{"id":"https://openalex.org/W1606456746","doi":"https://doi.org/10.1109/icit.2015.7125514","title":"The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE","display_name":"The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE","publication_year":2015,"publication_date":"2015-03-01","ids":{"openalex":"https://openalex.org/W1606456746","doi":"https://doi.org/10.1109/icit.2015.7125514","mag":"1606456746"},"language":"en","primary_location":{"id":"doi:10.1109/icit.2015.7125514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icit.2015.7125514","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Industrial Technology (ICIT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022727369","display_name":"Abderrazak Lakrim","orcid":"https://orcid.org/0000-0002-7892-484X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Abderrazak Lakrim","raw_affiliation_strings":["EMC and Power Electronic Systems Team, Signals Systems and Components Laboratory (SSCL), Fez, Morocco","Signals, Systems and Components Laboratory (SSCL), EMC and Power Electronic Systems Team, Faculty of Sciences and Technologies, BP.2202 Fez, Morocco"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EMC and Power Electronic Systems Team, Signals Systems and Components Laboratory (SSCL), Fez, Morocco","institution_ids":[]},{"raw_affiliation_string":"Signals, Systems and Components Laboratory (SSCL), EMC and Power Electronic Systems Team, Faculty of Sciences and Technologies, BP.2202 Fez, Morocco","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5018606291","display_name":"Driss Tahri","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Driss Tahri","raw_affiliation_strings":["EMC and Power Electronic Systems Team, Signals Systems and Components Laboratory (SSCL), Fez, Morocco","Signals, Systems and Components Laboratory (SSCL), EMC and Power Electronic Systems Team, Faculty of Sciences and Technologies, BP.2202 Fez, Morocco"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EMC and Power Electronic Systems Team, Signals Systems and Components Laboratory (SSCL), Fez, Morocco","institution_ids":[]},{"raw_affiliation_string":"Signals, Systems and Components Laboratory (SSCL), EMC and Power Electronic Systems Team, Faculty of Sciences and Technologies, BP.2202 Fez, Morocco","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4017,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.66107298,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"17","issue":null,"first_page":"2818","last_page":"2823"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.8590887784957886},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7190597057342529},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.558235764503479},{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.4911298453807831},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.4901319444179535},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4197058081626892},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41656485199928284},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4092809855937958},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39216452836990356},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3840617537498474},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.35815903544425964},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.33895182609558105},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2671474516391754},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1557578444480896}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.8590887784957886},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7190597057342529},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.558235764503479},{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.4911298453807831},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.4901319444179535},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4197058081626892},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41656485199928284},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4092809855937958},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39216452836990356},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3840617537498474},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.35815903544425964},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.33895182609558105},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2671474516391754},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1557578444480896},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icit.2015.7125514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icit.2015.7125514","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Industrial Technology (ICIT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5699999928474426,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W266434706","https://openalex.org/W629861200","https://openalex.org/W1505905221","https://openalex.org/W1651707596","https://openalex.org/W2024147796","https://openalex.org/W2052359314","https://openalex.org/W2082546341","https://openalex.org/W2097550317","https://openalex.org/W2111607259","https://openalex.org/W2112774088","https://openalex.org/W2140415360","https://openalex.org/W2141860006","https://openalex.org/W2142750624","https://openalex.org/W2164408234","https://openalex.org/W2490890137","https://openalex.org/W2543591532","https://openalex.org/W2556915247","https://openalex.org/W2785511433","https://openalex.org/W4285719527","https://openalex.org/W6609947873","https://openalex.org/W6630437809","https://openalex.org/W6676799975","https://openalex.org/W6681122398","https://openalex.org/W7033653296"],"related_works":["https://openalex.org/W4200599242","https://openalex.org/W2161704569","https://openalex.org/W3020464555","https://openalex.org/W2031212063","https://openalex.org/W2372048540","https://openalex.org/W2118273689","https://openalex.org/W2368486130","https://openalex.org/W2110367235","https://openalex.org/W1608616540","https://openalex.org/W2799073410"],"abstract_inverted_index":{"This":[0,22,85,164],"paper":[1],"presents":[2],"a":[3],"new":[4],"behavioural":[5,76],"electrothermal":[6],"model":[7,23,29,89,117,138,165,180],"of":[8,82,106,114,131,154,177],"power":[9,121],"Silicon":[10],"Carbide":[11],"(SiC)":[12],"Metal":[13],"Oxide":[14],"Semiconductor":[15],"Field":[16],"Effect":[17],"Transistor":[18],"(MOSFET)":[19],"under":[20],"SPICE.":[21],"is":[24,109],"based":[25],"on":[26,111],"the":[27,61,97,107,112,115,119,129,132,152,169,178],"MOSFET":[28,197],"level":[30],"1of":[31],"SPICE,":[32],"in":[33,128],"which":[34],"phenomena":[35,172],"such":[36],"as":[37,189,191],"Drain":[38],"Leakage":[39],"Current":[40],"I":[41],"<sub":[42,49,57],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[43,50,58],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DSS</sub>":[44],",":[45,52,60],"On-State":[46],"Resistance":[47],"R":[48],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DSon</sub>":[51],"gate":[53],"Threshold":[54],"voltage":[55],"V":[56],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GSth</sub>":[59],"transconductance":[62],"(gfs),":[63],"I-V":[64],"Characteristics":[65],"Body":[66],"diode,":[67],"temperature-dependent":[68],"and":[69,73,91,124,159,188],"self-heating":[70],"are":[71,140],"included":[72],"represented":[74],"using":[75,148],"blocks":[77],"ABM":[78],"(Analog":[79],"Behavioural":[80],"Models)":[81],"Spice":[83,185],"library.":[84],"ultimately":[86],"makes":[87],"this":[88],"flexible":[90],"easily":[92],"can":[93],"be":[94],"integrated":[95],"into":[96,167],"various":[98,170],"Spice-based":[99],"simulation":[100,186],"softwares.":[101],"The":[102,137,175],"internal":[103],"junction":[104],"temperature":[105],"component":[108],"calculated":[110],"basis":[113],"thermal":[116,126],"through":[118],"electric":[120],"dissipated":[122],"inside":[123],"its":[125],"impedance":[127],"form":[130],"localized":[133],"Foster":[134],"canonical":[135],"network.":[136],"parameters":[139],"extracted":[141],"from":[142],"manufacturers'":[143],"data":[144,146,193],"(curves":[145],"sheets)":[147],"polynomial":[149],"interpolation":[150],"with":[151],"method":[153],"simulated":[155],"annealing":[156],"(S":[157],"A)":[158],"weighted":[160],"least":[161],"squares":[162],"(WLS).":[163],"takes":[166],"account":[168],"important":[171],"within":[173],"transistor.":[174],"effectiveness":[176],"presented":[179],"has":[181],"been":[182],"verified":[183],"by":[184,192],"results":[187],"well":[190],"measurement":[194],"for":[195],"SiC":[196],"transistor":[198],"C2M0025120D":[199],"CREE":[200],"(1200V,":[201],"90A).":[202]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}