{"id":"https://openalex.org/W2048858455","doi":"https://doi.org/10.1109/icton.2014.6876638","title":"A Possibility to achieve emission in the mid-infrared wavelength range from semiconductor laser active regions","display_name":"A Possibility to achieve emission in the mid-infrared wavelength range from semiconductor laser active regions","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W2048858455","doi":"https://doi.org/10.1109/icton.2014.6876638","mag":"2048858455"},"language":"en","primary_location":{"id":"doi:10.1109/icton.2014.6876638","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icton.2014.6876638","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 16th International Conference on Transparent Optical Networks (ICTON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068641315","display_name":"\u0141ukasz Piskorski","orcid":"https://orcid.org/0000-0002-3341-6593"},"institutions":[{"id":"https://openalex.org/I188884621","display_name":"Lodz University of Technology","ror":"https://ror.org/00s8fpf52","country_code":"PL","type":"education","lineage":["https://openalex.org/I188884621"]}],"countries":["PL"],"is_corresponding":true,"raw_author_name":"Lukasz Piskorski","raw_affiliation_strings":["Photonics Group, Lodz Univ. of Technol., Lodz, Poland"],"affiliations":[{"raw_affiliation_string":"Photonics Group, Lodz Univ. of Technol., Lodz, Poland","institution_ids":["https://openalex.org/I188884621"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055665681","display_name":"Leszek Frasunkiewicz","orcid":"https://orcid.org/0000-0003-0348-4189"},"institutions":[{"id":"https://openalex.org/I188884621","display_name":"Lodz University of Technology","ror":"https://ror.org/00s8fpf52","country_code":"PL","type":"education","lineage":["https://openalex.org/I188884621"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Leszek Frasunkiewicz","raw_affiliation_strings":["Photonics Group, Lodz University of Technology, Lodz, Poland","Photonics Group, Lodz Univ. of Technol., Lodz, Poland"],"affiliations":[{"raw_affiliation_string":"Photonics Group, Lodz University of Technology, Lodz, Poland","institution_ids":["https://openalex.org/I188884621"]},{"raw_affiliation_string":"Photonics Group, Lodz Univ. of Technol., Lodz, Poland","institution_ids":["https://openalex.org/I188884621"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081425360","display_name":"Adam K. Sok\u00f3\u0142","orcid":"https://orcid.org/0000-0003-0961-372X"},"institutions":[{"id":"https://openalex.org/I188884621","display_name":"Lodz University of Technology","ror":"https://ror.org/00s8fpf52","country_code":"PL","type":"education","lineage":["https://openalex.org/I188884621"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Adam K. Sokol","raw_affiliation_strings":["Photonics Group, Lodz Univ. of Technol., Lodz, Poland"],"affiliations":[{"raw_affiliation_string":"Photonics Group, Lodz Univ. of Technol., Lodz, Poland","institution_ids":["https://openalex.org/I188884621"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024681631","display_name":"Robert P. Sarza\u0142a","orcid":"https://orcid.org/0000-0002-2929-0844"},"institutions":[{"id":"https://openalex.org/I188884621","display_name":"Lodz University of Technology","ror":"https://ror.org/00s8fpf52","country_code":"PL","type":"education","lineage":["https://openalex.org/I188884621"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"Robert P. Sarzala","raw_affiliation_strings":["Photonics Group, Lodz Univ. of Technol., Lodz, Poland"],"affiliations":[{"raw_affiliation_string":"Photonics Group, Lodz Univ. of Technol., Lodz, Poland","institution_ids":["https://openalex.org/I188884621"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5068641315"],"corresponding_institution_ids":["https://openalex.org/I188884621"],"apc_list":null,"apc_paid":null,"fwci":0.652,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.70233607,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"30","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/antimonide","display_name":"Antimonide","score":0.9454094767570496},{"id":"https://openalex.org/keywords/indium-antimonide","display_name":"Indium antimonide","score":0.894587516784668},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.7473162412643433},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7318386435508728},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7220659852027893},{"id":"https://openalex.org/keywords/indium-arsenide","display_name":"Indium arsenide","score":0.6187136173248291},{"id":"https://openalex.org/keywords/active-layer","display_name":"Active layer","score":0.6090866923332214},{"id":"https://openalex.org/keywords/laser","display_name":"Laser","score":0.5580645203590393},{"id":"https://openalex.org/keywords/quantum-well","display_name":"Quantum well","score":0.5389363169670105},{"id":"https://openalex.org/keywords/infrared","display_name":"Infrared","score":0.5356682538986206},{"id":"https://openalex.org/keywords/semiconductor-laser-theory","display_name":"Semiconductor laser theory","score":0.535264253616333},{"id":"https://openalex.org/keywords/wavelength","display_name":"Wavelength","score":0.5350426435470581},{"id":"https://openalex.org/keywords/indium-gallium-arsenide","display_name":"Indium gallium arsenide","score":0.4735150635242462},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.414294958114624},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.38538506627082825},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3361116349697113},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09418696165084839},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08548837900161743}],"concepts":[{"id":"https://openalex.org/C2778133893","wikidata":"https://www.wikidata.org/wiki/Q3243177","display_name":"Antimonide","level":2,"score":0.9454094767570496},{"id":"https://openalex.org/C2777419967","wikidata":"https://www.wikidata.org/wiki/Q418679","display_name":"Indium antimonide","level":2,"score":0.894587516784668},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.7473162412643433},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7318386435508728},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7220659852027893},{"id":"https://openalex.org/C2781300407","wikidata":"https://www.wikidata.org/wiki/Q418583","display_name":"Indium arsenide","level":3,"score":0.6187136173248291},{"id":"https://openalex.org/C2776026197","wikidata":"https://www.wikidata.org/wiki/Q201890","display_name":"Active layer","level":4,"score":0.6090866923332214},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5580645203590393},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.5389363169670105},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.5356682538986206},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.535264253616333},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.5350426435470581},{"id":"https://openalex.org/C2779769603","wikidata":"https://www.wikidata.org/wiki/Q2618059","display_name":"Indium gallium arsenide","level":3,"score":0.4735150635242462},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.414294958114624},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.38538506627082825},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3361116349697113},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09418696165084839},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08548837900161743},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icton.2014.6876638","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icton.2014.6876638","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 16th International Conference on Transparent Optical Networks (ICTON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1627408092","https://openalex.org/W1977973788","https://openalex.org/W2006271366","https://openalex.org/W2006941954","https://openalex.org/W2007954445","https://openalex.org/W2016295172","https://openalex.org/W2052299502","https://openalex.org/W2064573497","https://openalex.org/W2501531878","https://openalex.org/W2920846182"],"related_works":["https://openalex.org/W2057053511","https://openalex.org/W2077165566","https://openalex.org/W4253213826","https://openalex.org/W2959445145","https://openalex.org/W3088445082","https://openalex.org/W3011746969","https://openalex.org/W2345629763","https://openalex.org/W3022450058","https://openalex.org/W2048858455","https://openalex.org/W1988126863"],"abstract_inverted_index":{"In":[0],"the":[1,4,7,11,21,35,47,60,93],"present":[2],"paper":[3],"results":[5],"of":[6,10,59],"computer":[8],"analysis":[9],"arsenide-based":[12,52],"(GaInNAs/AlGaInAs)":[13],"and":[14,31,63,98,108],"antimonide-based":[15,80],"(GaInAsSb/AlGaAsSb)":[16],"active":[17,53,81],"regions":[18],"emitting":[19],"in":[20,66,72,96,101],"mid-infrared":[22],"wavelength":[23,74],"region":[24,54],"are":[25,38,104],"presented.":[26],"Quantum":[27],"well":[28],"material":[29],"contents":[30],"strain":[32,65,100],"dependencies":[33],"on":[34],"maximal":[36,48],"gain":[37,49,71,87],"investigated.":[39],"It":[40],"is":[41,55],"shown":[42],"that":[43],"above":[44],"3":[45],"\u03bcm":[46],"obtained":[50,78],"for":[51,79],"very":[56],"low,":[57],"irrespective":[58],"nitrogen":[61],"content":[62,95],"compressive":[64,99],"GaInNAs.":[67],"Much":[68],"higher":[69,105],"optical":[70],"this":[73,102],"range":[75],"can":[76],"be":[77],"region,":[82],"which":[83],"offers":[84],"relatively":[85],"high":[86],"even":[88],"at":[89],"5":[90],"\u03bcm,":[91],"when":[92],"indium":[94],"GaInAsSb":[97],"layer":[103],"than":[106],"80%":[107],"1.5%,":[109],"respectively.":[110]},"counts_by_year":[{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}