{"id":"https://openalex.org/W2787304654","doi":"https://doi.org/10.1109/icm.2017.8268847","title":"Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies","display_name":"Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies","publication_year":2017,"publication_date":"2017-12-01","ids":{"openalex":"https://openalex.org/W2787304654","doi":"https://doi.org/10.1109/icm.2017.8268847","mag":"2787304654"},"language":"en","primary_location":{"id":"doi:10.1109/icm.2017.8268847","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm.2017.8268847","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 29th International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063768507","display_name":"M. Seif","orcid":null},"institutions":[{"id":"https://openalex.org/I19894307","display_name":"Universit\u00e9 de Montpellier","ror":"https://ror.org/051escj72","country_code":"FR","type":"education","lineage":["https://openalex.org/I19894307"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Seif","raw_affiliation_strings":["IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France","institution_ids":["https://openalex.org/I19894307"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108794446","display_name":"F. Pascal","orcid":null},"institutions":[{"id":"https://openalex.org/I19894307","display_name":"Universit\u00e9 de Montpellier","ror":"https://ror.org/051escj72","country_code":"FR","type":"education","lineage":["https://openalex.org/I19894307"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Pascal","raw_affiliation_strings":["IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France","institution_ids":["https://openalex.org/I19894307"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102763206","display_name":"B. Sagnes","orcid":"https://orcid.org/0000-0002-6324-8594"},"institutions":[{"id":"https://openalex.org/I19894307","display_name":"Universit\u00e9 de Montpellier","ror":"https://ror.org/051escj72","country_code":"FR","type":"education","lineage":["https://openalex.org/I19894307"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"B. Sagnes","raw_affiliation_strings":["IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France","institution_ids":["https://openalex.org/I19894307"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084508073","display_name":"J. Elbeyrouthy","orcid":null},"institutions":[{"id":"https://openalex.org/I19894307","display_name":"Universit\u00e9 de Montpellier","ror":"https://ror.org/051escj72","country_code":"FR","type":"education","lineage":["https://openalex.org/I19894307"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Elbeyrouthy","raw_affiliation_strings":["IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France","institution_ids":["https://openalex.org/I19894307"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061584874","display_name":"A. Hoffmann","orcid":"https://orcid.org/0000-0002-0697-4215"},"institutions":[{"id":"https://openalex.org/I19894307","display_name":"Universit\u00e9 de Montpellier","ror":"https://ror.org/051escj72","country_code":"FR","type":"education","lineage":["https://openalex.org/I19894307"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Hoffmann","raw_affiliation_strings":["IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IES, Universit\u00e9 de Montpellier, Montpellier Cedex, France","institution_ids":["https://openalex.org/I19894307"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051158092","display_name":"S. Haendler","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Haendler","raw_affiliation_strings":["STMicroelectronics, Crolles Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles Cedex, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024136451","display_name":"P. Chevalier","orcid":"https://orcid.org/0000-0003-1848-9986"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Chevalier","raw_affiliation_strings":["STMicroelectronics, Crolles Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles Cedex, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110024146","display_name":"D. Gloria","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"D. Gloria","raw_affiliation_strings":["STMicroelectronics, Crolles Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles Cedex, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7584,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.68753407,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.6377940773963928},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5537444949150085},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.5387348532676697},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.5215016007423401},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5086744427680969},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.44815218448638916},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4016351103782654},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.37119919061660767},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.27141574025154114},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24110212922096252},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.22093987464904785},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16549301147460938},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1165308952331543}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.6377940773963928},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5537444949150085},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.5387348532676697},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5215016007423401},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5086744427680969},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.44815218448638916},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4016351103782654},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37119919061660767},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.27141574025154114},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24110212922096252},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.22093987464904785},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16549301147460938},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1165308952331543},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icm.2017.8268847","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icm.2017.8268847","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 29th International Conference on Microelectronics (ICM)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1971474264","https://openalex.org/W1985358896","https://openalex.org/W1990900138","https://openalex.org/W1999482106","https://openalex.org/W2002697935","https://openalex.org/W2017358755","https://openalex.org/W2052492970","https://openalex.org/W2059181852","https://openalex.org/W2059199691","https://openalex.org/W2112970705","https://openalex.org/W2153497674","https://openalex.org/W2160176349","https://openalex.org/W2171907888","https://openalex.org/W4298528448","https://openalex.org/W6677100968","https://openalex.org/W6682738938"],"related_works":["https://openalex.org/W4387933462","https://openalex.org/W1492027935","https://openalex.org/W2140183546","https://openalex.org/W2537721720","https://openalex.org/W2140681148","https://openalex.org/W1544173589","https://openalex.org/W1586292687","https://openalex.org/W2154960098","https://openalex.org/W2145182938","https://openalex.org/W2555993941"],"abstract_inverted_index":{"The":[0,70,94,177],"main":[1],"objective":[2],"of":[3,6,17,50,91,98,105,136,167,216],"the":[4,13,18,28,51,78,112,125,134,155,165,173,186,194,204,211],"development":[5,122],"new":[7],"BiCMOS":[8,60,85],"technologies":[9,61,115],"is":[10,31],"to":[11,36,144,161,164,172,183,200],"enhance":[12],"high":[14],"frequency":[15,127],"performances":[16],"devices.":[19],"Nevertheless,":[20],"Low":[21],"Frequency":[22],"Noise":[23,220],"(LFN)":[24],"analysis,":[25],"in":[26,54,77],"particular":[27],"1/f":[29,52,92,156],"noise,":[30],"a":[32,38,45,82,88,150],"very":[33],"sensitive":[34],"tool":[35],"evaluate":[37],"technology.":[39,197],"In":[40,147,198],"this":[41],"work":[42],"we":[43,207],"present":[44],"complete":[46],"characterization":[47],"and":[48,67,119,169,191,221],"modeling":[49],"noise":[53,128,145,157],"Si/SiGe:C":[55],"HBTs":[56,79,109,148],"issued":[57,80,110],"from":[58,81,111],"three":[59],"(130":[62],"nm,":[63],"shrinked":[64,187],"130":[65,83,117,188],"nm":[66,84,118,189,196],"55":[68,123,195],"nm).":[69],"measured":[71],"base":[72],"current":[73],"spectral":[74],"density":[75],"SIB,":[76],"technology,":[86],"presented":[87],"typical":[89,151],"behavior":[90,152],"noise.":[93],"extracted":[95,178],"SPICE":[96],"figure":[97,215],"merit":[99,217],"Kb":[100,179],"has":[101],"an":[102],"excellent":[103],"value":[104,180],"1.4":[106],"10-10\u03bcm2.":[107],"For":[108],"two":[113],"other":[114],"(shrinked":[116],"recent":[120],"under":[121],"nm)":[124],"low":[126],"spectra":[129],"are":[130],"often":[131],"disrupted":[132],"by":[133],"presence":[135],"more":[137],"or":[138],"less":[139],"pronounced":[140],"Lorentzian":[141],"shape":[142],"leading":[143],"dispersion.":[146],"where":[149],"was":[153,159,181],"observed,":[154],"level":[158],"found":[160],"be":[162],"proportional":[163,171],"square":[166],"IB,":[168],"inversely":[170],"emitter":[174],"area":[175],"Ae.":[176],"equal":[182],"6":[184],"10-10for":[185],"technology":[190],"approximately":[192],"10-9\u03bc2for":[193],"order":[199],"take":[201],"into":[202],"account":[203],"HF":[205,222],"performances,":[206],"have":[208],"also":[209],"studied":[210],"ratio":[212],"fc/ft.":[213],"This":[214],"combines":[218],"LF":[219],"characteristics.":[223]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}