{"id":"https://openalex.org/W2038297000","doi":"https://doi.org/10.1109/icicdt.2014.6838606","title":"FinFET SRAM design challenges","display_name":"FinFET SRAM design challenges","publication_year":2014,"publication_date":"2014-05-01","ids":{"openalex":"https://openalex.org/W2038297000","doi":"https://doi.org/10.1109/icicdt.2014.6838606","mag":"2038297000"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2014.6838606","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2014.6838606","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022925617","display_name":"David C. Burnett","orcid":"https://orcid.org/0000-0001-9686-6690"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David Burnett","raw_affiliation_strings":["GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","Global Memory Solutions, GLOBALFOUNDRIES, Austin, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"Global Memory Solutions, GLOBALFOUNDRIES, Austin, TX","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109376692","display_name":"Sanjay Parihar","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sanjay Parihar","raw_affiliation_strings":["GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","Global Memory Solutions, GLOBALFOUNDRIES, Austin, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"Global Memory Solutions, GLOBALFOUNDRIES, Austin, TX","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066444974","display_name":"Hema Ramamurthy","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hema Ramamurthy","raw_affiliation_strings":["GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","Global Memory Solutions, GLOBALFOUNDRIES, Austin, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"Global Memory Solutions, GLOBALFOUNDRIES, Austin, TX","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019527258","display_name":"Sriram Balasubramanian","orcid":"https://orcid.org/0000-0002-7886-6184"},"institutions":[{"id":"https://openalex.org/I16269868","display_name":"Santa Clara University","ror":"https://ror.org/03ypqe447","country_code":"US","type":"education","lineage":["https://openalex.org/I16269868"]},{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sriram Balasubramanian","raw_affiliation_strings":["GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","Santa Clara, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Global Memory Solutions, Austin, Santa Clara, CA, TX","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"Santa Clara, CA","institution_ids":["https://openalex.org/I16269868"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.7682,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.91303992,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9173206090927124},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.7407523989677429},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.6773733496665955},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.5322263836860657},{"id":"https://openalex.org/keywords/cell-size","display_name":"Cell size","score":0.5170845985412598},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5166019201278687},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.488292932510376},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4619484543800354},{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.4206284284591675},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.37839314341545105},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3370639681816101},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.29594123363494873},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20656028389930725},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.18571791052818298},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1275607943534851}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9173206090927124},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.7407523989677429},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6773733496665955},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.5322263836860657},{"id":"https://openalex.org/C3017597547","wikidata":"https://www.wikidata.org/wiki/Q189159","display_name":"Cell size","level":2,"score":0.5170845985412598},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5166019201278687},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.488292932510376},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4619484543800354},{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.4206284284591675},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.37839314341545105},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3370639681816101},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.29594123363494873},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20656028389930725},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.18571791052818298},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1275607943534851},{"id":"https://openalex.org/C95444343","wikidata":"https://www.wikidata.org/wiki/Q7141","display_name":"Cell biology","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2014.6838606","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2014.6838606","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1974338211","https://openalex.org/W1989004855","https://openalex.org/W1996188635","https://openalex.org/W1998798369","https://openalex.org/W2008362573","https://openalex.org/W2048611611","https://openalex.org/W2049520384","https://openalex.org/W2072607061","https://openalex.org/W2073818373","https://openalex.org/W2162613878","https://openalex.org/W2165720303","https://openalex.org/W2172203429"],"related_works":["https://openalex.org/W2117824263","https://openalex.org/W2134421493","https://openalex.org/W2489257435","https://openalex.org/W1909296377","https://openalex.org/W2089002058","https://openalex.org/W3185029353","https://openalex.org/W3116379964","https://openalex.org/W2766443086","https://openalex.org/W2967161359","https://openalex.org/W2915176329"],"abstract_inverted_index":{"The":[0],"utilization":[1],"of":[2,35,51,87,97,112],"FinFET":[3,131],"devices":[4,15],"in":[5,39,124],"the":[6,18,32,36,49,52,57,65,75,79,82,93,98,105,110,135],"SRAM":[7,53,84],"cell":[8,54,58,76,85,125,132],"provides":[9],"many":[10],"benefits":[11],"over":[12],"planar":[13,46],"bulk":[14],"due":[16],"to":[17,45,61,69,78],"fully-depleted":[19],"behavior":[20],"with":[21,55,64,139],"improved":[22],"subthreshold":[23],"slope,":[24],"short-channel":[25],"effects,":[26],"drive":[27],"current,":[28],"and":[29,127,134],"mismatch.":[30],"However,":[31],"quantized":[33],"nature":[34],"fins":[37,89],"results":[38],"several":[40,140],"new":[41],"challenges":[42],"as":[43],"compared":[44],"devices.":[47],"For":[48,81],"layout":[50],"FinFETs,":[56],"width":[59],"needs":[60],"match":[62],"up":[63],"periphery":[66],"fin":[67],"pitch":[68],"provide":[70],"a":[71],"smooth":[72],"transition":[73],"from":[74],"array":[77],"periphery.":[80],"highest-density":[83],"comprised":[86],"single":[88],"for":[90,116,129],"each":[91],"device,":[92],"minimum":[94],"Vdd":[95,118],"(Vmin)":[96],"write":[99,113],"operation":[100],"becomes":[101],"substantially":[102],"worse":[103],"than":[104],"read":[106],"operation,":[107],"thus":[108],"requiring":[109],"use":[111],"assist":[114,142],"techniques":[115],"low":[117],"operation.":[119],"This":[120],"paper":[121],"highlights":[122],"tradeoffs":[123],"size":[126],"Vmin":[128,137],"different":[130,141],"configurations":[133],"simulated":[136],"improvements":[138],"approaches.":[143]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}