{"id":"https://openalex.org/W4390606084","doi":"https://doi.org/10.1109/icm60448.2023.10378929","title":"A Sub-1dB Noise Figure Ku Band GaN Low Noise Amplifier for Space Applications","display_name":"A Sub-1dB Noise Figure Ku Band GaN Low Noise Amplifier for Space Applications","publication_year":2023,"publication_date":"2023-12-17","ids":{"openalex":"https://openalex.org/W4390606084","doi":"https://doi.org/10.1109/icm60448.2023.10378929"},"language":"en","primary_location":{"id":"doi:10.1109/icm60448.2023.10378929","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icm60448.2023.10378929","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102513623","display_name":"Husna Hamza","orcid":null},"institutions":[{"id":"https://openalex.org/I29891158","display_name":"University of Sharjah","ror":"https://ror.org/00engpz63","country_code":"AE","type":"education","lineage":["https://openalex.org/I29891158"]}],"countries":["AE"],"is_corresponding":true,"raw_author_name":"Husna Hamza","raw_affiliation_strings":["University of Sharjah,Electrical Engineering Department,Sharjah,United Arab Emirates","Electrical Engineering Department, University of Sharjah, Sharjah, United Arab Emirates"],"affiliations":[{"raw_affiliation_string":"University of Sharjah,Electrical Engineering Department,Sharjah,United Arab Emirates","institution_ids":["https://openalex.org/I29891158"]},{"raw_affiliation_string":"Electrical Engineering Department, University of Sharjah, Sharjah, United Arab Emirates","institution_ids":["https://openalex.org/I29891158"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075083686","display_name":"Anwar Jarndal","orcid":"https://orcid.org/0000-0002-1873-2088"},"institutions":[{"id":"https://openalex.org/I29891158","display_name":"University of Sharjah","ror":"https://ror.org/00engpz63","country_code":"AE","type":"education","lineage":["https://openalex.org/I29891158"]}],"countries":["AE"],"is_corresponding":false,"raw_author_name":"Anwar Jarndal","raw_affiliation_strings":["University of Sharjah,Electrical Engineering Department,Sharjah,United Arab Emirates","Electrical Engineering Department, University of Sharjah, Sharjah, United Arab Emirates"],"affiliations":[{"raw_affiliation_string":"University of Sharjah,Electrical Engineering Department,Sharjah,United Arab Emirates","institution_ids":["https://openalex.org/I29891158"]},{"raw_affiliation_string":"Electrical Engineering Department, University of Sharjah, Sharjah, United Arab Emirates","institution_ids":["https://openalex.org/I29891158"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5102513623"],"corresponding_institution_ids":["https://openalex.org/I29891158"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.11849918,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"168","last_page":"171"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9278857111930847},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.8238954544067383},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6842081546783447},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6720057725906372},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.6248856782913208},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6108003854751587},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5750576853752136},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5649335980415344},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5561714768409729},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5335457921028137},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.4331985116004944},{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuit","display_name":"Monolithic microwave integrated circuit","score":0.43032246828079224},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2751590609550476},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2639232873916626},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.13088417053222656},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.11987587809562683},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.09521633386611938},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.07137998938560486},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07047504186630249}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9278857111930847},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.8238954544067383},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6842081546783447},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6720057725906372},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.6248856782913208},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6108003854751587},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5750576853752136},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5649335980415344},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5561714768409729},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5335457921028137},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.4331985116004944},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.43032246828079224},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2751590609550476},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2639232873916626},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.13088417053222656},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.11987587809562683},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.09521633386611938},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.07137998938560486},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07047504186630249},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icm60448.2023.10378929","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icm60448.2023.10378929","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7400000095367432,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320316805","display_name":"University of Sharjah","ror":"https://ror.org/00engpz63"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W2096096172","https://openalex.org/W2141969290","https://openalex.org/W2170323672","https://openalex.org/W2328998895","https://openalex.org/W3037116235","https://openalex.org/W3133422710","https://openalex.org/W4288074013","https://openalex.org/W4294068702","https://openalex.org/W4362500732","https://openalex.org/W6634726093"],"related_works":["https://openalex.org/W1542549500","https://openalex.org/W2167356313","https://openalex.org/W2990861346","https://openalex.org/W2226943413","https://openalex.org/W1897760433","https://openalex.org/W1557806132","https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W4377089489","https://openalex.org/W4388207625"],"abstract_inverted_index":{"AlGaN/GaN":[0,51,85,88,113,133],"HEMT":[1,52,89,114,134],"technology":[2],"have":[3],"shown":[4],"excellent":[5],"results":[6],"for":[7,23,57],"the":[8,32,83],"construction":[9],"of":[10,36,96,126],"low-noise,":[11],"high-dynamic-range,":[12],"and":[13,34,77,100],"very":[14],"robust":[15],"amplifiers":[16],"in":[17],"addition":[18],"to":[19],"being":[20],"extensively":[21],"used":[22],"microwave":[24],"high-power":[25],"applications.":[26],"In":[27],"this":[28],"work,":[29],"we":[30],"report":[31],"design":[33],"simulation":[35],"a":[37,92,119,123],"Ku":[38],"band":[39],"two":[40],"stage":[41],"cascaded":[42],"low-noise":[43],"amplifier":[44],"(LNA)":[45],"using":[46,72,112],"250":[47],"nm":[48],"gate":[49],"length":[50],"on":[53],"silicon":[54],"carbide":[55],"(SiC)":[56],"space":[58],"application":[59],"with":[60,82,115,122],"sub":[61],"1":[62],"dB":[63,99,103,128],"noise":[64,93,124],"figure.":[65],"The":[66,87,109],"device":[67],"structure":[68],"was":[69,80],"improved":[70],"by":[71,140],"AlInN":[73,116,142],"back":[74],"barrier":[75],"(BB)":[76],"its":[78],"performance":[79,136],"compared":[81],"conventional":[84],"HEMT.":[86],"LNA":[90,110,135],"has":[91],"figure":[94,125],"(NF)":[95],"about":[97],"2.5":[98],"over":[101],"11.5":[102],"linear":[104],"gain":[105,121],"at":[106,129],"13":[107,130],"GHz.":[108,131],"designed":[111],"BB":[117],"exhibited":[118],"similar":[120],"0.98":[127],"Thus,":[132],"can":[137],"be":[138],"enhanced":[139],"incorporating":[141],"BB.":[143]},"counts_by_year":[],"updated_date":"2025-12-25T23:11:45.687758","created_date":"2025-10-10T00:00:00"}