{"id":"https://openalex.org/W4389401170","doi":"https://doi.org/10.1109/icicdt59917.2023.10332310","title":"Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor","display_name":"Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor","publication_year":2023,"publication_date":"2023-09-25","ids":{"openalex":"https://openalex.org/W4389401170","doi":"https://doi.org/10.1109/icicdt59917.2023.10332310"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt59917.2023.10332310","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt59917.2023.10332310","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100580600","display_name":"Roupu Zhu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089981","display_name":"ON Semiconductor (China)","ror":"https://ror.org/00b285s97","country_code":"CN","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210089981"]},{"id":"https://openalex.org/I4210148088","display_name":"Dynavax Technologies (Germany)","ror":"https://ror.org/04pc85e11","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210104449","https://openalex.org/I4210148088"]},{"id":"https://openalex.org/I4210151518","display_name":"Nanopolis Suzhou (China)","ror":"https://ror.org/04t8pft48","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210151518"]}],"countries":["CN","DE"],"is_corresponding":false,"raw_author_name":"Roupu Zhu","raw_affiliation_strings":["Dynax Semiconductor Inc.,Suzhou,China","Dynax Semiconductor Inc., Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dynax Semiconductor Inc.,Suzhou,China","institution_ids":["https://openalex.org/I4210089981","https://openalex.org/I4210151518","https://openalex.org/I4210148088"]},{"raw_affiliation_string":"Dynax Semiconductor Inc., Suzhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100319568","display_name":"Chengwei Liu","orcid":"https://orcid.org/0000-0003-2746-2080"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chengwei Liu","raw_affiliation_strings":["Xi’an Gaoxin No.1 High School,Xi’an,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Gaoxin No.1 High School,Xi’an,China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026903054","display_name":"Yuhao Zhu","orcid":"https://orcid.org/0000-0003-2764-3877"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuhao Zhu","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100320264","display_name":"Wen Liu","orcid":"https://orcid.org/0000-0002-2212-1861"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wen Liu","raw_affiliation_strings":["Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101626665","display_name":"Yi Pei","orcid":"https://orcid.org/0000-0002-6547-8721"},"institutions":[{"id":"https://openalex.org/I4210089981","display_name":"ON Semiconductor (China)","ror":"https://ror.org/00b285s97","country_code":"CN","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210089981"]},{"id":"https://openalex.org/I4210148088","display_name":"Dynavax Technologies (Germany)","ror":"https://ror.org/04pc85e11","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210104449","https://openalex.org/I4210148088"]},{"id":"https://openalex.org/I4210151518","display_name":"Nanopolis Suzhou (China)","ror":"https://ror.org/04t8pft48","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210151518"]}],"countries":["CN","DE"],"is_corresponding":false,"raw_author_name":"Yi Pei","raw_affiliation_strings":["Dynax Semiconductor Inc.,Suzhou,China","Dynax Semiconductor Inc., Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dynax Semiconductor Inc.,Suzhou,China","institution_ids":["https://openalex.org/I4210089981","https://openalex.org/I4210151518","https://openalex.org/I4210148088"]},{"raw_affiliation_string":"Dynax Semiconductor Inc., Suzhou, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031933412","display_name":"Man Hoi Wong","orcid":"https://orcid.org/0000-0002-0908-4509"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]},{"id":"https://openalex.org/I889458895","display_name":"University of Hong Kong","ror":"https://ror.org/02zhqgq86","country_code":"HK","type":"education","lineage":["https://openalex.org/I889458895"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Man Hoi Wong","raw_affiliation_strings":["Hong Kong University of Science and Technology,Electronic and Computer Engineering,Clear Water Bay,Hong Kong","Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hong Kong University of Science and Technology,Electronic and Computer Engineering,Clear Water Bay,Hong Kong","institution_ids":["https://openalex.org/I200769079","https://openalex.org/I889458895"]},{"raw_affiliation_string":"Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0746,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.2943298,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"156","last_page":"158"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9527000188827515,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9334999918937683,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.8520146608352661},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7195418477058411},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.6771036386489868},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.6378467082977295},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.5234898328781128},{"id":"https://openalex.org/keywords/discrete-circuit","display_name":"Discrete circuit","score":0.496216356754303},{"id":"https://openalex.org/keywords/electronic-circuit-simulation","display_name":"Electronic circuit simulation","score":0.48198240995407104},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.4558313488960266},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.44692936539649963},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4456178843975067},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.44402557611465454},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.42196837067604065},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.41406309604644775},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40321019291877747},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.38895753026008606},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35771915316581726},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.3262439966201782},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3082548975944519},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.20556458830833435},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1790362000465393},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17866656184196472}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.8520146608352661},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7195418477058411},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.6771036386489868},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.6378467082977295},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.5234898328781128},{"id":"https://openalex.org/C188058453","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Discrete circuit","level":4,"score":0.496216356754303},{"id":"https://openalex.org/C46205389","wikidata":"https://www.wikidata.org/wiki/Q1270401","display_name":"Electronic circuit simulation","level":3,"score":0.48198240995407104},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.4558313488960266},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.44692936539649963},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4456178843975067},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.44402557611465454},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.42196837067604065},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.41406309604644775},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40321019291877747},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.38895753026008606},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35771915316581726},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.3262439966201782},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3082548975944519},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.20556458830833435},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1790362000465393},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17866656184196472},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/icicdt59917.2023.10332310","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt59917.2023.10332310","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-131579","is_oa":false,"landing_page_url":"https://repository.hkust.edu.hk/ir/Record/1783.1-131579","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6800000071525574}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W158320764"],"related_works":["https://openalex.org/W2797744477","https://openalex.org/W2018560541","https://openalex.org/W3023960978","https://openalex.org/W1972185800","https://openalex.org/W3118612961","https://openalex.org/W2137147970","https://openalex.org/W2196564664","https://openalex.org/W2071006350","https://openalex.org/W2026914653","https://openalex.org/W4242623259"],"abstract_inverted_index":{"This":[0],"work":[1],"presents":[2],"an":[3],"analysis":[4,118],"of":[5,9,65,125],"the":[6,23,35,45,62,66,80,100,114,123],"high-frequency":[7,133],"behavior":[8,64],"$Ga_{2}O_{3}$":[10,126],"hot-electron":[11],"transistors":[12],"(HETs).":[13],"We":[14],"propose":[15],"a":[16,39,85,93],"small-signal":[17],"model":[18,71],"for":[19,22,132],"$Ga_{2}O_{3}":[20],"HET$":[21],"first":[24],"time.":[25],"The":[26,48,68,89,105,117],"developed":[27],"equivalent":[28,50],"circuit":[29,51,70],"can":[30],"be":[31],"easily":[32],"integrated":[33],"into":[34,122],"SPICE":[36],"program":[37],"providing":[38],"fast":[40],"simulation":[41],"result":[42],"compared":[43],"to":[44,60,111],"numerical":[46],"simulation.":[47],"proposed":[49,69],"includes":[52],"capacitances,":[53],"current":[54,102,115],"source,":[55],"RC-delay":[56],"circuit,":[57],"and":[58,79,129],"resistances":[59],"capture":[61],"intrinsic":[63],"transistor.":[67],"is":[72,97,108],"implemented":[73],"in":[74],"Advanced":[75],"Design":[76],"System":[77],"(ADS),":[78],"S-parameters":[81],"are":[82],"simulated":[83],"over":[84],"wide":[86],"frequency":[87,107],"range.":[88],"results":[90],"show":[91],"that":[92],"positive":[94],"power":[95],"gain":[96],"realized":[98],"as":[99],"collector":[101],"density":[103],"increases.":[104],"cut-off":[106],"also":[109],"found":[110],"increase":[112],"with":[113],"density.":[116],"provides":[119],"valuable":[120],"insights":[121],"performance":[124],"HET":[127],"s":[128],"their":[130],"potential":[131],"applications.":[134]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2023-12-07T00:00:00"}