{"id":"https://openalex.org/W4205417836","doi":"https://doi.org/10.1109/icta53157.2021.9661958","title":"The Effect of High Temperature Ion Implantation on the Performance of 1.2kV 4H-SiC MOSFETs","display_name":"The Effect of High Temperature Ion Implantation on the Performance of 1.2kV 4H-SiC MOSFETs","publication_year":2021,"publication_date":"2021-11-24","ids":{"openalex":"https://openalex.org/W4205417836","doi":"https://doi.org/10.1109/icta53157.2021.9661958"},"language":"en","primary_location":{"id":"doi:10.1109/icta53157.2021.9661958","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta53157.2021.9661958","pdf_url":null,"source":{"id":"https://openalex.org/S4363608320","display_name":"2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5115594348","display_name":"Hao Liu","orcid":"https://orcid.org/0000-0002-9071-6859"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hao Liu","raw_affiliation_strings":["NARI-GEIRI Semiconductor co., Ltd, Nanjing, China","National ASIC System Engineering Research Center, Southeast University, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"NARI-GEIRI Semiconductor co., Ltd, Nanjing, China","institution_ids":[]},{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100730433","display_name":"Liang Tian","orcid":"https://orcid.org/0000-0003-1371-8444"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Liang Tian","raw_affiliation_strings":["NARI-GEIRI Semiconductor co., Ltd, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"NARI-GEIRI Semiconductor co., Ltd, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026899405","display_name":"KaiBing Qiu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"KaiBing Qiu","raw_affiliation_strings":["NARI-GEIRI Semiconductor co., Ltd, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"NARI-GEIRI Semiconductor co., Ltd, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106406907","display_name":"Jun Shi","orcid":"https://orcid.org/0000-0002-5572-0350"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jun Shi","raw_affiliation_strings":["NARI-GEIRI Semiconductor co., Ltd, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"NARI-GEIRI Semiconductor co., Ltd, Nanjing, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101050225","display_name":"Longxin Shi","orcid":null},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"LongXin Shi","raw_affiliation_strings":["National ASIC System Engineering Research Center, Southeast University, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Research Center, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5115594348"],"corresponding_institution_ids":["https://openalex.org/I76569877"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.2185716,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"20","last_page":"21"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9941999912261963,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8079944252967834},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"Ion implantation","score":0.7551049590110779},{"id":"https://openalex.org/keywords/ohmic-contact","display_name":"Ohmic contact","score":0.7347270250320435},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.644169807434082},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6091105341911316},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.1918947994709015},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.16031450033187866},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.04694098234176636}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8079944252967834},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.7551049590110779},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.7347270250320435},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.644169807434082},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6091105341911316},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1918947994709015},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16031450033187866},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.04694098234176636},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta53157.2021.9661958","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta53157.2021.9661958","pdf_url":null,"source":{"id":"https://openalex.org/S4363608320","display_name":"2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6600000262260437}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W602732352","https://openalex.org/W1994223615","https://openalex.org/W2613100900"],"related_works":["https://openalex.org/W2038727579","https://openalex.org/W4200112421","https://openalex.org/W2169607299","https://openalex.org/W2372280005","https://openalex.org/W2067470011","https://openalex.org/W2028653720","https://openalex.org/W4363675227","https://openalex.org/W2078115537","https://openalex.org/W2051723358","https://openalex.org/W2101231590"],"abstract_inverted_index":{"The":[0,16,57],"impact":[1],"of":[2,11,18,31,46,77,89],"high":[3,20,42,67,95],"temperature":[4,21,43,68,96],"ion":[5,22,44,69,97],"implantation":[6,23,45],"on":[7],"the":[8,53,75,87],"electrical":[9,60],"performances":[10],"4H-SiC":[12],"MOSFETs":[13,91],"is":[14,38,83],"investigated.":[15],"effect":[17],"single-step":[19],"in":[24,59],"P-well,":[25],"N+,":[26],"P+":[27,49],"regions":[28],"and":[29,79],"that":[30,40,65],"three-step":[32,66,94],"implantations":[33,70],"are":[34,62],"compared":[35],"firstly.":[36],"It":[37],"found":[39],"neither":[41],"N+":[47],"nor":[48],"can":[50],"obviously":[51],"improve":[52,86],"ohmic":[54],"contact":[55],"characteristics.":[56],"variations":[58],"parameters":[61],"analyzed,":[63],"showing":[64],"have":[71],"made":[72],"contribution":[73],"to":[74,85],"improvements":[76],"Vth":[78],"RDSON.":[80],"Therefore,":[81],"it":[82],"significant":[84],"performance":[88],"SiC":[90],"by":[92],"using":[93],"implantations.":[98]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}