{"id":"https://openalex.org/W4389372623","doi":"https://doi.org/10.1109/icicdt59917.2023.10332333","title":"Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters","display_name":"Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters","publication_year":2023,"publication_date":"2023-09-25","ids":{"openalex":"https://openalex.org/W4389372623","doi":"https://doi.org/10.1109/icicdt59917.2023.10332333"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt59917.2023.10332333","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icicdt59917.2023.10332333","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113787512","display_name":"Junzhe Tan","orcid":"https://orcid.org/0009-0008-5902-4337"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junzhe Tan","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068950450","display_name":"Dongyi Yang","orcid":"https://orcid.org/0009-0007-6432-9613"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongyi Yang","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641395","display_name":"Shiqiang Wu","orcid":"https://orcid.org/0009-0009-4560-4864"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shiqiang Wu","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026903054","display_name":"Yuhao Zhu","orcid":"https://orcid.org/0000-0003-2764-3877"},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]},{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN","GB"],"is_corresponding":false,"raw_author_name":"Yuhao Zhu","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK","institution_ids":["https://openalex.org/I146655781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113063935","display_name":"Yaoyao Pan","orcid":null},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yaoyao Pan","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039439674","display_name":"Pengju Cui","orcid":"https://orcid.org/0009-0002-8112-2095"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Pengju Cui","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100320264","display_name":"Wen Liu","orcid":"https://orcid.org/0000-0002-2212-1861"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wen Liu","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China.,215123","institution_ids":["https://openalex.org/I69356397"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10183533,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"52","last_page":"56"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7163474559783936},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6692115664482117},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5838550925254822},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5043338537216187},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4871339499950409},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.48656025528907776},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4781945049762726},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4652121365070343},{"id":"https://openalex.org/keywords/pulse-width-modulation","display_name":"Pulse-width modulation","score":0.4502217769622803},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4435180425643921},{"id":"https://openalex.org/keywords/sawtooth-wave","display_name":"Sawtooth wave","score":0.4432607889175415},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4395594000816345},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4236927330493927},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3773699104785919},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27785229682922363},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.0895395278930664}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7163474559783936},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6692115664482117},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5838550925254822},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5043338537216187},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4871339499950409},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.48656025528907776},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4781945049762726},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4652121365070343},{"id":"https://openalex.org/C92746544","wikidata":"https://www.wikidata.org/wiki/Q585184","display_name":"Pulse-width modulation","level":3,"score":0.4502217769622803},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4435180425643921},{"id":"https://openalex.org/C148837635","wikidata":"https://www.wikidata.org/wiki/Q1742397","display_name":"Sawtooth wave","level":2,"score":0.4432607889175415},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4395594000816345},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4236927330493927},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3773699104785919},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27785229682922363},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0895395278930664},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt59917.2023.10332333","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icicdt59917.2023.10332333","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/13","score":0.44999998807907104,"display_name":"Climate action"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1975719088","https://openalex.org/W2050245639","https://openalex.org/W2050720862","https://openalex.org/W2052140346","https://openalex.org/W2070906503","https://openalex.org/W2072541559","https://openalex.org/W2075997516","https://openalex.org/W2134165364","https://openalex.org/W2143132086","https://openalex.org/W2171382853","https://openalex.org/W2461874365","https://openalex.org/W2508858054","https://openalex.org/W2593495332","https://openalex.org/W2738121890","https://openalex.org/W2786287848","https://openalex.org/W2923195585","https://openalex.org/W2968689574","https://openalex.org/W3159541847","https://openalex.org/W3215042581","https://openalex.org/W4200436456","https://openalex.org/W4200494268","https://openalex.org/W4205089454","https://openalex.org/W4207024983","https://openalex.org/W4312558194","https://openalex.org/W4360832150"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W4388207625","https://openalex.org/W1975307200","https://openalex.org/W2354452957","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4313611767"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"two":[3],"step-down":[4,119],"level":[5,18,120],"shifter":[6,19,121],"circuit":[7,67,95,103,122],"structures":[8,68,104,123],"based":[9],"on":[10],"AlGaN/GaN":[11],"(aluminum-gallium-nitride/gallium-nitride)":[12],"MIS-HEMTs":[13],"(metal-insulator-semiconductor-high-electron-mobility-transistors)":[14],"are":[15,29,69,82,105],"proposed.":[16],"The":[17],"circuits":[20],"have":[21],"the":[22,33,40,54,64,74,87,94,116],"capability":[23],"to":[24,31,85],"produce":[25],"voltage":[26,62,91],"drop.":[27,92],"They":[28],"used":[30],"address":[32],"challenges":[34],"of":[35,44,89,101,118],"anomalous":[36],"operation":[37],"state":[38],"in":[39],"sawtooth":[41],"wave":[42],"generator":[43],"PWM":[45],"(pulse":[46],"width":[47],"modulation)":[48],"integrated":[49,126],"circuit,":[50],"while":[51],"also":[52],"mitigating":[53],"undesirable":[55],"device":[56],"degradation":[57],"resulting":[58],"from":[59,63],"high":[60],"output":[61,90,96],"comparator.":[65],"Proposed":[66],"simulated":[70],"and":[71,98,110,115],"calibrated":[72],"by":[73],"ADS":[75],"(Advanced":[76],"Design":[77],"System)":[78],"platform.":[79],"Additionally,":[80],"calculations":[81],"carried":[83],"out":[84],"analyze":[86],"principle":[88],"Subsequently,":[93],"characteristics":[97],"parameter":[99],"settings":[100],"these":[102],"discussed,":[106],"which":[107],"offer":[108],"insights":[109],"advice":[111],"regarding":[112],"their":[113],"feasibility":[114],"potential":[117],"for":[124],"monolithically":[125],"GaN":[127],"power":[128],"converters.":[129]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}