{"id":"https://openalex.org/W2967675370","doi":"https://doi.org/10.1109/icicdt.2019.8790896","title":"Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs","display_name":"Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W2967675370","doi":"https://doi.org/10.1109/icicdt.2019.8790896","mag":"2967675370"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2019.8790896","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2019.8790896","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101992032","display_name":"Junfeng Wu","orcid":"https://orcid.org/0000-0001-7065-0584"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"JunFeng Wu","raw_affiliation_strings":["Gpower Semiconductor Inc., SuZhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Gpower Semiconductor Inc., SuZhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100732888","display_name":"Yongsheng Zhu","orcid":"https://orcid.org/0000-0002-1378-8939"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"YongSheng Zhu","raw_affiliation_strings":["Gpower Semiconductor Inc., SuZhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Gpower Semiconductor Inc., SuZhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031621411","display_name":"GuangMin Deng","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"GuangMin Deng","raw_affiliation_strings":["Gpower Semiconductor Inc., SuZhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Gpower Semiconductor Inc., SuZhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039578551","display_name":"ShuFeng Zhao","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"ShuFeng Zhao","raw_affiliation_strings":["Dynax Semiconductor Inc., SuZhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dynax Semiconductor Inc., SuZhou, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033604096","display_name":"Yi Pe","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yi Pe","raw_affiliation_strings":["Gpower Semiconductor Inc., SuZhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Gpower Semiconductor Inc., SuZhou, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.8964086174964905},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.853858232498169},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.8189331889152527},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6826611161231995},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.6636714935302734},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6344871520996094},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5413986444473267},{"id":"https://openalex.org/keywords/terminal","display_name":"Terminal (telecommunication)","score":0.5193970799446106},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48746800422668457},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.419930636882782},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3198562264442444},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.2536143660545349},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.18614980578422546},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1692783236503601},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16251367330551147},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.06826117634773254}],"concepts":[{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.8964086174964905},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.853858232498169},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.8189331889152527},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6826611161231995},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6636714935302734},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6344871520996094},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5413986444473267},{"id":"https://openalex.org/C2779664074","wikidata":"https://www.wikidata.org/wiki/Q3518405","display_name":"Terminal (telecommunication)","level":2,"score":0.5193970799446106},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48746800422668457},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.419930636882782},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3198562264442444},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2536143660545349},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.18614980578422546},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1692783236503601},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16251367330551147},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.06826117634773254},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2019.8790896","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2019.8790896","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.699999988079071,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1596117203","https://openalex.org/W2055105772","https://openalex.org/W2087465251","https://openalex.org/W2106755750","https://openalex.org/W2118243201","https://openalex.org/W2123617889","https://openalex.org/W2141981815","https://openalex.org/W2155947946","https://openalex.org/W2593495332","https://openalex.org/W2618878683"],"related_works":["https://openalex.org/W2115067661","https://openalex.org/W2160601779","https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W2570299670","https://openalex.org/W4388207625","https://openalex.org/W2123907965","https://openalex.org/W2466508933"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,28,33,36,40,45,50,53,57],"performance":[4],"of":[5,35,39,52,56],"high":[6],"voltage":[7],"Cascode":[8,58],"Gallium":[9],"Nitride":[10],"High":[11],"Electron":[12],"Mobility":[13],"Transistors":[14],"(GaN":[15],"HEMTs)":[16],"in":[17],"two":[18,29],"different":[19],"package":[20,30],"types":[21],"are":[22],"compared.":[23],"The":[24],"only":[25],"difference":[26],"between":[27],"structures":[31],"is":[32],"potential":[34,55],"substrate":[37],"terminal":[38],"GaN":[41,59],"HEMT":[42],"which":[43],"affects":[44],"dynamic":[46],"on-resistance":[47],"(Ron)":[48],"and":[49],"stability":[51],"midpoint":[54],"HEMT.":[60]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}