{"id":"https://openalex.org/W2968775035","doi":"https://doi.org/10.1109/icicdt.2019.8790894","title":"Leakage Current Analysis for Epitaxial Silicon Pulse Radiation Detector","display_name":"Leakage Current Analysis for Epitaxial Silicon Pulse Radiation Detector","publication_year":2019,"publication_date":"2019-06-01","ids":{"openalex":"https://openalex.org/W2968775035","doi":"https://doi.org/10.1109/icicdt.2019.8790894","mag":"2968775035"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2019.8790894","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2019.8790894","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100767138","display_name":"Jiale Liu","orcid":"https://orcid.org/0009-0007-7615-833X"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jiale Liu","raw_affiliation_strings":["National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109445227","display_name":"Min Yu","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Min Yu","raw_affiliation_strings":["National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101545455","display_name":"Xinyang Zhao","orcid":"https://orcid.org/0000-0003-3288-2573"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinyang Zhao","raw_affiliation_strings":["National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051676353","display_name":"Jingxi Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingxi Wang","raw_affiliation_strings":["National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Nano/Micro Fabrication Technology, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023700929","display_name":"Fangdong Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210096139","display_name":"China Institute of Atomic Energy","ror":"https://ror.org/00v5gqm66","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210096139"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fangdong Yang","raw_affiliation_strings":["China institute of atomic energy, Beijing, China"],"affiliations":[{"raw_affiliation_string":"China institute of atomic energy, Beijing, China","institution_ids":["https://openalex.org/I4210096139"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100767138"],"corresponding_institution_ids":["https://openalex.org/I20231570"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07391724,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"17","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7551463842391968},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7540483474731445},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.7494131326675415},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.7131396532058716},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5693263411521912},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5635062456130981},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.555860698223114},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.5485223531723022},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.46922263503074646},{"id":"https://openalex.org/keywords/particle-detector","display_name":"Particle detector","score":0.4195908308029175},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.3566490411758423},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10484465956687927},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10198163986206055}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7551463842391968},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7540483474731445},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7494131326675415},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7131396532058716},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5693263411521912},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5635062456130981},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.555860698223114},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.5485223531723022},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.46922263503074646},{"id":"https://openalex.org/C183680338","wikidata":"https://www.wikidata.org/wiki/Q736634","display_name":"Particle detector","level":3,"score":0.4195908308029175},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3566490411758423},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10484465956687927},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10198163986206055},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2019.8790894","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2019.8790894","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1978833776","https://openalex.org/W2025938402","https://openalex.org/W2082394640","https://openalex.org/W2095425889","https://openalex.org/W2098499895","https://openalex.org/W2537524920","https://openalex.org/W2606444834","https://openalex.org/W2743560941","https://openalex.org/W3102856442"],"related_works":["https://openalex.org/W1998662473","https://openalex.org/W2075391483","https://openalex.org/W2742348144","https://openalex.org/W2038820605","https://openalex.org/W1985417357","https://openalex.org/W2115053376","https://openalex.org/W2367528910","https://openalex.org/W1991489478","https://openalex.org/W2121416564","https://openalex.org/W1990495318"],"abstract_inverted_index":{"The":[0,10,77],"leakage":[1,47,90,107],"current":[2,12,91,108],"of":[3,44,89,117],"radiation":[4,16,95,109],"detectors":[5,99],"is":[6,21,37,52,81,112,120],"a":[7],"vital":[8],"parameter.":[9],"Leakage":[11],"analysis":[13,31],"for":[14,66,72,93,129],"pulse":[15,94,119,127],"detector":[17,111],"on":[18,32,102],"epitaxial":[19,67,103],"silicon":[20,35,75,104],"performed":[22],"by":[23,125],"using":[24,126],"the":[25,55,87],"gate-controlled":[26],"diodes.":[27],"As":[28],"comparison,":[29],"similar":[30],"300\u03bcm":[33,73],"thick":[34,74],"wafer":[36],"carried":[38],"out":[39],"as":[40],"well.":[41],"Comparable":[42],"level":[43],"surface":[45],"states":[46],"currents":[48],"are":[49],"achieved.":[50],"It":[51],"found":[53],"that":[54],"minority":[56],"carrier":[57],"lifetime":[58],"decreases":[59],"with":[60],"main":[61],"junction":[62],"reverse":[63],"bias":[64],"voltage":[65],"silicon,":[68],"however,":[69],"it":[70],"increases":[71],"wafer.":[76],"underlying":[78],"physical":[79],"reason":[80],"analyzed":[82],"in":[83],"this":[84],"work,":[85],"improving":[86],"understanding":[88],"mechanism":[92],"detectors.":[96],"Radiation":[97],"response":[98,110],"were":[100],"fabricated":[101],"wafers.":[105],"Low":[106],"achieved":[113],"and":[114],"rising":[115],"time":[116],"detected":[118],"measured":[121],"to":[122],"be":[123],"3.5ns":[124],"laser":[128],"detection":[130],"test.":[131]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}