{"id":"https://openalex.org/W4310614709","doi":"https://doi.org/10.1109/icta56932.2022.9962999","title":"First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications","display_name":"First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications","publication_year":2022,"publication_date":"2022-10-28","ids":{"openalex":"https://openalex.org/W4310614709","doi":"https://doi.org/10.1109/icta56932.2022.9962999"},"language":"en","primary_location":{"id":"doi:10.1109/icta56932.2022.9962999","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9962999","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089833647","display_name":"Hao Lu","orcid":"https://orcid.org/0000-0002-3189-7864"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hao Lu","raw_affiliation_strings":["School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032724406","display_name":"Likun Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Likun Zhou","raw_affiliation_strings":["School of Advanced Materials and Nanotechnology, Xidian University,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Advanced Materials and Nanotechnology, Xidian University,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082221909","display_name":"Longge Deng","orcid":"https://orcid.org/0000-0002-4932-4773"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Longge Deng","raw_affiliation_strings":["School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068129840","display_name":"Ling Yang","orcid":"https://orcid.org/0000-0001-7284-8180"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ling Yang","raw_affiliation_strings":["School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015884736","display_name":"Bin Hou","orcid":"https://orcid.org/0000-0002-5368-3699"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bin Hou","raw_affiliation_strings":["School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100321027","display_name":"Xiaohua Ma","orcid":"https://orcid.org/0000-0002-1331-6253"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaohua Ma","raw_affiliation_strings":["School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100750974","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0002-8081-2919"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5089833647"],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":null,"apc_paid":null,"fwci":0.3638,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.48148148,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"30","last_page":"31"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8526090979576111},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.6258383393287659},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5791767835617065},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5300315022468567},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.49581775069236755},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4369077980518341},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3464791178703308},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3434341847896576},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.322170615196228},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19952404499053955},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.16756170988082886},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11399456858634949},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0579068660736084}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8526090979576111},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.6258383393287659},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5791767835617065},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5300315022468567},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.49581775069236755},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4369077980518341},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3464791178703308},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3434341847896576},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.322170615196228},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19952404499053955},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.16756170988082886},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11399456858634949},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0579068660736084},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta56932.2022.9962999","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9962999","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5699999928474426,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1977241145","https://openalex.org/W2111795186","https://openalex.org/W2132295068","https://openalex.org/W2911503898","https://openalex.org/W3171587141","https://openalex.org/W3204922301","https://openalex.org/W4205723616","https://openalex.org/W4224820466"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W4390729576","https://openalex.org/W2532810475","https://openalex.org/W2171730916","https://openalex.org/W1986136028","https://openalex.org/W2162684047","https://openalex.org/W1943995216","https://openalex.org/W2098291540","https://openalex.org/W1992369447","https://openalex.org/W2598293455"],"abstract_inverted_index":{"The":[0,69],"conventional":[1],"GaN":[2],"channel":[3,10,19,24,47,60,72,137,161],"HEMT":[4,26],"will":[5],"suffer":[6],"the":[7,22,38,42,45,58,66,131,135,143,150,159,167],"significant":[8],"short":[9],"effect":[11],"and":[12,93,111],"high-temperature":[13],"degradation":[14],"due":[15,36],"to":[16,31,37],"its":[17],"weak":[18],"confinement.":[20],"Although":[21],"InGaN":[23,46,59,71,136,153,160],"double-heterostructure":[25],"(DH-HEMT)":[27],"has":[28,62],"been":[29,63],"reported":[30,64],"address":[32],"this":[33,51],"issue":[34],"well":[35],"strong":[39],"quantum":[40],"confinement,":[41],"efficiency":[43,106],"of":[44,57,78,91,108,118],"lacks":[48],"investigation.":[49],"In":[50],"work,":[52],"a":[53,75,81,103],"high":[54,82,104,140],"PAE":[55,141],"performance":[56],"heterostructure":[61],"for":[65,134],"first":[67,132],"time.":[68],"fabricated":[70],"device":[73],"with":[74,162],"gate":[76],"length":[77],"200-nm":[79],"achieved":[80,138],"f":[83],"<inf":[84,88,123],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[85,89,124],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</inf>":[86],"/f":[87],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">max</inf>":[90],"36.7":[92],"97":[94],"GHz,":[95],"respectively.":[96],"3.6":[97],"GHz":[98],"continuous-wave":[99],"load-pull":[100],"measurements":[101],"gain":[102],"power-added":[105],"(PAE)":[107],"59.4":[109],"%,":[110],"an":[112],"associated":[113],"output":[114],"power":[115],"density":[116],"(Pout)":[117],"2.14":[119],"W/mm":[120],"at":[121],"V":[122],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DS</inf>":[125],"=":[126],"20":[127],"V.":[128],"It":[129],"is":[130],"time":[133],"so":[139],"performance,":[142],"results":[144],"presented":[145],"here":[146],"are":[147],"benchmarked":[148],"against":[149],"state-of-the-art":[151],"(SOA)":[152],"channel.":[154],"This":[155],"work":[156],"illustrated":[157],"that":[158],"reasonable":[163],"design":[164],"can":[165],"boost":[166],"5G":[168],"base-station":[169],"applications.":[170]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}