{"id":"https://openalex.org/W4206066003","doi":"https://doi.org/10.1109/icm52667.2021.9664923","title":"Design and Simulation of Carbon Nanotube Based Current Source Load Differential Amplifier","display_name":"Design and Simulation of Carbon Nanotube Based Current Source Load Differential Amplifier","publication_year":2021,"publication_date":"2021-12-19","ids":{"openalex":"https://openalex.org/W4206066003","doi":"https://doi.org/10.1109/icm52667.2021.9664923"},"language":"en","primary_location":{"id":"doi:10.1109/icm52667.2021.9664923","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm52667.2021.9664923","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061013711","display_name":"M. Saqib Akhoon","orcid":null},"institutions":[{"id":"https://openalex.org/I139322472","display_name":"Universiti Sains Malaysia","ror":"https://ror.org/02rgb2k63","country_code":"MY","type":"education","lineage":["https://openalex.org/I139322472"]},{"id":"https://openalex.org/I2801106189","display_name":"Dijlah University College","ror":"https://ror.org/03vndx142","country_code":"IQ","type":"education","lineage":["https://openalex.org/I2801106189"]}],"countries":["IQ","MY"],"is_corresponding":false,"raw_author_name":"M. Saqib Akhoon","raw_affiliation_strings":["Al-Falah University, New Delhi","Intelligent Biometric Group, School of Electrical and Electronic Engineering, Universiti Sains Malaysia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Al-Falah University, New Delhi","institution_ids":["https://openalex.org/I2801106189"]},{"raw_affiliation_string":"Intelligent Biometric Group, School of Electrical and Electronic Engineering, Universiti Sains Malaysia","institution_ids":["https://openalex.org/I139322472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065659905","display_name":"Abdullah G. Alharbi","orcid":"https://orcid.org/0000-0002-1972-4741"},"institutions":[{"id":"https://openalex.org/I199702508","display_name":"Jouf University","ror":"https://ror.org/02zsyt821","country_code":"SA","type":"education","lineage":["https://openalex.org/I199702508"]}],"countries":["SA"],"is_corresponding":false,"raw_author_name":"Abdullah G. Alharbi","raw_affiliation_strings":["Jouf University, Sakaka, Saudi Arabia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Jouf University, Sakaka, Saudi Arabia","institution_ids":["https://openalex.org/I199702508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058079041","display_name":"Majid A. Bhat","orcid":null},"institutions":[{"id":"https://openalex.org/I2801106189","display_name":"Dijlah University College","ror":"https://ror.org/03vndx142","country_code":"IQ","type":"education","lineage":["https://openalex.org/I2801106189"]}],"countries":["IQ"],"is_corresponding":false,"raw_author_name":"Majid A. Bhat","raw_affiliation_strings":["Al-Falah University, New Delhi"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Al-Falah University, New Delhi","institution_ids":["https://openalex.org/I2801106189"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064121601","display_name":"Shahrel Azmin Suandi","orcid":"https://orcid.org/0000-0001-9980-7426"},"institutions":[{"id":"https://openalex.org/I139322472","display_name":"Universiti Sains Malaysia","ror":"https://ror.org/02rgb2k63","country_code":"MY","type":"education","lineage":["https://openalex.org/I139322472"]}],"countries":["MY"],"is_corresponding":false,"raw_author_name":"Shahrel A. Suandi","raw_affiliation_strings":["Intelligent Biometric Group, School of Electrical and Electronic Engineering, Universiti Sains Malaysia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intelligent Biometric Group, School of Electrical and Electronic Engineering, Universiti Sains Malaysia","institution_ids":["https://openalex.org/I139322472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016512159","display_name":"Javed Ashraf","orcid":"https://orcid.org/0000-0003-1329-4661"},"institutions":[{"id":"https://openalex.org/I2801106189","display_name":"Dijlah University College","ror":"https://ror.org/03vndx142","country_code":"IQ","type":"education","lineage":["https://openalex.org/I2801106189"]}],"countries":["IQ"],"is_corresponding":false,"raw_author_name":"Javed Ashraf","raw_affiliation_strings":["Al-Falah University, New Delhi"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Al-Falah University, New Delhi","institution_ids":["https://openalex.org/I2801106189"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5001350813","display_name":"Sajad A. Loan","orcid":"https://orcid.org/0000-0002-3936-3947"},"institutions":[{"id":"https://openalex.org/I59475050","display_name":"Jamia Millia Islamia","ror":"https://ror.org/00pnhhv55","country_code":"IN","type":"education","lineage":["https://openalex.org/I59475050"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sajad A Loan","raw_affiliation_strings":["Jamia Millia Islamia, New Delhi"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Jamia Millia Islamia, New Delhi","institution_ids":["https://openalex.org/I59475050"]}]}],"institutions":[],"countries_distinct_count":4,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5095,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.61529582,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"140","last_page":"143"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.843882143497467},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.7034231424331665},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6267213821411133},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5499642491340637},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5401744842529297},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5373832583427429},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4558098018169403},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.44145667552948},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.42902424931526184},{"id":"https://openalex.org/keywords/current-source","display_name":"Current source","score":0.41850197315216064},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.412384569644928},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.3712241053581238},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.3697599172592163},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36664044857025146},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3440916836261749},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23697635531425476},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1848771572113037},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12340492010116577},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09831908345222473}],"concepts":[{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.843882143497467},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.7034231424331665},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6267213821411133},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5499642491340637},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5401744842529297},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5373832583427429},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4558098018169403},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.44145667552948},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.42902424931526184},{"id":"https://openalex.org/C2781331714","wikidata":"https://www.wikidata.org/wiki/Q1163768","display_name":"Current source","level":3,"score":0.41850197315216064},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.412384569644928},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.3712241053581238},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.3697599172592163},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36664044857025146},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3440916836261749},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23697635531425476},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1848771572113037},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12340492010116577},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09831908345222473}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icm52667.2021.9664923","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm52667.2021.9664923","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7400000095367432,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W59711591","https://openalex.org/W1597620877","https://openalex.org/W1973391726","https://openalex.org/W1979931298","https://openalex.org/W1993896794","https://openalex.org/W2018858346","https://openalex.org/W2086939828","https://openalex.org/W2100847661","https://openalex.org/W2117379410","https://openalex.org/W2143058458","https://openalex.org/W2148936886","https://openalex.org/W2162806784","https://openalex.org/W2164276509","https://openalex.org/W2166723396","https://openalex.org/W2169245181","https://openalex.org/W2280576793","https://openalex.org/W2806879540","https://openalex.org/W2894228100","https://openalex.org/W3022879520","https://openalex.org/W3147616483","https://openalex.org/W3162926698","https://openalex.org/W4298361835","https://openalex.org/W6695205800"],"related_works":["https://openalex.org/W2570275273","https://openalex.org/W1992124208","https://openalex.org/W2555149966","https://openalex.org/W2317479535","https://openalex.org/W1579695216","https://openalex.org/W1976161475","https://openalex.org/W3124581103","https://openalex.org/W1976780206","https://openalex.org/W2027914081","https://openalex.org/W2146902916"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"design":[4],"and":[5,28,126],"simulate":[6],"a":[7,63],"current":[8,25],"source":[9,26],"load":[10,27],"differential":[11],"amplifier":[12],"(CSL-DA)":[13],"employing":[14],"n-type":[15],"carbon-nanotube":[16],"field":[17],"effect":[18],"transistors":[19],"(CNTFET).":[20],"The":[21,36,57,82],"proposed":[22,40,74,87,160],"DA":[23,43,75,106,161],"employs":[24],"is":[29],"based":[30,42,55,105,137],"on":[31],"45nm":[32],"technology":[33],"node":[34],"CNTFETs.":[35],"performance":[37,69,83,157],"of":[38,96,146,158],"the":[39,48,73,79,86,93,103,134,156,159],"CNTFET":[41,104],"has":[44,61,99,107],"been":[45,100],"compared":[46,132],"with":[47],"conventional":[49,80,135],"metal":[50],"oxide":[51],"semiconductor":[52],"FET":[53],"(MOSFET)":[54],"DA.":[56,81],"HSPICE":[58],"simulation":[59],"study":[60],"shown":[62],"substantial":[64],"improvement":[65],"in":[66,72,76,85,112,117,122,129],"various":[67,141],"important":[68],"measuring":[70],"parameters":[71,143],"comparison":[77],"to":[78,92,133],"enhancement":[84,111],"device":[88],"can":[89,154],"be":[90],"attributed":[91],"unique":[94],"properties":[95],"CNTs.":[97],"It":[98],"observed":[101],"that":[102],"got":[108],"2.7":[109],"times":[110,120],"gain,":[113],"three":[114],"orders":[115],"increase":[116,121],"bandwidth,":[118],"1180":[119],"unity":[123],"gain":[124],"bandwidth":[125],"~70%":[127],"reduction":[128],"power":[130],"consumption":[131],"MOS":[136],"counterpart.":[138],"Further,":[139],"optimizing":[140],"CNT":[142,149,152],"like":[144],"number":[145],"CNTs":[147],"(N),":[148],"pitch":[150],"(S),":[151],"diameter":[153],"optimize":[155],"further.":[162]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}