{"id":"https://openalex.org/W2744343263","doi":"https://doi.org/10.1109/icicdt.2017.7993513","title":"FDSOI vs FinFET: differentiating device features for ultra low power &amp; IoT applications","display_name":"FDSOI vs FinFET: differentiating device features for ultra low power &amp; IoT applications","publication_year":2017,"publication_date":"2017-05-01","ids":{"openalex":"https://openalex.org/W2744343263","doi":"https://doi.org/10.1109/icicdt.2017.7993513","mag":"2744343263"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2017.7993513","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2017.7993513","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108646101","display_name":"O. Weber","orcid":null},"institutions":[{"id":"https://openalex.org/I106785703","display_name":"Institut polytechnique de Grenoble","ror":"https://ror.org/05sbt2524","country_code":"FR","type":"education","lineage":["https://openalex.org/I106785703","https://openalex.org/I899635006"]},{"id":"https://openalex.org/I899635006","display_name":"Universit\u00e9 Grenoble Alpes","ror":"https://ror.org/02rx3b187","country_code":"FR","type":"education","lineage":["https://openalex.org/I899635006"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"O. Weber","raw_affiliation_strings":["CEA-Leti, MINATEC Campus, Grenoble, France","STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"CEA-Leti, MINATEC Campus, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I899635006","https://openalex.org/I106785703","https://openalex.org/I2738703131"]},{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5108646101"],"corresponding_institution_ids":["https://openalex.org/I106785703","https://openalex.org/I2738703131","https://openalex.org/I4210104693","https://openalex.org/I4210150049","https://openalex.org/I899635006"],"apc_list":null,"apc_paid":null,"fwci":0.7167,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.72986893,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.5887840390205383},{"id":"https://openalex.org/keywords/ultra-low-power","display_name":"Ultra low power","score":0.5757720470428467},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5742201209068298},{"id":"https://openalex.org/keywords/internet-of-things","display_name":"Internet of Things","score":0.5441019535064697},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.5431494116783142},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5266052484512329},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4778815805912018},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.42897123098373413},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.41896945238113403},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41807079315185547},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.413131445646286},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2681680917739868},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.20368525385856628},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.12906593084335327},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09717196226119995}],"concepts":[{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.5887840390205383},{"id":"https://openalex.org/C3017773396","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Ultra low power","level":4,"score":0.5757720470428467},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5742201209068298},{"id":"https://openalex.org/C81860439","wikidata":"https://www.wikidata.org/wiki/Q251212","display_name":"Internet of Things","level":2,"score":0.5441019535064697},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.5431494116783142},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5266052484512329},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4778815805912018},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.42897123098373413},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.41896945238113403},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41807079315185547},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.413131445646286},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2681680917739868},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.20368525385856628},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.12906593084335327},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09717196226119995},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2017.7993513","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2017.7993513","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Conference on IC Design and Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7400000095367432,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1577621330","https://openalex.org/W1966797259","https://openalex.org/W2021433466","https://openalex.org/W2061112791","https://openalex.org/W2081421305","https://openalex.org/W2158715350","https://openalex.org/W2584868045","https://openalex.org/W2585039363","https://openalex.org/W6683085269"],"related_works":["https://openalex.org/W1539859190","https://openalex.org/W2358143577","https://openalex.org/W2001300309","https://openalex.org/W2037588458","https://openalex.org/W2139636502","https://openalex.org/W2118933001","https://openalex.org/W1970914845","https://openalex.org/W2061602986","https://openalex.org/W2368946031","https://openalex.org/W2905417291"],"abstract_inverted_index":{"This":[0],"paper":[1],"reviews":[2],"the":[3,31,38,43,49,77],"main":[4],"differentiating":[5],"features":[6],"of":[7,23,28],"planar":[8,12],"FDSOI":[9,33,86],"devices":[10],"vs":[11],"bulk":[13],"and":[14,20,46,71,91],"3D":[15],"FinFETs":[16,88],"for":[17,89],"ultra-low":[18],"power":[19],"IoT":[21],"(Internet":[22],"Things)":[24],"applications.":[25],"The":[26],"interest":[27],"using":[29],"back-bias,":[30],"specific":[32],"device/design":[34],"feature,":[35],"to":[36,41,47,76,85],"maximize":[37],"performance/power":[39],"efficiency,":[40],"mitigate":[42],"process":[44],"variability":[45],"suppress":[48],"leakage":[50],"is":[51],"highlighted":[52],"in":[53],"this":[54],"paper.":[55],"Low":[56],"parasitic":[57],"gate":[58,73],"capacitance,":[59],"low":[60,72],"V":[61],"<sub":[62],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[63],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</sub>":[64],"mismatch":[65],"associated":[66],"with":[67],"its":[68],"undoped":[69],"channel,":[70],"resistance":[74],"linked":[75],"gate-first":[78],"integration":[79],"also":[80],"bring":[81],"some":[82],"competitive":[83],"advantages":[84],"over":[87],"Analog":[90],"RF":[92],"devices.":[93]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}