{"id":"https://openalex.org/W3128201769","doi":"https://doi.org/10.1109/icta50426.2020.9332104","title":"A TCAD-based Study of NDR Effect in NC-FinFET","display_name":"A TCAD-based Study of NDR Effect in NC-FinFET","publication_year":2020,"publication_date":"2020-11-23","ids":{"openalex":"https://openalex.org/W3128201769","doi":"https://doi.org/10.1109/icta50426.2020.9332104","mag":"3128201769"},"language":"en","primary_location":{"id":"doi:10.1109/icta50426.2020.9332104","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta50426.2020.9332104","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047933404","display_name":"Hao Yu","orcid":"https://orcid.org/0000-0002-2739-7736"},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hao Yu","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029842758","display_name":"Chengxu Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chengxu Wang","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100607861","display_name":"Xiangshui Miao","orcid":"https://orcid.org/0000-0002-5621-5495"},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]},{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiangshui Miao","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]},{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068351845","display_name":"Xingsheng Wang","orcid":"https://orcid.org/0000-0001-8335-2033"},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]},{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingsheng Wang","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]},{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5047933404"],"corresponding_institution_ids":["https://openalex.org/I47720641"],"apc_list":null,"apc_paid":null,"fwci":0.1027,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.46270251,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"102","last_page":"103"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7579941749572754},{"id":"https://openalex.org/keywords/inverse","display_name":"Inverse","score":0.6281387805938721},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.620621383190155},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5833929777145386},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"Drain-induced barrier lowering","score":0.563046932220459},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5190882682800293},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4909132122993469},{"id":"https://openalex.org/keywords/differential","display_name":"Differential (mechanical device)","score":0.4168824255466461},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.39970090985298157},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3756738305091858},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3548576235771179},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31697186827659607},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21520206332206726},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17900732159614563},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.12435927987098694},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.12250781059265137},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10438618063926697},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07502415776252747},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.06242021918296814}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7579941749572754},{"id":"https://openalex.org/C207467116","wikidata":"https://www.wikidata.org/wiki/Q4385666","display_name":"Inverse","level":2,"score":0.6281387805938721},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.620621383190155},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5833929777145386},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.563046932220459},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5190882682800293},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4909132122993469},{"id":"https://openalex.org/C93226319","wikidata":"https://www.wikidata.org/wiki/Q193137","display_name":"Differential (mechanical device)","level":2,"score":0.4168824255466461},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.39970090985298157},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3756738305091858},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3548576235771179},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31697186827659607},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21520206332206726},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17900732159614563},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.12435927987098694},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12250781059265137},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10438618063926697},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07502415776252747},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.06242021918296814},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icta50426.2020.9332104","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icta50426.2020.9332104","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5699999928474426}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2016106189","https://openalex.org/W2795401355","https://openalex.org/W3023747395"],"related_works":["https://openalex.org/W2347585086","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W1966596465","https://openalex.org/W2018850574","https://openalex.org/W3086500945","https://openalex.org/W2781651239","https://openalex.org/W2368367884","https://openalex.org/W1981643698","https://openalex.org/W2077205329"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,58],"cause":[4],"of":[5],"inverse":[6,29],"drain":[7],"induced":[8],"barrier":[9],"lowering":[10],"effect":[11,16],"in":[12],"negative":[13,32],"capacitance":[14,23],"field":[15],"transistors":[17],"(NCFETs)":[18],"is":[19,25,66],"discussed,":[20],"and":[21,38,51],"a":[22],"model":[24],"given.":[26],"Based":[27],"on":[28],"DIBL":[30],"effect,":[31],"differential":[33],"resistance":[34],"phenomenon":[35],"could":[36],"occur,":[37],"these":[39],"two":[40],"effects":[41],"are":[42],"hard":[43],"to":[44],"be":[45,55],"removed.":[46],"Since":[47],"higher":[48],"on-off":[49],"ratio":[50],"lower":[52],"NDR":[53],"cannot":[54],"achieved":[56],"at":[57],"same":[59],"condition,":[60],"their":[61],"relationship":[62],"with":[63],"device":[64],"structure":[65],"also":[67],"studied.":[68]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}