{"id":"https://openalex.org/W4389388585","doi":"https://doi.org/10.1109/icicdt59917.2023.10332378","title":"Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise","display_name":"Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise","publication_year":2023,"publication_date":"2023-09-25","ids":{"openalex":"https://openalex.org/W4389388585","doi":"https://doi.org/10.1109/icicdt59917.2023.10332378"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt59917.2023.10332378","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icicdt59917.2023.10332378","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100620236","display_name":"Yi Jiang","orcid":"https://orcid.org/0000-0002-6618-5437"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi Jiang","raw_affiliation_strings":["Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078633528","display_name":"Yanning Chen","orcid":"https://orcid.org/0000-0002-1337-9668"},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanning Chen","raw_affiliation_strings":["Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074710777","display_name":"Fang Liu","orcid":"https://orcid.org/0000-0002-0272-1181"},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fang Liu","raw_affiliation_strings":["Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111033324","display_name":"Bo Wu","orcid":"https://orcid.org/0009-0008-1130-0953"},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Wu","raw_affiliation_strings":["Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109847779","display_name":"Yongfeng Deng","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yongfeng Deng","raw_affiliation_strings":["Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Smartchip Microelectronics Technology Co., Ltd,Beijing,China,100000","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005628536","display_name":"Junkang Li","orcid":"https://orcid.org/0000-0003-3812-3842"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junkang Li","raw_affiliation_strings":["Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031752129","display_name":"Dawei Gao","orcid":"https://orcid.org/0009-0002-7786-1506"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dawei Gao","raw_affiliation_strings":["Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100422057","display_name":"Rui Zhang","orcid":"https://orcid.org/0000-0002-5433-7616"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rui Zhang","raw_affiliation_strings":["Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14796893,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"120","last_page":"123"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7193362712860107},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6721341609954834},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6716859340667725},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6568930149078369},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5769498348236084},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5497565269470215},{"id":"https://openalex.org/keywords/infrasound","display_name":"Infrasound","score":0.47853216528892517},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4595048129558563},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.41058433055877686},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39383798837661743},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28954726457595825},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20388811826705933},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.1780456304550171},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13892167806625366},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13168880343437195},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.13024738430976868}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7193362712860107},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6721341609954834},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6716859340667725},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6568930149078369},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5769498348236084},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5497565269470215},{"id":"https://openalex.org/C207240575","wikidata":"https://www.wikidata.org/wiki/Q212082","display_name":"Infrasound","level":2,"score":0.47853216528892517},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4595048129558563},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.41058433055877686},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39383798837661743},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28954726457595825},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20388811826705933},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1780456304550171},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13892167806625366},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13168880343437195},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.13024738430976868},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt59917.2023.10332378","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icicdt59917.2023.10332378","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320329861","display_name":"Natural Science Foundation of Sichuan Province","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1529803699","https://openalex.org/W1977119169","https://openalex.org/W2012655171","https://openalex.org/W2030200346","https://openalex.org/W2041424982","https://openalex.org/W2047993927","https://openalex.org/W2065112062","https://openalex.org/W2142423888","https://openalex.org/W2166143506","https://openalex.org/W2820381790","https://openalex.org/W2941244875","https://openalex.org/W3014793208","https://openalex.org/W3033554385"],"related_works":["https://openalex.org/W2695582473","https://openalex.org/W2975489134","https://openalex.org/W2026941555","https://openalex.org/W2095193959","https://openalex.org/W202152615","https://openalex.org/W2368066921","https://openalex.org/W2352885854","https://openalex.org/W2365204855","https://openalex.org/W2167195438","https://openalex.org/W2843479960"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3,55,83],"have":[4],"systematically":[5],"and":[6,49,98],"quantitatively":[7],"examined":[8],"the":[9,57,70,86],"Negative":[10],"Bias":[11],"Temperature":[12],"Instability":[13],"(NBTI)":[14],"degradation":[15,75,92],"versus":[16],"stress":[17,64],"time":[18],"$\\left(T_{s}\\right)$":[19],"for":[20,60],"Si":[21],"pMOSFET":[22],"at":[23,77],"55":[24],"nm":[25],"technology":[26],"node,":[27],"in":[28,42],"terms":[29],"of,":[30],"$\\Delta":[31,37],"V_{t":[32],"h},":[33],"\\Delta":[34],"S":[35],"S$,":[36],"G":[38],"m_{max":[39],"}$,":[40],"current":[41],"liner":[43],"region":[44],"$\\left(I_{d":[45],"l":[46],"i":[47],"n}\\right)$":[48],"low-frequency":[50],"$(1/f)$":[51],"noise":[52,90],"degradation,":[53],"while":[54],"investigate":[56],"lifetime":[58,72],"prediction":[59,87],"device":[61],"during":[62],"NBTI":[63],"according":[65],"above":[66],"five":[67],"parameters.":[68],"Comparing":[69],"predicted":[71],"based":[73],"on":[74],"model":[76],"different":[78],"$T_{s}$":[79],"with":[80],"reference":[81],"lifetime,":[82],"find":[84],"that":[85],"through":[88],"$1/f$":[89],"performance":[91],"is":[93],"fastest":[94],"(only":[95],"50":[96],"s)":[97],"most":[99],"accurate.":[100]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}