{"id":"https://openalex.org/W4310614806","doi":"https://doi.org/10.1109/icta56932.2022.9962988","title":"A High-Density Large-Ratio Fuse Based Oxide Devices for One-time-programmable Memory Applications","display_name":"A High-Density Large-Ratio Fuse Based Oxide Devices for One-time-programmable Memory Applications","publication_year":2022,"publication_date":"2022-10-28","ids":{"openalex":"https://openalex.org/W4310614806","doi":"https://doi.org/10.1109/icta56932.2022.9962988"},"language":"en","primary_location":{"id":"doi:10.1109/icta56932.2022.9962988","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9962988","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058825509","display_name":"Xuecheng Cui","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Xuecheng Cui","raw_affiliation_strings":["School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090320758","display_name":"Dong Liu","orcid":"https://orcid.org/0000-0001-6990-2473"},"institutions":[{"id":"https://openalex.org/I4210132079","display_name":"Hangzhou Wanxiang Polytechnic","ror":"https://ror.org/03sxnxp24","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210132079"]},{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dong Liu","raw_affiliation_strings":["Polytechnic Institute, Zhejiang University,Hangzhou,China,310015"],"affiliations":[{"raw_affiliation_string":"Polytechnic Institute, Zhejiang University,Hangzhou,China,310015","institution_ids":["https://openalex.org/I4210132079","https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043111184","display_name":"Jifang Cao","orcid":"https://orcid.org/0009-0005-1543-5001"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jifang Cao","raw_affiliation_strings":["School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003619700","display_name":"Xiao Yu","orcid":"https://orcid.org/0000-0001-8769-521X"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiao Yu","raw_affiliation_strings":["Research Center for Intelligent Chips and Devices, ZHEJIANG LAB,Hangzhou,China,311121"],"affiliations":[{"raw_affiliation_string":"Research Center for Intelligent Chips and Devices, ZHEJIANG LAB,Hangzhou,China,311121","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100443083","display_name":"Bing Chen","orcid":"https://orcid.org/0000-0001-5284-8618"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bing Chen","raw_affiliation_strings":["School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000","Research Center for Intelligent Chips and Devices, ZHEJIANG LAB, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000","institution_ids":[]},{"raw_affiliation_string":"Research Center for Intelligent Chips and Devices, ZHEJIANG LAB, Hangzhou, China","institution_ids":["https://openalex.org/I4210123185"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5058825509"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3222,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.44290159,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"76","last_page":"77"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-blocking-i/o","display_name":"Non-blocking I/O","score":0.7520409822463989},{"id":"https://openalex.org/keywords/fuse","display_name":"Fuse (electrical)","score":0.7389070391654968},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.6015631556510925},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.507314145565033},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45132485032081604},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35968631505966187},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.30624920129776},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.20509105920791626},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1818515658378601},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18112215399742126},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.07487750053405762}],"concepts":[{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.7520409822463989},{"id":"https://openalex.org/C141353440","wikidata":"https://www.wikidata.org/wiki/Q182221","display_name":"Fuse (electrical)","level":2,"score":0.7389070391654968},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6015631556510925},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.507314145565033},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45132485032081604},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35968631505966187},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.30624920129776},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20509105920791626},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1818515658378601},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18112215399742126},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.07487750053405762},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta56932.2022.9962988","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta56932.2022.9962988","pdf_url":null,"source":{"id":"https://openalex.org/S4363608577","display_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1576039828","display_name":null,"funder_award_id":"62174146","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1547338042","https://openalex.org/W2114592904","https://openalex.org/W2292120221","https://openalex.org/W2839603256","https://openalex.org/W3138136357"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W3143498405","https://openalex.org/W3000097931","https://openalex.org/W2354322770","https://openalex.org/W2932574265","https://openalex.org/W4237547500","https://openalex.org/W4400697520","https://openalex.org/W2066006833","https://openalex.org/W4389945967","https://openalex.org/W2056430455"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,36,45,49,63,87],"oxide":[4],"fused":[5,26],"and":[6,25,74],"anti-fused":[7,23],"behavior":[8],"has":[9],"been":[10],"observed":[11],"in":[12,86],"a":[13,75],"simple":[14,76],"metal-oxide-metal":[15],"device:":[16],"Pt/HfO2/NiO":[17],"<inf":[18],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[19,56],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</inf>":[20],"/Ni.":[21],"The":[22],"state":[24,27],"can":[28,60,82],"be":[29,83],"achieved":[30],"by":[31],"applying":[32],"program":[33],"voltage":[34],"on":[35],"devices":[37],"with":[38],"or":[39],"without":[40],"current":[41],"compliance,":[42],"respectively.":[43],"And":[44],"resistance":[46],"window":[47],"of":[48,65,89,92],"two":[50],"states":[51],"reaches":[52],"about":[53],"10":[54],"<sup":[55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">9</sup>":[57],",":[58],"which":[59],"effectively":[61],"reduce":[62],"possibility":[64],"incorrect":[66],"programming.":[67],"It":[68,81],"also":[69],"showed":[70],"excellent":[71],"retention":[72],"characteristics":[73],"structure":[77],"friendly":[78],"for":[79],"integration.":[80],"well":[84],"used":[85],"field":[88],"high":[90],"reliability":[91],"one-time":[93],"programmable":[94],"memory.":[95]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}