{"id":"https://openalex.org/W4308273174","doi":"https://doi.org/10.1109/icicdt56182.2022.9933130","title":"Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO<sub>2</sub>-based Ge nMOSFETs with Interlayer Passivations","display_name":"Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO<sub>2</sub>-based Ge nMOSFETs with Interlayer Passivations","publication_year":2022,"publication_date":"2022-09-21","ids":{"openalex":"https://openalex.org/W4308273174","doi":"https://doi.org/10.1109/icicdt56182.2022.9933130"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt56182.2022.9933130","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt56182.2022.9933130","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016190587","display_name":"Lulu Chou","orcid":null},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Lulu Chou","raw_affiliation_strings":["Xidian University,School of Microelectronics,Xi&#x2019;an,China"],"affiliations":[{"raw_affiliation_string":"Xidian University,School of Microelectronics,Xi&#x2019;an,China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003619700","display_name":"Xiao Yu","orcid":"https://orcid.org/0000-0001-8769-521X"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiao Yu","raw_affiliation_strings":["Zhejiang Lab,Research Center for Intelligent Chips and Devices,Hangzhou,China","Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Zhejiang Lab,Research Center for Intelligent Chips and Devices,Hangzhou,China","institution_ids":["https://openalex.org/I4210123185"]},{"raw_affiliation_string":"Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100338912","display_name":"Huan Liu","orcid":"https://orcid.org/0000-0001-9316-4749"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huan Liu","raw_affiliation_strings":["Zhejiang Lab,Research Center for Intelligent Chips and Devices,Hangzhou,China","Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Zhejiang Lab,Research Center for Intelligent Chips and Devices,Hangzhou,China","institution_ids":["https://openalex.org/I4210123185"]},{"raw_affiliation_string":"Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100350984","display_name":"Yan Liu","orcid":"https://orcid.org/0000-0001-5583-0587"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Liu","raw_affiliation_strings":["Xidian University,School of Microelectronics,Xi&#x2019;an,China"],"affiliations":[{"raw_affiliation_string":"Xidian University,School of Microelectronics,Xi&#x2019;an,China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055388927","display_name":"Genquan Han","orcid":"https://orcid.org/0000-0001-5140-4150"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Genquan Han","raw_affiliation_strings":["Xidian University,School of Microelectronics,Xi&#x2019;an,China"],"affiliations":[{"raw_affiliation_string":"Xidian University,School of Microelectronics,Xi&#x2019;an,China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100427150","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0001-7876-8878"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["Xidian University,School of Microelectronics,Xi&#x2019;an,China"],"affiliations":[{"raw_affiliation_string":"Xidian University,School of Microelectronics,Xi&#x2019;an,China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5016190587"],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":null,"apc_paid":null,"fwci":0.0915,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.41158983,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"12","last_page":"15"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.47477054595947266},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.4131825566291809},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.364247590303421},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.35119307041168213},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21968114376068115},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18328508734703064},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11267068982124329},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.08950138092041016},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.0772886574268341}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.47477054595947266},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.4131825566291809},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.364247590303421},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35119307041168213},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21968114376068115},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18328508734703064},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11267068982124329},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.08950138092041016},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0772886574268341}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt56182.2022.9933130","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt56182.2022.9933130","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320337504","display_name":"Research and Development","ror":"https://ror.org/027s68j25"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2041601534","https://openalex.org/W2081704940","https://openalex.org/W2136376683","https://openalex.org/W2289042536","https://openalex.org/W2547320402","https://openalex.org/W2583652729","https://openalex.org/W2888013729","https://openalex.org/W2914091617","https://openalex.org/W3145569948","https://openalex.org/W4245954985","https://openalex.org/W6729537548","https://openalex.org/W6732269397"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W2893117232","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,47,62,66,70,77,83,92,100,125],"positive":[4],"bias":[5],"temperature":[6],"instability":[7],"(PBTI)":[8],"characteristics":[9],"of":[10,50,61,72],"ZrO":[11],"<inf":[12,34,42,85,94,107,111,115,127,141],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[13,35,43,86,95,108,112,116,128,142],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[14,87,109,129],"-based":[15],"Ge":[16],"n-channel":[17],"metal\u2013oxide\u2013semiconductor":[18],"field-effect":[19],"transistors":[20],"(nMOSFETs)":[21],"with":[22,99,105],"different":[23],"interlayer":[24],"(IL)":[25],"passivation":[26],"were":[27],"systematically":[28],"studied.":[29],"The":[30,59,103],"threshold":[31],"voltage":[32,135],"(V":[33],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH</inf>":[36],")":[37],"shift,":[38],"maximum":[39],"transconductance":[40],"(g":[41],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">max</inf>":[44,96],"),":[45],"and":[46,54,69,138],"trapping":[48],"behaviors":[49],"devices":[51],"after":[52],"stress":[53],"recovery":[55],"procedure":[56],"are":[57],"characterized.":[58],"generation":[60,74],"interfacial":[63],"state":[64],"dominates":[65],"PBTI":[67],"degradation,":[68],"location":[71],"trap":[73],"occurs":[75],"at":[76,82],"Ge/IL":[78],"interface":[79,88],"rather":[80],"than":[81],"IL/ZrO":[84],"only,":[89],"resulting":[90],"in":[91],"g":[93],"degradation":[97],"along":[98],"VTH":[101],"shift.":[102],"device":[104],"Al":[106],"O":[110],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[113],"/GeO":[114],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</inf>":[117],"IL":[118,130],"exhibits":[119],"higher":[120,134],"performance":[121],"on":[122],"mobility,":[123],"while":[124],"SiO":[126],"sample":[131],"has":[132],"a":[133,146],"acceleration":[136],"exponent(\u03b3),":[137],"larger":[139],"V":[140],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OV</inf>":[143],"for":[144],"achieving":[145],"10-year":[147],"lifetime.":[148]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}