{"id":"https://openalex.org/W4310614831","doi":"https://doi.org/10.1109/icta56932.2022.9963089","title":"Two-bit multi-level spin orbit torque MRAM with the fully one-step write operation","display_name":"Two-bit multi-level spin orbit torque MRAM with the fully one-step write operation","publication_year":2022,"publication_date":"2022-10-28","ids":{"openalex":"https://openalex.org/W4310614831","doi":"https://doi.org/10.1109/icta56932.2022.9963089"},"language":"en","primary_location":{"id":"doi:10.1109/icta56932.2022.9963089","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9963089","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101638272","display_name":"Chenyi Wang","orcid":"https://orcid.org/0009-0009-6240-7141"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Chenyi Wang","raw_affiliation_strings":["Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100340976","display_name":"Min Wang","orcid":"https://orcid.org/0000-0003-2655-9833"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Min Wang","raw_affiliation_strings":["Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056897117","display_name":"Zhaohao Wang","orcid":"https://orcid.org/0000-0002-2999-7903"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhaohao Wang","raw_affiliation_strings":["Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066473925","display_name":"Weisheng Zhao","orcid":"https://orcid.org/0000-0001-8088-0404"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weisheng Zhao","raw_affiliation_strings":["Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191"],"affiliations":[{"raw_affiliation_string":"Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University,MIIT Key Laboratory of Spintronics,Beijing,China,100191","institution_ids":["https://openalex.org/I82880672"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5101638272"],"corresponding_institution_ids":["https://openalex.org/I82880672"],"apc_list":null,"apc_paid":null,"fwci":3.2639,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.92764033,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"142","last_page":"143"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.9554786682128906},{"id":"https://openalex.org/keywords/torque","display_name":"Torque","score":0.586754322052002},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.5358582139015198},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5315805673599243},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3981918394565582},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.2999229431152344},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.26958709955215454},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.25080186128616333},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.2387172281742096},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18790769577026367}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.9554786682128906},{"id":"https://openalex.org/C144171764","wikidata":"https://www.wikidata.org/wiki/Q48103","display_name":"Torque","level":2,"score":0.586754322052002},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.5358582139015198},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5315805673599243},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3981918394565582},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.2999229431152344},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.26958709955215454},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.25080186128616333},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.2387172281742096},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18790769577026367},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta56932.2022.9963089","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9963089","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7400000095367432,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G7223662830","display_name":null,"funder_award_id":"62171013","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2048803031","https://openalex.org/W2163283381","https://openalex.org/W3067010295","https://openalex.org/W3136472793","https://openalex.org/W3172819050","https://openalex.org/W3193853696"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W3146164987","https://openalex.org/W2086829516","https://openalex.org/W2141626281","https://openalex.org/W2472395098","https://openalex.org/W2128922810","https://openalex.org/W1641143370","https://openalex.org/W1908441109","https://openalex.org/W1579280934"],"abstract_inverted_index":{"As":[0],"an":[1],"emerging":[2],"non-volatile":[3],"memory":[4,13],"technology,":[5],"the":[6,26,31,37,65,78,81,90,93,100,113,117,121,130,136,146],"spin":[7],"orbit":[8],"torque":[9],"magnetic":[10,54],"random":[11],"access":[12],"(SOT-MRAM)":[14],"has":[15,33,142],"attracted":[16],"intensive":[17],"research":[18],"interest":[19],"due":[20],"to":[21,88],"its":[22],"advanced":[23],"performance.":[24],"However,":[25],"binary":[27],"storage":[28],"feature":[29],"of":[30,36,46,61,68,80,92,102],"SOT-MRAM":[32,49],"become":[34],"one":[35],"obstacles.":[38],"In":[39,134],"this":[40],"paper,":[41],"we":[42],"present":[43],"a":[44,59],"study":[45],"two-bit":[47],"multi-level":[48,69,95],"where":[50],"two":[51,140],"canted":[52],"in-plane-anisotropy":[53],"tunnel":[55],"junctions":[56],"(MTJs)":[57],"store":[58],"pair":[60],"data.":[62],"Compared":[63],"with":[64,129],"previous":[66],"schemes":[67],"SOT-MRAMs,":[70],"our":[71],"proposal":[72],"enables":[73],"fully":[74],"one-step":[75],"writing":[76],"without":[77],"need":[79],"preset":[82],"operation.":[83],"Micromagnetic":[84],"simulation":[85],"is":[86],"performed":[87],"validate":[89],"functionality":[91],"proposed":[94],"cell":[96],"(MLC)":[97],"SOT-MRAM,":[98],"meanwhile,":[99],"details":[101],"magnetization":[103,118],"switching":[104,119,147],"are":[105],"clearly":[106],"shown.":[107],"Simulation":[108],"results":[109],"also":[110],"demonstrate":[111],"that":[112],"device":[114],"could":[115],"accomplish":[116],"at":[120],"sub-nanosecond":[122],"speed":[123],"and":[124],"continuously":[125],"decreasing":[126],"power":[127],"consumption":[128],"size":[131],"scaling":[132],"down.":[133],"addition,":[135],"dipolar":[137],"field":[138],"between":[139],"cells":[141],"little":[143],"influence":[144],"on":[145],"process.":[148]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}