{"id":"https://openalex.org/W2743381402","doi":"https://doi.org/10.1109/icicdt.2017.7993524","title":"Advances of the development of a ferroelectric field-effect transistor on Ge(001)","display_name":"Advances of the development of a ferroelectric field-effect transistor on Ge(001)","publication_year":2017,"publication_date":"2017-05-01","ids":{"openalex":"https://openalex.org/W2743381402","doi":"https://doi.org/10.1109/icicdt.2017.7993524","mag":"2743381402"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2017.7993524","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2017.7993524","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070786808","display_name":"Patrick Ponath","orcid":null},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Patrick Ponath","raw_affiliation_strings":["Physics Department, University of Texas at Austin, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038684343","display_name":"Agham Posadas","orcid":"https://orcid.org/0000-0002-5662-5582"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Agham B. Posadas","raw_affiliation_strings":["Physics Department, University of Texas at Austin, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052315641","display_name":"Yuan Ren","orcid":"https://orcid.org/0000-0003-0340-306X"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan Ren","raw_affiliation_strings":["Physics Department, University of Texas at Austin, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072059836","display_name":"Xiaoyu Wu","orcid":"https://orcid.org/0000-0002-9779-4171"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiaoyu Wu","raw_affiliation_strings":["Physics Department, University of Texas at Austin, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023788522","display_name":"Keji Lai","orcid":"https://orcid.org/0000-0002-4218-0201"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Keji Lai","raw_affiliation_strings":["Physics Department, University of Texas at Austin, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084717657","display_name":"Alex Demkov","orcid":null},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alex Demkov","raw_affiliation_strings":["Physics Department, University of Texas at Austin, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101835074","display_name":"Michael Schmidt","orcid":"https://orcid.org/0000-0002-5601-460X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Michael Schmidt","raw_affiliation_strings":["Tyndall National Institute, Cork, Ireland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tyndall National Institute, Cork, Ireland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081542068","display_name":"Ray Duffy","orcid":"https://orcid.org/0000-0002-6362-3489"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ray Duffy","raw_affiliation_strings":["Tyndall National Institute, Cork, Ireland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tyndall National Institute, Cork, Ireland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053550415","display_name":"Paul K. Hurley","orcid":"https://orcid.org/0000-0001-5137-721X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Paul Hurley","raw_affiliation_strings":["Tyndall National Institute, Cork, Ireland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tyndall National Institute, Cork, Ireland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100370337","display_name":"Jian Wang","orcid":"https://orcid.org/0000-0001-5629-6793"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jian Wang","raw_affiliation_strings":["Department of Materials Science & Engineering, University of Texas at Dallas, Richardson, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science & Engineering, University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007504207","display_name":"Chadwin D. Young","orcid":"https://orcid.org/0000-0003-0690-7423"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chadwin Young","raw_affiliation_strings":["Department of Materials Science & Engineering, University of Texas at Dallas, Richardson, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science & Engineering, University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001834469","display_name":"Rama K. Vasudevan","orcid":"https://orcid.org/0000-0003-4692-8579"},"institutions":[{"id":"https://openalex.org/I1289243028","display_name":"Oak Ridge National Laboratory","ror":"https://ror.org/01qz5mb56","country_code":"US","type":"facility","lineage":["https://openalex.org/I1289243028","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I4210159294"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rama K. Vasudevan","raw_affiliation_strings":["Oak Ridge National Laboratory, Oak Ridge, TN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oak Ridge National Laboratory, Oak Ridge, TN, USA","institution_ids":["https://openalex.org/I1289243028"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029710122","display_name":"M. Baris Okatan","orcid":"https://orcid.org/0000-0002-9421-7846"},"institutions":[{"id":"https://openalex.org/I1289243028","display_name":"Oak Ridge National Laboratory","ror":"https://ror.org/01qz5mb56","country_code":"US","type":"facility","lineage":["https://openalex.org/I1289243028","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I4210159294"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Baris Okatan","raw_affiliation_strings":["Oak Ridge National Laboratory, Oak Ridge, TN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oak Ridge National Laboratory, Oak Ridge, TN, USA","institution_ids":["https://openalex.org/I1289243028"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084949021","display_name":"Stephen Jesse","orcid":"https://orcid.org/0000-0002-1168-8483"},"institutions":[{"id":"https://openalex.org/I1289243028","display_name":"Oak Ridge National Laboratory","ror":"https://ror.org/01qz5mb56","country_code":"US","type":"facility","lineage":["https://openalex.org/I1289243028","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I4210159294"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Jesse","raw_affiliation_strings":["Oak Ridge National Laboratory, Oak Ridge, TN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oak Ridge National Laboratory, Oak Ridge, TN, USA","institution_ids":["https://openalex.org/I1289243028"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5048552375","display_name":"Sergei V. Kalinin","orcid":"https://orcid.org/0000-0001-5354-6152"},"institutions":[{"id":"https://openalex.org/I1289243028","display_name":"Oak Ridge National Laboratory","ror":"https://ror.org/01qz5mb56","country_code":"US","type":"facility","lineage":["https://openalex.org/I1289243028","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I4210159294"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sergei V. Kalinin","raw_affiliation_strings":["Oak Ridge National Laboratory, Oak Ridge, TN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oak Ridge National Laboratory, Oak Ridge, TN, USA","institution_ids":["https://openalex.org/I1289243028"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":15,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1462,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.51352972,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7908836603164673},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6030611991882324},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5997012853622437},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5808415412902832},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46845173835754395},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.402218759059906},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3315180242061615},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2476363480091095},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.18818539381027222},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1581135094165802}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7908836603164673},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6030611991882324},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5997012853622437},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5808415412902832},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46845173835754395},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.402218759059906},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3315180242061615},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2476363480091095},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.18818539381027222},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1581135094165802}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2017.7993524","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2017.7993524","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320338279","display_name":"Air Force Office of Scientific Research","ror":"https://ror.org/011e9bt93"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1967512017","https://openalex.org/W1969261628","https://openalex.org/W1993717184","https://openalex.org/W2037233425"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2795319754","https://openalex.org/W2248971758","https://openalex.org/W2332612935","https://openalex.org/W1963822728","https://openalex.org/W2034643761","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"Here":[0],"we":[1],"report":[2],"the":[3,7,19,25,29],"recent":[4],"advances":[5],"towards":[6],"ferroelectric":[8,26],"field-effect":[9],"on":[10,36],"Ge(001).":[11],"We":[12],"will":[13,55],"demonstrate":[14],"carrier":[15],"density":[16],"modulation":[17],"in":[18,28],"underlying":[20],"Ge(001)":[21],"substrate":[22],"by":[23],"switching":[24],"polarization":[27],"epitaxial":[30],"c-axis-oriented":[31],"BaTiO":[32,42],"<sub":[33,43],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[34,44],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[35,45],"Ge.":[37],"Recent":[38],"results":[39],"of":[40,52],"patterning":[41],"for":[46],"device":[47],"applications":[48],"and":[49],"electrical":[50],"properties":[51],"Pt/BTO/Ge":[53],"heterostructures":[54],"be":[56],"addressed.":[57]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}