{"id":"https://openalex.org/W3013185139","doi":"https://doi.org/10.1109/ickii46306.2019.9042755","title":"A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile","display_name":"A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile","publication_year":2019,"publication_date":"2019-07-01","ids":{"openalex":"https://openalex.org/W3013185139","doi":"https://doi.org/10.1109/ickii46306.2019.9042755","mag":"3013185139"},"language":"en","primary_location":{"id":"doi:10.1109/ickii46306.2019.9042755","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ickii46306.2019.9042755","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100738455","display_name":"Hongxia Chen","orcid":"https://orcid.org/0000-0003-2400-9061"},"institutions":[{"id":"https://openalex.org/I161346416","display_name":"Jimei University","ror":"https://ror.org/03hknyb50","country_code":"CN","type":"education","lineage":["https://openalex.org/I161346416"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hongxia Chen","raw_affiliation_strings":["School of Information and Engineering, Jimei University,Fujian,China,361021","School of Information and Engineering, Jimei University, Fujian, China"],"affiliations":[{"raw_affiliation_string":"School of Information and Engineering, Jimei University,Fujian,China,361021","institution_ids":["https://openalex.org/I161346416"]},{"raw_affiliation_string":"School of Information and Engineering, Jimei University, Fujian, China","institution_ids":["https://openalex.org/I161346416"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025373365","display_name":"Sufen Wei","orcid":"https://orcid.org/0000-0002-1805-4475"},"institutions":[{"id":"https://openalex.org/I161346416","display_name":"Jimei University","ror":"https://ror.org/03hknyb50","country_code":"CN","type":"education","lineage":["https://openalex.org/I161346416"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Sufen Wei","raw_affiliation_strings":["School of Information and Engineering, Jimei University,Fujian,China,361021","School of Information and Engineering, Jimei University, Fujian, China"],"affiliations":[{"raw_affiliation_string":"School of Information and Engineering, Jimei University,Fujian,China,361021","institution_ids":["https://openalex.org/I161346416"]},{"raw_affiliation_string":"School of Information and Engineering, Jimei University, Fujian, China","institution_ids":["https://openalex.org/I161346416"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100374959","display_name":"Jing Liu","orcid":"https://orcid.org/0000-0002-0372-9177"},"institutions":[{"id":"https://openalex.org/I161346416","display_name":"Jimei University","ror":"https://ror.org/03hknyb50","country_code":"CN","type":"education","lineage":["https://openalex.org/I161346416"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jing Liu","raw_affiliation_strings":["School of Information and Engineering, Jimei University,Fujian,China,361021","School of Information and Engineering, Jimei University, Fujian, China"],"affiliations":[{"raw_affiliation_string":"School of Information and Engineering, Jimei University,Fujian,China,361021","institution_ids":["https://openalex.org/I161346416"]},{"raw_affiliation_string":"School of Information and Engineering, Jimei University, Fujian, China","institution_ids":["https://openalex.org/I161346416"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088739970","display_name":"Guohe Zhang","orcid":"https://orcid.org/0000-0001-8092-8009"},"institutions":[{"id":"https://openalex.org/I87445476","display_name":"Xi'an Jiaotong University","ror":"https://ror.org/017zhmm22","country_code":"CN","type":"education","lineage":["https://openalex.org/I87445476"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guohe Zhang","raw_affiliation_strings":["School of Microelectronics, Xi'an Jiaotong University,Shaanxi,China,710049","School of Microelectronics, Xi'an Jiaotong University, Shaanxi, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xi'an Jiaotong University,Shaanxi,China,710049","institution_ids":["https://openalex.org/I87445476"]},{"raw_affiliation_string":"School of Microelectronics, Xi'an Jiaotong University, Shaanxi, China","institution_ids":["https://openalex.org/I87445476"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055717634","display_name":"Cheng\u2010Fu Yang","orcid":"https://orcid.org/0000-0001-9167-2264"},"institutions":[{"id":"https://openalex.org/I192168892","display_name":"National University of Kaohsiung","ror":"https://ror.org/013zjb662","country_code":"TW","type":"education","lineage":["https://openalex.org/I192168892"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Cheng-Fu Yang","raw_affiliation_strings":["National University of Kaohsiung, No. 700, Kaohsiung University Rd.,Department of Chemical and Materials Engineering,Nan-Tzu District Kaohsiung,Taiwan,811","Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu District Kaohsiung, Taiwan"],"affiliations":[{"raw_affiliation_string":"National University of Kaohsiung, No. 700, Kaohsiung University Rd.,Department of Chemical and Materials Engineering,Nan-Tzu District Kaohsiung,Taiwan,811","institution_ids":["https://openalex.org/I192168892"]},{"raw_affiliation_string":"Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu District Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I192168892"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100738455"],"corresponding_institution_ids":["https://openalex.org/I161346416"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.17861457,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"89","last_page":"92"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.8453555107116699},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7048206925392151},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.6686157584190369},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6427912712097168},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5882847905158997},{"id":"https://openalex.org/keywords/gaussian","display_name":"Gaussian","score":0.5617945194244385},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5539250373840332},{"id":"https://openalex.org/keywords/poissons-equation","display_name":"Poisson's equation","score":0.5125979781150818},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.484123557806015},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4609878659248352},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4061579406261444},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38317281007766724},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24488797783851624},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23855087161064148},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19661355018615723},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.157731831073761},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.135267436504364}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.8453555107116699},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7048206925392151},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6686157584190369},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6427912712097168},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5882847905158997},{"id":"https://openalex.org/C163716315","wikidata":"https://www.wikidata.org/wiki/Q901177","display_name":"Gaussian","level":2,"score":0.5617945194244385},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5539250373840332},{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.5125979781150818},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.484123557806015},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4609878659248352},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4061579406261444},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38317281007766724},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24488797783851624},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23855087161064148},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19661355018615723},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.157731831073761},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.135267436504364},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ickii46306.2019.9042755","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ickii46306.2019.9042755","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W336005072","https://openalex.org/W1527042331","https://openalex.org/W1984586215","https://openalex.org/W2003024094","https://openalex.org/W2017895461","https://openalex.org/W2020934135","https://openalex.org/W2126174276","https://openalex.org/W2135232328","https://openalex.org/W2153770261","https://openalex.org/W2154347793","https://openalex.org/W2158161062","https://openalex.org/W2519232442","https://openalex.org/W2549898502","https://openalex.org/W4376577247"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2765340795","https://openalex.org/W2545707786","https://openalex.org/W2133198051","https://openalex.org/W2473578222"],"abstract_inverted_index":{"An":[0],"insightful":[1],"study":[2],"of":[3,37,48,133],"the":[4,10,24,43,49,68,72,84,100],"virtual":[5],"cathode":[6],"is":[7,30,109],"performed":[8],"for":[9],"nanoscale":[11],"ultra-thin":[12,14],"body":[13],"box":[15],"SOI":[16],"MOSFETs":[17],"with":[18,42,104],"a":[19,105],"vertical":[20],"Gaussian":[21],"doping.":[22],"And":[23],"physical,":[25],"compact":[26],"threshold":[27,73],"voltage":[28,74],"model":[29,50],"derived":[31],"based":[32,136],"on":[33],"an":[34],"analytical":[35],"solution":[36],"two-dimensional":[38],"(2D)":[39],"Poisson":[40],"equation":[41],"evanescent-mode":[44],"analysis.":[45],"The":[46],"accuracy":[47],"has":[51,117],"been":[52,89],"verified":[53],"by":[54],"2D":[55],"numerical":[56],"device":[57],"simulations":[58],"using":[59],"Sentaurus":[60],"Technology":[61],"Computer-Aided":[62],"Design":[63],"(TCAD)":[64],"from":[65],"Synopsys.":[66],"Applying":[67],"newly":[69],"developed":[70],"model,":[71],"sensitivities":[75],"to":[76],"channel":[77,85],"length,":[78],"silicon-film":[79],"thickness,":[80,82],"buried-oxide":[81],"and":[83,120,123,131],"doping":[86,107],"concentration":[87],"have":[88],"comprehensively":[90],"investigated.":[91],"Good":[92],"agreements":[93],"are":[94],"achieved.":[95],"Model":[96],"predictions":[97],"indicate":[98],"that":[99],"individual":[101],"UTBB-SOI":[102,135],"MOSFET":[103],"non-uniform":[106],"profile":[108],"feasible":[110],"at":[111],"10":[112],"nm":[113],"scale.":[114],"This":[115],"work":[116],"both":[118],"theoretical":[119,128],"practical":[121],"significance":[122],"provide":[124],"aids":[125],"in":[126],"promoting":[127],"modeling":[129],"research":[130],"applications":[132],"new":[134],"devices.":[137]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}