{"id":"https://openalex.org/W4308279759","doi":"https://doi.org/10.1109/icicdt56182.2022.9933128","title":"TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs","display_name":"TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs","publication_year":2022,"publication_date":"2022-09-21","ids":{"openalex":"https://openalex.org/W4308279759","doi":"https://doi.org/10.1109/icicdt56182.2022.9933128"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt56182.2022.9933128","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt56182.2022.9933128","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100383178","display_name":"Yubo Wang","orcid":"https://orcid.org/0000-0001-5766-3751"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yubo Wang","raw_affiliation_strings":["Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100373596","display_name":"Fan Li","orcid":"https://orcid.org/0000-0003-0710-864X"},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]},{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN","GB"],"is_corresponding":false,"raw_author_name":"Fan Li","raw_affiliation_strings":["Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123","Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK","institution_ids":["https://openalex.org/I146655781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015423645","display_name":"Xuan Chi","orcid":null},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xuan Chi","raw_affiliation_strings":["Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100320264","display_name":"Wen Liu","orcid":"https://orcid.org/0000-0002-2212-1861"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wen Liu","raw_affiliation_strings":["Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi'an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100725924","display_name":"Guohao Yu","orcid":"https://orcid.org/0000-0002-6921-2728"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guohao Yu","raw_affiliation_strings":["University of Science and Technology of China,School of Nano-Tech and Nano-Bionics,Hefei,China,230026","Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, Jiangsu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Science and Technology of China,School of Nano-Tech and Nano-Bionics,Hefei,China,230026","institution_ids":["https://openalex.org/I126520041"]},{"raw_affiliation_string":"Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, Jiangsu, China","institution_ids":["https://openalex.org/I4210092495"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028444023","display_name":"Zhongkai Du","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhongkai Du","raw_affiliation_strings":["Suzhou Powerhouse Electronics Co., Ltd,Suzhou,China,215123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Suzhou Powerhouse Electronics Co., Ltd,Suzhou,China,215123","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109183930","display_name":"Baoshun Zhang","orcid":"https://orcid.org/0000-0002-7289-2883"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210092495","display_name":"Suzhou Institute of Nano-tech and Nano-bionics","ror":"https://ror.org/0027d9x02","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210092495"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Baoshun Zhang","raw_affiliation_strings":["University of Science and Technology of China,School of Nano-Tech and Nano-Bionics,Hefei,China,230026","Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, Jiangsu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Science and Technology of China,School of Nano-Tech and Nano-Bionics,Hefei,China,230026","institution_ids":["https://openalex.org/I126520041"]},{"raw_affiliation_string":"Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou, Jiangsu, China","institution_ids":["https://openalex.org/I4210092495"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2758,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.553916,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"57","last_page":"60"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.8204401135444641},{"id":"https://openalex.org/keywords/saturation-current","display_name":"Saturation current","score":0.776055097579956},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.7499338984489441},{"id":"https://openalex.org/keywords/acceptor","display_name":"Acceptor","score":0.7331746816635132},{"id":"https://openalex.org/keywords/activation-energy","display_name":"Activation energy","score":0.6209224462509155},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5241047143936157},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48708227276802063},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.4441164433956146},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.41802695393562317},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2829285264015198},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2508341073989868},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19184404611587524},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.17798364162445068},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16730448603630066},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.16529524326324463},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13530081510543823}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.8204401135444641},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.776055097579956},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.7499338984489441},{"id":"https://openalex.org/C2779892579","wikidata":"https://www.wikidata.org/wiki/Q912138","display_name":"Acceptor","level":2,"score":0.7331746816635132},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.6209224462509155},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5241047143936157},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48708227276802063},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4441164433956146},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.41802695393562317},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2829285264015198},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2508341073989868},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19184404611587524},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.17798364162445068},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16730448603630066},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.16529524326324463},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13530081510543823},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt56182.2022.9933128","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt56182.2022.9933128","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335892","display_name":"Youth Innovation Promotion Association","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1800838859","https://openalex.org/W1906886680","https://openalex.org/W1971583007","https://openalex.org/W2003757926","https://openalex.org/W2050050216","https://openalex.org/W2117563111","https://openalex.org/W2144618604","https://openalex.org/W2158892965","https://openalex.org/W2169301346","https://openalex.org/W2531804863","https://openalex.org/W2532492408","https://openalex.org/W2593495332","https://openalex.org/W2750608033","https://openalex.org/W6639750485"],"related_works":["https://openalex.org/W2262050257","https://openalex.org/W1975783833","https://openalex.org/W3213661739","https://openalex.org/W1599385332","https://openalex.org/W2032916116","https://openalex.org/W2009458363","https://openalex.org/W4292348179","https://openalex.org/W2164883553","https://openalex.org/W2576015233","https://openalex.org/W2131120754"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,6,21,26,53,56,62,73,79,90,97,111,120,123,127,133,141,148],"influence":[4],"of":[5,11,29,55,61,83,99,113,137,150],"energy":[7,59,82,112,136],"level":[8,60],"and":[9,38,44,58,81,110,135],"concentration":[10,57,80,100,134,153],"acceptor":[12,114],"or":[13],"donor":[14,39,84,138,151],"traps":[15,33,40],"which":[16],"could":[17],"be":[18],"introduced":[19],"in":[20,34,41,50,154],"plasma":[22],"passivation":[23],"process":[24],"on":[25],"saturation":[27,74,91,128,142],"current":[28,75,92,129,143],"etch-free":[30],"HEMTs.":[31],"Acceptor":[32],"passivated":[35,45,87,117],"pGaN":[36,43,71,88],"region,":[37,89],"SiNx/passivated":[42,70],"pGaN/AlGaN":[46,118],"interface":[47],"are":[48,67],"included":[49],"discussion.":[51],"By":[52],"variation":[54],"trap,":[63],"some":[64],"general":[65],"phenomena":[66],"discovered.":[68],"In":[69,86,116],"interface,":[72,119],"is":[76,122,130,144],"proportional":[77,131],"to":[78,96,132,147],"traps.":[85,115,139],"shows":[93],"negligible":[94],"variations":[95],"increase":[98],"under":[101],"1\u00d710":[102],"<sup":[103,107],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[104,108],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">18</sup>":[105],"cm":[106],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-3</sup>":[109],"trend":[121],"same":[124],"as":[125],"previous:":[126],"However,":[140],"more":[145],"sensitive":[146],"change":[149],"trap":[152],"this":[155],"interface.":[156]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}