{"id":"https://openalex.org/W2295470519","doi":"https://doi.org/10.1109/icoin.2016.7427155","title":"Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems","display_name":"Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems","publication_year":2016,"publication_date":"2016-01-01","ids":{"openalex":"https://openalex.org/W2295470519","doi":"https://doi.org/10.1109/icoin.2016.7427155","mag":"2295470519"},"language":"en","primary_location":{"id":"doi:10.1109/icoin.2016.7427155","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icoin.2016.7427155","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Conference on Information Networking (ICOIN)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009636635","display_name":"Jae Hwa Seo","orcid":"https://orcid.org/0000-0001-9370-299X"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jae Hwa Seo","raw_affiliation_strings":["Kyungpook National University, Daegu, Daegu, KR"],"affiliations":[{"raw_affiliation_string":"Kyungpook National University, Daegu, Daegu, KR","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013770173","display_name":"Young Jun Yoon","orcid":"https://orcid.org/0000-0001-8755-5057"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young Jun Yoon","raw_affiliation_strings":["School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050013484","display_name":"Ra Hee Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ra Hee Kwon","raw_affiliation_strings":["School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068717051","display_name":"Young In Jang","orcid":"https://orcid.org/0000-0002-5790-2078"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young In Jang","raw_affiliation_strings":["School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009572787","display_name":"In Man Kang","orcid":"https://orcid.org/0000-0002-7726-9740"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"In Man Kang","raw_affiliation_strings":["School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering Kyungpook National University, Deagu, Republic of Korea","institution_ids":["https://openalex.org/I31419693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5009636635"],"corresponding_institution_ids":["https://openalex.org/I31419693"],"apc_list":null,"apc_paid":null,"fwci":0.1838,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.54665183,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"442","last_page":"444"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.819699764251709},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.7492495775222778},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6823106408119202},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6080875396728516},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"Subthreshold swing","score":0.5393145084381104},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4686509966850281},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4527095854282379},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"Tunnel field-effect transistor","score":0.4408329129219055},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4351862072944641},{"id":"https://openalex.org/keywords/band-gap","display_name":"Band gap","score":0.432463139295578},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3388041853904724},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2953650951385498},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22161445021629333}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.819699764251709},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7492495775222778},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6823106408119202},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6080875396728516},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.5393145084381104},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4686509966850281},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4527095854282379},{"id":"https://openalex.org/C2775945429","wikidata":"https://www.wikidata.org/wiki/Q17139821","display_name":"Tunnel field-effect transistor","level":5,"score":0.4408329129219055},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4351862072944641},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.432463139295578},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3388041853904724},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2953650951385498},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22161445021629333}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icoin.2016.7427155","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icoin.2016.7427155","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Conference on Information Networking (ICOIN)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1976052793","https://openalex.org/W1979289724","https://openalex.org/W1996311233","https://openalex.org/W2061448829","https://openalex.org/W2061802855","https://openalex.org/W2066249658","https://openalex.org/W2071026599","https://openalex.org/W2077499673","https://openalex.org/W2079253651","https://openalex.org/W2079436784","https://openalex.org/W2110584581","https://openalex.org/W4237070762"],"related_works":["https://openalex.org/W2002796947","https://openalex.org/W2966056389","https://openalex.org/W3002982314","https://openalex.org/W4205969221","https://openalex.org/W2286143580","https://openalex.org/W3001885138","https://openalex.org/W2969223173","https://openalex.org/W1975037717","https://openalex.org/W4380878037","https://openalex.org/W4378678398"],"abstract_inverted_index":{"A":[0],"Si/Ge-based":[1,85],"heterojunction":[2,35,86],"arch-shaped":[3,30,87],"gate-all-around":[4],"(GAA)":[5],"tunneling":[6,42,81],"field-effect":[7],"transistor":[8],"(TFET)":[9],"which":[10,27,77],"applicable":[11],"for":[12,39],"future":[13],"mobile":[14],"communication":[15],"systems":[16],"has":[17],"been":[18],"design":[19],"and":[20,50,99],"analyzed.":[21],"Based":[22],"on":[23],"our":[24],"previous":[25],"work,":[26],"investigate":[28],"Si-based":[29],"GAA":[31,88],"TFET,":[32],"a":[33],"Si/Ge":[34],"structure":[36],"is":[37],"adopted":[38],"engineering":[40],"the":[41,54],"bandgap.":[43],"The":[44,83],"epitaxially":[45],"grown":[46],"channel":[47],"thickness":[48],"(tepi)":[49],"source":[51],"height":[52],"under":[53],"gate":[55],"region":[56],"(Hsource)":[57],"are":[58,78],"selected":[59],"as":[60],"simulation":[61],"variables.":[62],"By":[63],"this":[64],"variables,":[65],"we":[66],"can":[67],"optimize":[68],"on-state":[69],"current":[70],"(Ion)":[71],"with":[72],"subthreshold":[73],"swing":[74],"(S)":[75],"characteristics":[76],"affected":[79],"by":[80],"regions.":[82],"designed":[84],"TFET":[89],"demonstrate":[90],"Ion":[91],"of":[92,96,103],"14.6":[93],"A/mm,":[94],"S":[95],"28.5":[97],"mV/dec,":[98],"threshold":[100],"voltage":[101],"(Vt)":[102],"0.12":[104],"V.":[105]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}