{"id":"https://openalex.org/W2943702511","doi":"https://doi.org/10.1109/icm.2018.8704084","title":"Multi-Bit RRAM Transient Modelling and Analysis","display_name":"Multi-Bit RRAM Transient Modelling and Analysis","publication_year":2018,"publication_date":"2018-12-01","ids":{"openalex":"https://openalex.org/W2943702511","doi":"https://doi.org/10.1109/icm.2018.8704084","mag":"2943702511"},"language":"en","primary_location":{"id":"doi:10.1109/icm.2018.8704084","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm.2018.8704084","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 30th International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072825297","display_name":"Essam Berikaa","orcid":"https://orcid.org/0000-0002-2782-2341"},"institutions":[{"id":"https://openalex.org/I4210150948","display_name":"Zewail City of Science and Technology","ror":"https://ror.org/04w5f4y88","country_code":"EG","type":"education","lineage":["https://openalex.org/I4210150948"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Essam R. Berikaa","raw_affiliation_strings":["Nanotechnology Engineering Department, University of Science and Technology, Zewail city, Egypt"],"affiliations":[{"raw_affiliation_string":"Nanotechnology Engineering Department, University of Science and Technology, Zewail city, Egypt","institution_ids":["https://openalex.org/I4210150948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077046936","display_name":"A. A. I. Khalil","orcid":"https://orcid.org/0000-0003-2629-058X"},"institutions":[{"id":"https://openalex.org/I4210150948","display_name":"Zewail City of Science and Technology","ror":"https://ror.org/04w5f4y88","country_code":"EG","type":"education","lineage":["https://openalex.org/I4210150948"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Ahmed Khalil","raw_affiliation_strings":["Nanotechnology Engineering Department, University of Science and Technology, Zewail city, Egypt"],"affiliations":[{"raw_affiliation_string":"Nanotechnology Engineering Department, University of Science and Technology, Zewail city, Egypt","institution_ids":["https://openalex.org/I4210150948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029911347","display_name":"Hagar Hossam","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hagar Hossam","raw_affiliation_strings":["Electronics and Communications Engineering Department, Ain-Shams University, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Communications Engineering Department, Ain-Shams University, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107914788","display_name":"Mohamed A. El-Dessouky","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Mohamed El-Dessouky","raw_affiliation_strings":["Electronics and Communications Engineering Department, Ain-Shams University, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Communications Engineering Department, Ain-Shams University, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063929219","display_name":"Hassan Mostafa","orcid":"https://orcid.org/0000-0003-0043-5007"},"institutions":[{"id":"https://openalex.org/I145487455","display_name":"Cairo University","ror":"https://ror.org/03q21mh05","country_code":"EG","type":"education","lineage":["https://openalex.org/I145487455"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hassan Mostafa","raw_affiliation_strings":["Electronics and Communications Engineering Department, Cairo University, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Communications Engineering Department, Cairo University, Egypt","institution_ids":["https://openalex.org/I145487455"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5072825297"],"corresponding_institution_ids":["https://openalex.org/I4210150948"],"apc_list":null,"apc_paid":null,"fwci":0.515,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.6923559,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"232","last_page":"235"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7943705320358276},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.6130813360214233},{"id":"https://openalex.org/keywords/transient-analysis","display_name":"Transient analysis","score":0.5719389319419861},{"id":"https://openalex.org/keywords/bit","display_name":"Bit (key)","score":0.564061164855957},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5040515661239624},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1937631368637085},{"id":"https://openalex.org/keywords/transient-response","display_name":"Transient response","score":0.17489194869995117},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10541468858718872},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.05758151412010193}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7943705320358276},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.6130813360214233},{"id":"https://openalex.org/C2989121073","wikidata":"https://www.wikidata.org/wiki/Q1309019","display_name":"Transient analysis","level":3,"score":0.5719389319419861},{"id":"https://openalex.org/C117011727","wikidata":"https://www.wikidata.org/wiki/Q1278488","display_name":"Bit (key)","level":2,"score":0.564061164855957},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5040515661239624},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1937631368637085},{"id":"https://openalex.org/C85761212","wikidata":"https://www.wikidata.org/wiki/Q1974593","display_name":"Transient response","level":2,"score":0.17489194869995117},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10541468858718872},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05758151412010193},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icm.2018.8704084","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm.2018.8704084","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 30th International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1578783943","https://openalex.org/W1971000062","https://openalex.org/W1975708743","https://openalex.org/W2007898123","https://openalex.org/W2016922062","https://openalex.org/W2043707274","https://openalex.org/W2061396111","https://openalex.org/W2082063783","https://openalex.org/W2086322904","https://openalex.org/W2087261283","https://openalex.org/W2099554009","https://openalex.org/W2112181056","https://openalex.org/W2136288682","https://openalex.org/W2137862082","https://openalex.org/W2162279286","https://openalex.org/W2162651880","https://openalex.org/W2163031927","https://openalex.org/W2329040051","https://openalex.org/W2331904682","https://openalex.org/W2515763243","https://openalex.org/W2914198687","https://openalex.org/W6837756535"],"related_works":["https://openalex.org/W2758798772","https://openalex.org/W2081338125","https://openalex.org/W2016851290","https://openalex.org/W2537731695","https://openalex.org/W2001630809","https://openalex.org/W4239924455","https://openalex.org/W4244925124","https://openalex.org/W2377879397","https://openalex.org/W1577327694","https://openalex.org/W2887517211"],"abstract_inverted_index":{"Memristors":[0],"have":[1],"gained":[2],"significant":[3],"attention":[4],"in":[5,14,96],"various":[6],"applications":[7],"due":[8],"to":[9,28],"their":[10],"unique":[11],"properties,":[12],"especially":[13],"nonvolatile":[15],"memory":[16,52],"technologies.":[17],"Thus,":[18],"there":[19],"exist":[20],"many":[21],"mathematical":[22],"and":[23,85,89],"compact":[24],"models":[25,47,69,95],"that":[26,63],"aim":[27],"simulate":[29],"the":[30,42,65,72,78,81,87,90,93],"behavior":[31],"of":[32,44,67,80,92],"memristors":[33],"accurately.":[34],"In":[35],"this":[36,57],"work,":[37],"a":[38,60],"comparative":[39],"study":[40],"on":[41,71],"capability":[43],"different":[45],"memristor":[46,68],"for":[48],"transient":[49,97],"multi-bit":[50],"memristive":[51],"simulation":[53],"is":[54],"conducted.":[55],"Moreover,":[56],"paper":[58],"proposes":[59],"window":[61,83],"function":[62,84],"improves":[64],"accuracy":[66],"based":[70],"filament-growth":[73],"theory.":[74],"Simulation":[75],"results":[76],"reveal":[77],"enhancements":[79],"proposed":[82],"highlight":[86],"advantages":[88],"disadvantages":[91],"studied":[94],"analysis.":[98]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}