{"id":"https://openalex.org/W3127562312","doi":"https://doi.org/10.1109/ickii50300.2020.9318785","title":"Patterns of Exposing Integrity of 28nm-node High-k Gate Dielectric on p-substrate with Nitridation Treatments","display_name":"Patterns of Exposing Integrity of 28nm-node High-k Gate Dielectric on p-substrate with Nitridation Treatments","publication_year":2020,"publication_date":"2020-08-21","ids":{"openalex":"https://openalex.org/W3127562312","doi":"https://doi.org/10.1109/ickii50300.2020.9318785","mag":"3127562312"},"language":"en","primary_location":{"id":"doi:10.1109/ickii50300.2020.9318785","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ickii50300.2020.9318785","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061856950","display_name":"Siping Li","orcid":"https://orcid.org/0000-0002-8049-6979"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Si-Ping Li","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020281355","display_name":"Jiawei Xu","orcid":"https://orcid.org/0000-0001-9010-5081"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jia-Wei Xu","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101421244","display_name":"Weihao Li","orcid":"https://orcid.org/0000-0003-4356-1716"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wei-Hao Li","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100621854","display_name":"Jianming Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jian-Ming Chen","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081117308","display_name":"Chao\u2010Nan Wei","orcid":"https://orcid.org/0000-0001-7063-5229"},"institutions":[{"id":"https://openalex.org/I189290911","display_name":"National Chung Shan Institute of Science and Technology","ror":"https://ror.org/034ezwg26","country_code":"TW","type":"government","lineage":["https://openalex.org/I189290911"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chao-Nan Wei","raw_affiliation_strings":["Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I189290911"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110582675","display_name":"Wen\u2010How Lan","orcid":null},"institutions":[{"id":"https://openalex.org/I192168892","display_name":"National University of Kaohsiung","ror":"https://ror.org/013zjb662","country_code":"TW","type":"education","lineage":["https://openalex.org/I192168892"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-How Lan","raw_affiliation_strings":["National University of Kaohsiung, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National University of Kaohsiung, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I192168892"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026006461","display_name":"Mu\u2010Chun Wang","orcid":"https://orcid.org/0000-0002-4605-0658"},"institutions":[{"id":"https://openalex.org/I143003336","display_name":"Minghsin University of Science and Technology","ror":"https://ror.org/054etzm63","country_code":"TW","type":"education","lineage":["https://openalex.org/I143003336"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Mu-Chun Wang","raw_affiliation_strings":["Minghsin University of Science and Technology, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Minghsin University of Science and Technology, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I143003336"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.25210473,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"4226","issue":null,"first_page":"67","last_page":"70"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.779079794883728},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7321725487709045},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.7221488952636719},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6850612163543701},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.6674095392227173},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.59380042552948},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5892683863639832},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.524637758731842},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.47486329078674316},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45485830307006836},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4316335618495941},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4237241744995117},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.41992902755737305},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4066019654273987},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37464839220046997},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.13842949271202087},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13246533274650574},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10472193360328674},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.08079996705055237},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.06790432333946228}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.779079794883728},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7321725487709045},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.7221488952636719},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6850612163543701},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6674095392227173},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.59380042552948},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5892683863639832},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.524637758731842},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.47486329078674316},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45485830307006836},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4316335618495941},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4237241744995117},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.41992902755737305},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4066019654273987},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37464839220046997},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.13842949271202087},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13246533274650574},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10472193360328674},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08079996705055237},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06790432333946228},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ickii50300.2020.9318785","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ickii50300.2020.9318785","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5199999809265137,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W324409780","https://openalex.org/W385822492","https://openalex.org/W2097841494","https://openalex.org/W2112285517","https://openalex.org/W2112968163","https://openalex.org/W2156274094","https://openalex.org/W2158476189","https://openalex.org/W2217814672","https://openalex.org/W2488434484","https://openalex.org/W2796276931","https://openalex.org/W3033311098"],"related_works":["https://openalex.org/W2084196976","https://openalex.org/W2071712090","https://openalex.org/W1973221791","https://openalex.org/W2796938634","https://openalex.org/W2287887285","https://openalex.org/W2074099177","https://openalex.org/W2064786169","https://openalex.org/W2115152876","https://openalex.org/W2363136417","https://openalex.org/W2002140510"],"abstract_inverted_index":{"Well-designed":[0],"test":[1],"patters":[2],"are":[3],"useful":[4],"to":[5],"investigate":[6],"the":[7,24,29,34,47,61,68,75,95,99,105],"integrity":[8,69],"of":[9,26,36,49,52,70,77],"gate":[10,27,58,65,72,90],"dielectric,":[11,28],"especially":[12],"in":[13],"advanced":[14],"nano-node":[15],"process":[16,39],"technology":[17],"with":[18,74,94,108],"high-k":[19,71],"Hf-based":[20],"dielectric.":[21],"Besides":[22],"monitoring":[23],"growth":[25],"antenna":[30],"effect":[31],"coming":[32],"from":[33],"back-end":[35],"line":[37],"(BEOL)":[38],"or":[40],"etch":[41],"contribution":[42],"can":[43,82],"be":[44,83],"detected":[45],"through":[46],"demonstration":[48],"electrical":[50,96],"performance":[51,106],"sub-threshold":[53],"voltage,":[54],"interface-state":[55],"density,":[56],"and":[57,64,79],"leakage.":[59],"Adopting":[60],"capacitance-voltage":[62],"(C-V)":[63],"leakage":[66],"measurement,":[67],"dielectric":[73,91],"assistance":[76],"fringe":[78],"area":[80],"patterns":[81],"reflected.":[84],"This":[85],"study":[86],"mainly":[87],"focused":[88],"on":[89,92],"p-substrate":[93],"measurement.":[97],"Through":[98],"data":[100],"analysis,":[101],"we":[102],"also":[103],"performed":[104],"comparison":[107],"various":[109],"annealing":[110],"temperature":[111],"as":[112],"nitridation":[113],"treatment.":[114]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}