{"id":"https://openalex.org/W2782331397","doi":"https://doi.org/10.1109/icsens.2017.8233933","title":"Fabrication of electrostatically actuated silicon nitride microshutter arrays","display_name":"Fabrication of electrostatically actuated silicon nitride microshutter arrays","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2782331397","doi":"https://doi.org/10.1109/icsens.2017.8233933","mag":"2782331397"},"language":"en","primary_location":{"id":"doi:10.1109/icsens.2017.8233933","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsens.2017.8233933","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE SENSORS","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028469813","display_name":"Lance Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I4210112445","display_name":"Stinger Ghaffarian Technologies (United States)","ror":"https://ror.org/02133fc38","country_code":"US","type":"company","lineage":["https://openalex.org/I4210112445"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"L. Oh","raw_affiliation_strings":["SGT Inc"],"affiliations":[{"raw_affiliation_string":"SGT Inc","institution_ids":["https://openalex.org/I4210112445"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006398267","display_name":"M. Li","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Li","raw_affiliation_strings":["NASA, Washington, DC, US"],"affiliations":[{"raw_affiliation_string":"NASA, Washington, DC, US","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045442178","display_name":"Kyowon Kim","orcid":"https://orcid.org/0000-0002-6652-868X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Kim","raw_affiliation_strings":["ASRC Federal Corp"],"affiliations":[{"raw_affiliation_string":"ASRC Federal Corp","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028299159","display_name":"Daniel P. Kelly","orcid":"https://orcid.org/0000-0002-3811-9491"},"institutions":[{"id":"https://openalex.org/I1306266525","display_name":"Goddard Space Flight Center","ror":"https://ror.org/0171mag52","country_code":"US","type":"facility","lineage":["https://openalex.org/I1306266525","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Kelly","raw_affiliation_strings":["NASA/Goddard Space Flight Center"],"affiliations":[{"raw_affiliation_string":"NASA/Goddard Space Flight Center","institution_ids":["https://openalex.org/I1306266525"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066446964","display_name":"A. Kutyrev","orcid":"https://orcid.org/0000-0002-2715-8460"},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Kutyrev","raw_affiliation_strings":["University of Maryland, Maryland, USA"],"affiliations":[{"raw_affiliation_string":"University of Maryland, Maryland, USA","institution_ids":["https://openalex.org/I66946132"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109484994","display_name":"S. H. Moseley","orcid":null},"institutions":[{"id":"https://openalex.org/I1306266525","display_name":"Goddard Space Flight Center","ror":"https://ror.org/0171mag52","country_code":"US","type":"facility","lineage":["https://openalex.org/I1306266525","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Moseley","raw_affiliation_strings":["NASA/Goddard Space Flight Center"],"affiliations":[{"raw_affiliation_string":"NASA/Goddard Space Flight Center","institution_ids":["https://openalex.org/I1306266525"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5028469813"],"corresponding_institution_ids":["https://openalex.org/I4210112445"],"apc_list":null,"apc_paid":null,"fwci":0.1433,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53945592,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"pp","issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12449","display_name":"Spacecraft Design and Technology","score":0.9884999990463257,"subfield":{"id":"https://openalex.org/subfields/2202","display_name":"Aerospace Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9782999753952026,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.7804253101348877},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7094463109970093},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"Silicon nitride","score":0.6891485452651978},{"id":"https://openalex.org/keywords/stiction","display_name":"Stiction","score":0.6662747859954834},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.6595079302787781},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.635180652141571},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.5925489664077759},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.557147741317749},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.5315845608711243},{"id":"https://openalex.org/keywords/silicon-oxide","display_name":"Silicon oxide","score":0.5202694535255432},{"id":"https://openalex.org/keywords/monolayer","display_name":"Monolayer","score":0.47554370760917664},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.43240416049957275},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.420604944229126},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.4119674861431122},{"id":"https://openalex.org/keywords/microelectromechanical-systems","display_name":"Microelectromechanical systems","score":0.41194185614585876},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.37367427349090576},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3075651526451111},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08874869346618652},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08503112196922302},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06939452886581421}],"concepts":[{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.7804253101348877},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7094463109970093},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.6891485452651978},{"id":"https://openalex.org/C110339231","wikidata":"https://www.wikidata.org/wiki/Q2143425","display_name":"Stiction","level":3,"score":0.6662747859954834},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.6595079302787781},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.635180652141571},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.5925489664077759},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.557147741317749},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.5315845608711243},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.5202694535255432},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.47554370760917664},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.43240416049957275},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.420604944229126},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4119674861431122},{"id":"https://openalex.org/C37977207","wikidata":"https://www.wikidata.org/wiki/Q175561","display_name":"Microelectromechanical systems","level":2,"score":0.41194185614585876},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.37367427349090576},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3075651526451111},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08874869346618652},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08503112196922302},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06939452886581421},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icsens.2017.8233933","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsens.2017.8233933","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE SENSORS","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1969114105","https://openalex.org/W2018774787","https://openalex.org/W2056447596","https://openalex.org/W2165167966","https://openalex.org/W6655297590","https://openalex.org/W6684209200"],"related_works":["https://openalex.org/W2344555939","https://openalex.org/W2625047220","https://openalex.org/W1969392085","https://openalex.org/W2134058937","https://openalex.org/W2148850047","https://openalex.org/W1982639362","https://openalex.org/W2035261584","https://openalex.org/W2065405606","https://openalex.org/W2905415742","https://openalex.org/W2001228859"],"abstract_inverted_index":{"We":[0],"have":[1],"developed":[2],"a":[3],"new":[4],"back":[5,58,79],"side":[6,80],"fabrication":[7],"process":[8],"to":[9,74,113],"actuate":[10],"microshutter":[11],"arrays":[12],"(MSA)":[13],"electrostatically":[14,48],"at":[15],"the":[16,53,55,61,78,83,99],"NASA":[17],"Goddard":[18],"Space":[19],"Flight":[20],"Center.":[21],"The":[22,33,40,63,90],"microshutters":[23,34,42,100],"are":[24,43,101],"fabricated":[25],"on":[26,37,52,77],"silicon":[27,30],"with":[28],"thin":[29],"nitride":[31],"membranes.":[32],"rotate":[35],"90\u00b0":[36],"torsion":[38],"bars.":[39],"selected":[41],"actuated,":[44],"held,":[45],"and":[46,57,97],"addressed":[47],"by":[49],"applying":[50],"voltages":[51],"electrodes":[54,76],"front":[56],"sides":[59],"of":[60,68,81,108],"microshutters.":[62],"atomic":[64],"layer":[65],"deposition":[66],"(ALD)":[67],"aluminum":[69,92],"oxide":[70,93],"(AhO3)":[71],"was":[72,111],"used":[73],"insulate":[75],"walls;":[82],"insulation":[84],"can":[85],"withstand":[86],"over":[87],"100":[88],"V.":[89],"ALD":[91],"is":[94],"dry":[95],"etched,":[96],"then":[98],"released":[102],"in":[103],"vapor":[104],"HF.":[105],"A":[106],"monolayer":[107],"perfluorodecyltrichlorosilane":[109],"(FDTS)":[110],"deposited":[112],"prevent":[114],"stiction.":[115]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}