ES","type":"education","lineage":["https://openalex.org/I60053951"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Ana Maria Gutierrez","raw_affiliation_strings":["Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain"],"affiliations":[{"raw_affiliation_string":"Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain","institution_ids":["https://openalex.org/I60053951"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063425130","display_name":"Pablo Sanchis","orcid":"https://orcid.org/0000-0003-2984-4218"},"institutions":[{"id":"https://openalex.org/I60053951","display_name":"Universitat Polit\u00e8cnica de Val\u00e8ncia","ror":"https://ror.org/01460j859","country_code":"ES","type":"education","lineage":["https://openalex.org/I60053951"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Pablo Sanchis","raw_affiliation_strings":["Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain"],"affiliations":[{"raw_affiliation_string":"Universitat Polit\u00e8cnica de Val\u00e8ncia, I. U. I. Centro de Tecnolog\u00eda Nanofot\u00f3 nica, Valencia, Spain","institution_ids":["https://openalex.org/I60053951"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5013937290"],"corresponding_institution_ids":["https://openalex.org/I60053951"],"apc_list":null,"apc_paid":null,"fwci":0.292,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.60181704,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":"2017","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pockels-effect","display_name":"Pockels effect","score":0.868201494216919},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.7665854096412659},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6808997392654419},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6754907965660095},{"id":"https://openalex.org/keywords/cladding","display_name":"Cladding (metalworking)","score":0.6440069079399109},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"Silicon nitride","score":0.5887715816497803},{"id":"https://openalex.org/keywords/silicon-photonics","display_name":"Silicon photonics","score":0.582379937171936},{"id":"https://openalex.org/keywords/strained-silicon","display_name":"Strained silicon","score":0.5747185945510864},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.4161386787891388},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.3107319474220276},{"id":"https://openalex.org/keywords/crystalline-silicon","display_name":"Crystalline silicon","score":0.15503734350204468},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.096567302942276},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.06647959351539612}],"concepts":[{"id":"https://openalex.org/C186419263","wikidata":"https://www.wikidata.org/wiki/Q899456","display_name":"Pockels effect","level":3,"score":0.868201494216919},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7665854096412659},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6808997392654419},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6754907965660095},{"id":"https://openalex.org/C36456112","wikidata":"https://www.wikidata.org/wiki/Q288064","display_name":"Cladding (metalworking)","level":2,"score":0.6440069079399109},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.5887715816497803},{"id":"https://openalex.org/C119423029","wikidata":"https://www.wikidata.org/wiki/Q3749103","display_name":"Silicon photonics","level":3,"score":0.582379937171936},{"id":"https://openalex.org/C192245399","wikidata":"https://www.wikidata.org/wiki/Q772250","display_name":"Strained silicon","level":5,"score":0.5747185945510864},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4161386787891388},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.3107319474220276},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.15503734350204468},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.096567302942276},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06647959351539612},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/icton.2017.8024836","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icton.2017.8024836","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 19th International Conference on Transparent Optical Networks (ICTON)","raw_type":"proceedings-article"},{"id":"mag:3174817239","is_oa":false,"landing_page_url":"https://jglobal.jst.go.jp/en/detail?JGLOBAL_ID=201702277186720343","pdf_url":null,"source":{"id":"https://openalex.org/S4306512817","display_name":"IEEE Conference Proceedings","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":"IEEE Conference Proceedings","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.5,"display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1566509028","https://openalex.org/W1802464975","https://openalex.org/W1817361842","https://openalex.org/W1972326990","https://openalex.org/W1972395978","https://openalex.org/W1983590135","https://openalex.org/W1998543799","https://openalex.org/W2010544902","https://openalex.org/W2019883289","https://openalex.org/W2041067213","https://openalex.org/W2052065930","https://openalex.org/W2052749996","https://openalex.org/W2055490802","https://openalex.org/W2062874667","https://openalex.org/W2064316130","https://openalex.org/W2070807582","https://openalex.org/W2091353064","https://openalex.org/W2260493682","https://openalex.org/W2265801464","https://openalex.org/W2299155217","https://openalex.org/W2379615076","https://openalex.org/W2553572690","https://openalex.org/W3099754957","https://openalex.org/W3101135135","https://openalex.org/W6709576535"],"related_works":["https://openalex.org/W3010343509","https://openalex.org/W2626197217","https://openalex.org/W1993271934","https://openalex.org/W3100177614","https://openalex.org/W2985202485","https://openalex.org/W1674639095","https://openalex.org/W2765903171","https://openalex.org/W1965129139","https://openalex.org/W3173351955","https://openalex.org/W2052065930"],"abstract_inverted_index":{"More":[0],"than":[1],"ten":[2],"years":[3],"ago":[4],"it":[5,50],"was":[6],"demonstrated":[7],"that":[8,55,92],"the":[9,17,46,64,78,82,100,104],"Pockels":[10,66],"effect":[11,67],"could":[12,58,68],"be":[13],"feasible":[14],"by":[15,30],"breaking":[16],"crystal":[18],"symmetry":[19],"of":[20,32,45,99],"silicon.":[21],"Since":[22],"then,":[23],"strained":[24],"silicon":[25,39,47],"devices":[26],"have":[27,69],"been":[28,52,70],"developed":[29],"means":[31],"a":[33,60,96],"highly":[34],"stressing":[35],"cladding":[36],"layer":[37],"(typically":[38],"nitride,":[40],"SiN)":[41],"deposited":[42],"on":[43,103],"top":[44],"waveguide.":[48],"However,":[49],"has":[51],"recently":[53],"shown":[54],"carrier":[56],"effects":[57],"play":[59],"significant":[61],"role":[62],"and":[63,84],"induced":[65],"overestimated.":[71],"In":[72],"this":[73],"work,":[74],"we":[75,85],"will":[76,86],"review":[77],"recent":[79],"advances":[80],"in":[81],"field":[83],"present":[87],"our":[88],"last":[89],"results":[90],"showing":[91],"there":[93],"is":[94],"also":[95],"strong":[97],"influence":[98],"interface":[101],"traps":[102],"electro-optical":[105],"response.":[106]},"counts_by_year":[{"year":2020,"cited_by_count":2}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}