{"id":"https://openalex.org/W3129148946","doi":"https://doi.org/10.1109/icm50269.2020.9331500","title":"Low Power Scalable Ternary Hybrid Full Adder Realization","display_name":"Low Power Scalable Ternary Hybrid Full Adder Realization","publication_year":2020,"publication_date":"2020-12-14","ids":{"openalex":"https://openalex.org/W3129148946","doi":"https://doi.org/10.1109/icm50269.2020.9331500","mag":"3129148946"},"language":"en","primary_location":{"id":"doi:10.1109/icm50269.2020.9331500","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm50269.2020.9331500","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 32nd International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051628163","display_name":"Mohamed S. Ghoneim","orcid":"https://orcid.org/0000-0001-9853-5991"},"institutions":[{"id":"https://openalex.org/I57629906","display_name":"Nile University","ror":"https://ror.org/03cg7cp61","country_code":"EG","type":"education","lineage":["https://openalex.org/I57629906"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Mohamed S. Ghoneim","raw_affiliation_strings":["Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt","institution_ids":["https://openalex.org/I57629906"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045750478","display_name":"Amr Mohammaden","orcid":null},"institutions":[{"id":"https://openalex.org/I57629906","display_name":"Nile University","ror":"https://ror.org/03cg7cp61","country_code":"EG","type":"education","lineage":["https://openalex.org/I57629906"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Amr Mohammaden","raw_affiliation_strings":["Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt","institution_ids":["https://openalex.org/I57629906"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005253441","display_name":"Rana Hesham","orcid":null},"institutions":[{"id":"https://openalex.org/I57629906","display_name":"Nile University","ror":"https://ror.org/03cg7cp61","country_code":"EG","type":"education","lineage":["https://openalex.org/I57629906"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Rana Hesham","raw_affiliation_strings":["Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt","institution_ids":["https://openalex.org/I57629906"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035566088","display_name":"Ahmed H. Madian","orcid":"https://orcid.org/0000-0001-8313-8088"},"institutions":[{"id":"https://openalex.org/I3089115","display_name":"Egyptian Atomic Energy Authority","ror":"https://ror.org/04hd0yz67","country_code":"EG","type":"government","lineage":["https://openalex.org/I3089115"]},{"id":"https://openalex.org/I57629906","display_name":"Nile University","ror":"https://ror.org/03cg7cp61","country_code":"EG","type":"education","lineage":["https://openalex.org/I57629906"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Ahmed H. Madian","raw_affiliation_strings":["Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt","Radiation Engineering Dept., NCRRT, Egyptian Atomic Energy Authority, Egypt"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics Integrated Systems Center (NISC), Nile University, Egypt","institution_ids":["https://openalex.org/I57629906"]},{"raw_affiliation_string":"Radiation Engineering Dept., NCRRT, Egyptian Atomic Energy Authority, Egypt","institution_ids":["https://openalex.org/I3089115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5051628163"],"corresponding_institution_ids":["https://openalex.org/I57629906"],"apc_list":null,"apc_paid":null,"fwci":0.3082,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.5880423,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/adder","display_name":"Adder","score":0.8453084230422974},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6945463418960571},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6126781702041626},{"id":"https://openalex.org/keywords/ternary-operation","display_name":"Ternary operation","score":0.5967755913734436},{"id":"https://openalex.org/keywords/realization","display_name":"Realization (probability)","score":0.5604135990142822},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5556695461273193},{"id":"https://openalex.org/keywords/transistor-count","display_name":"Transistor count","score":0.5348806381225586},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5016095638275146},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.4767273962497711},{"id":"https://openalex.org/keywords/serial-binary-adder","display_name":"Serial binary adder","score":0.4575241804122925},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.43748247623443604},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.40196359157562256},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.3909105956554413},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.297751247882843},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1604352593421936},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.0857958197593689},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07616427540779114}],"concepts":[{"id":"https://openalex.org/C164620267","wikidata":"https://www.wikidata.org/wiki/Q376953","display_name":"Adder","level":3,"score":0.8453084230422974},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6945463418960571},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6126781702041626},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.5967755913734436},{"id":"https://openalex.org/C2781089630","wikidata":"https://www.wikidata.org/wiki/Q21856745","display_name":"Realization (probability)","level":2,"score":0.5604135990142822},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5556695461273193},{"id":"https://openalex.org/C196320899","wikidata":"https://www.wikidata.org/wiki/Q2623746","display_name":"Transistor count","level":4,"score":0.5348806381225586},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5016095638275146},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.4767273962497711},{"id":"https://openalex.org/C116206932","wikidata":"https://www.wikidata.org/wiki/Q7454686","display_name":"Serial binary adder","level":4,"score":0.4575241804122925},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.43748247623443604},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.40196359157562256},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.3909105956554413},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.297751247882843},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1604352593421936},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0857958197593689},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07616427540779114},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icm50269.2020.9331500","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm50269.2020.9331500","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 32nd International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6299999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1525148056","https://openalex.org/W1979667573","https://openalex.org/W1993573404","https://openalex.org/W2018735115","https://openalex.org/W2025033338","https://openalex.org/W2025152094","https://openalex.org/W2027526983","https://openalex.org/W2542336198","https://openalex.org/W2568360271","https://openalex.org/W2769274962","https://openalex.org/W2781760381","https://openalex.org/W2937382037","https://openalex.org/W2943019196","https://openalex.org/W2955599918","https://openalex.org/W2966266177","https://openalex.org/W2972696482","https://openalex.org/W2995676478","https://openalex.org/W2995934438","https://openalex.org/W6631432970","https://openalex.org/W6768015244","https://openalex.org/W6771874413"],"related_works":["https://openalex.org/W3166220017","https://openalex.org/W2595074880","https://openalex.org/W4206995395","https://openalex.org/W2559769120","https://openalex.org/W1998295417","https://openalex.org/W2183648978","https://openalex.org/W2394021504","https://openalex.org/W1882870471","https://openalex.org/W1923598886","https://openalex.org/W2119296295"],"abstract_inverted_index":{"Multi-level":[0],"electronic":[1],"systems":[2],"offer":[3],"speed":[4],"and":[5,13,38,59,99,106],"area":[6],"simplicity,":[7],"reducing":[8],"the":[9,55,64,84,92,111,114],"complexity":[10],"of":[11],"implementation":[12],"power":[14,130],"dissipation.":[15],"In":[16],"this":[17],"paper,":[18],"a":[19,118,125],"Hybrid":[20],"ternary":[21,95],"Full":[22],"Adder":[23],"(FA)":[24],"is":[25,45,68,80],"proposed":[26,43,56,115],"using":[27],"Conventional":[28],"Complementary":[29],"Metal":[30],"Oxide":[31],"Semiconductor":[32],"(CCMOS),":[33],"Double":[34],"Pass-transistor":[35],"Logic":[36],"(DPL),":[37],"Pass":[39],"Transistors":[40],"(PT).":[41],"The":[42,94],"FA":[44],"extended":[46],"up":[47],"to":[48,50,82,110],"64-bits":[49],"test":[51],"scalability.":[52],"To":[53],"validate":[54],"full":[57],"adder":[58],"calculate":[60],"its":[61],"performance":[62],"analysis,":[63],"Cadence":[65],"Virtuoso":[66],"toolset":[67],"used":[69],"at":[70],"technology":[71],"130nm":[72],"with":[73,103],"supply":[74],"voltage":[75],"0.9V.":[76],"An":[77],"extra":[78],"transistor":[79],"added":[81],"overcome":[83],"sneak":[85],"path":[86],"problem":[87],"that":[88],"was":[89],"detected":[90],"during":[91],"simulation.":[93],"values":[96],"0,":[97],"1,":[98],"2":[100],"are":[101],"represented":[102],"0V,":[104],"0.45V":[105],"0.9V":[107],"respectively.":[108],"According":[109],"simulation":[112],"results,":[113],"work":[116],"shows":[117],"superior":[119],"performance,":[120],"which":[121],"could":[122],"be":[123],"considered":[124],"promising":[126],"alternative":[127],"for":[128],"low":[129],"applications.":[131]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}