{"id":"https://openalex.org/W4390337146","doi":"https://doi.org/10.1109/icta60488.2023.10364332","title":"Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT","display_name":"Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT","publication_year":2023,"publication_date":"2023-10-27","ids":{"openalex":"https://openalex.org/W4390337146","doi":"https://doi.org/10.1109/icta60488.2023.10364332"},"language":"en","primary_location":{"id":"doi:10.1109/icta60488.2023.10364332","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta60488.2023.10364332","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101693216","display_name":"Weihao Lu","orcid":"https://orcid.org/0009-0002-8135-4865"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":true,"raw_author_name":"Weihao Lu","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100359847","display_name":"Sheng Li","orcid":"https://orcid.org/0000-0003-4729-9460"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Sheng Li","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100629071","display_name":"Siyang Liu","orcid":"https://orcid.org/0000-0001-6498-9901"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Siyang Liu","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060116249","display_name":"Yanfeng Ma","orcid":"https://orcid.org/0000-0002-0134-496X"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Yanfeng Ma","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100363552","display_name":"Long Zhang","orcid":"https://orcid.org/0000-0003-0254-6085"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Long Zhang","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043271824","display_name":"Jiaxing Wei","orcid":"https://orcid.org/0000-0002-9896-3360"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Jiaxing Wei","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100764839","display_name":"Weifeng Sun","orcid":"https://orcid.org/0000-0002-3289-8877"},"institutions":[{"id":"https://openalex.org/I4210090971","display_name":"Southeast University","ror":"https://ror.org/00cf0ab87","country_code":"BD","type":"education","lineage":["https://openalex.org/I4210090971"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Weifeng Sun","raw_affiliation_strings":["Southeast University,National ASIC System Engineering Research Center","National ASIC System Engineering Research Center, Southeast University"],"affiliations":[{"raw_affiliation_string":"Southeast University,National ASIC System Engineering Research Center","institution_ids":["https://openalex.org/I4210090971"]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University","institution_ids":["https://openalex.org/I4210090971"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021190064","display_name":"Yiheng Li","orcid":"https://orcid.org/0000-0003-0135-8824"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yiheng Li","raw_affiliation_strings":["CorEnergy Semiconductor Technology Co. Ltd"],"affiliations":[{"raw_affiliation_string":"CorEnergy Semiconductor Technology Co. Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102747790","display_name":"Yuanyang Xia","orcid":"https://orcid.org/0000-0001-8417-4988"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuanyang Xia","raw_affiliation_strings":["CorEnergy Semiconductor Technology Co. Ltd"],"affiliations":[{"raw_affiliation_string":"CorEnergy Semiconductor Technology Co. Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024060040","display_name":"Ke Wang","orcid":"https://orcid.org/0000-0002-7237-3856"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ke Wang","raw_affiliation_strings":["CorEnergy Semiconductor Technology Co. Ltd"],"affiliations":[{"raw_affiliation_string":"CorEnergy Semiconductor Technology Co. Ltd","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5018107626","display_name":"Tinggang Zhu","orcid":"https://orcid.org/0009-0006-6673-5394"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tinggang Zhu","raw_affiliation_strings":["CorEnergy Semiconductor Technology Co. Ltd"],"affiliations":[{"raw_affiliation_string":"CorEnergy Semiconductor Technology Co. Ltd","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5101693216"],"corresponding_institution_ids":["https://openalex.org/I4210090971"],"apc_list":null,"apc_paid":null,"fwci":0.384,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.59523654,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"13","last_page":"14"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8675222992897034},{"id":"https://openalex.org/keywords/sapphire","display_name":"Sapphire","score":0.8554843664169312},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8059512376785278},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7519367933273315},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5997179746627808},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5238364338874817},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4977100193500519},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.4921974241733551},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4672890305519104},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4394713044166565},{"id":"https://openalex.org/keywords/silicon-on-sapphire","display_name":"Silicon on sapphire","score":0.4355798363685608},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33590418100357056},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3087230324745178},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.30375540256500244},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.16602551937103271},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12057271599769592},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.09642639756202698},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07385897636413574},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.0698193907737732}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8675222992897034},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.8554843664169312},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8059512376785278},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7519367933273315},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5997179746627808},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5238364338874817},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4977100193500519},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4921974241733551},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4672890305519104},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4394713044166565},{"id":"https://openalex.org/C172905872","wikidata":"https://www.wikidata.org/wiki/Q1622339","display_name":"Silicon on sapphire","level":4,"score":0.4355798363685608},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33590418100357056},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3087230324745178},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30375540256500244},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.16602551937103271},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12057271599769592},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.09642639756202698},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07385897636413574},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0698193907737732},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta60488.2023.10364332","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta60488.2023.10364332","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G688075797","display_name":null,"funder_award_id":"2022TQ0061,2022M720710","funder_id":"https://openalex.org/F4320321543","funder_display_name":"China Postdoctoral Science Foundation"},{"id":"https://openalex.org/G7461655564","display_name":null,"funder_award_id":"62204034,62174029","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321543","display_name":"China Postdoctoral Science Foundation","ror":"https://ror.org/0426zh255"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2588456444","https://openalex.org/W2785332394","https://openalex.org/W2910525979","https://openalex.org/W2969984515","https://openalex.org/W4214876635"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W2250343992","https://openalex.org/W3209950509","https://openalex.org/W3043337507","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W4220740305","https://openalex.org/W1905863001","https://openalex.org/W2466508933"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,25,30,43],"dynamic":[4],"drain":[5],"to":[6],"source":[7],"on-state":[8,51],"resistance":[9,52],"behaviors":[10],"of":[11,28,50],"a":[12,47,61],"1.9kV":[13],"GaN-on-Sapphire":[14,44],"HEMT":[15],"are":[16],"investigated":[17],"in":[18],"details":[19],"under":[20],"various":[21],"conditions.":[22],"Benefiting":[23],"from":[24],"insulation":[26],"feature":[27],"substrate,":[29],"GaN":[31],"HEMTs":[32],"fabricated":[33],"on":[34],"Sapphire":[35],"possess":[36],"ultrahigh":[37],"breakdown":[38],"voltage":[39],"beyond":[40],"1.9kV.":[41],"Meanwhile,":[42],"device":[45],"exhibits":[46],"lower":[48],"rate":[49],"degradation":[53],"at":[54],"both":[55],"25\u00b0C":[56],"and":[57],"225\u00b0C,":[58],"compared":[59],"with":[60],"GaN-on-Silicon":[62],"device.":[63]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}