{"id":"https://openalex.org/W2135415889","doi":"https://doi.org/10.1109/icicdt.2014.6838597","title":"A new aspect of plasma-induced physical damage in three-dimensional scaled structures — Sidewall damage by stochastic straggling and sputtering","display_name":"A new aspect of plasma-induced physical damage in three-dimensional scaled structures — Sidewall damage by stochastic straggling and sputtering","publication_year":2014,"publication_date":"2014-05-01","ids":{"openalex":"https://openalex.org/W2135415889","doi":"https://doi.org/10.1109/icicdt.2014.6838597","mag":"2135415889"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2014.6838597","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2014.6838597","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064180912","display_name":"Koji Eriguchi","orcid":"https://orcid.org/0000-0003-1485-5897"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Eriguchi","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan#TAB#","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028070641","display_name":"Yoshinori Takao","orcid":"https://orcid.org/0000-0002-3468-8857"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinori Takao","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan#TAB#","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101132185","display_name":"Kouichi Ono","orcid":null},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kouichi Ono","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto 615-8540, Japan#TAB#","institution_ids":["https://openalex.org/I22299242"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.9164,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.88024089,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":0.9919999837875366,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sputtering","display_name":"Sputtering","score":0.8324836492538452},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.6552383899688721},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5739862322807312},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2978379726409912},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.24243289232254028},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.1924366056919098},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.09106194972991943}],"concepts":[{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.8324836492538452},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6552383899688721},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5739862322807312},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2978379726409912},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24243289232254028},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.1924366056919098},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.09106194972991943}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2014.6838597","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2014.6838597","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1491885026","https://openalex.org/W1966058486","https://openalex.org/W1986926667","https://openalex.org/W1989004855","https://openalex.org/W1998541581","https://openalex.org/W1999640420","https://openalex.org/W2014940325","https://openalex.org/W2016790974","https://openalex.org/W2017809842","https://openalex.org/W2027198304","https://openalex.org/W2037782625","https://openalex.org/W2042043897","https://openalex.org/W2056875522","https://openalex.org/W2056960558","https://openalex.org/W2071555168","https://openalex.org/W2079833800","https://openalex.org/W2084892188","https://openalex.org/W2091968561","https://openalex.org/W2105276993","https://openalex.org/W2106567497","https://openalex.org/W2127212879","https://openalex.org/W2130410585","https://openalex.org/W2162517322","https://openalex.org/W2493880907"],"related_works":["https://openalex.org/W2035249489","https://openalex.org/W1967383351","https://openalex.org/W850150341","https://openalex.org/W142388841","https://openalex.org/W2066362799","https://openalex.org/W2295922851","https://openalex.org/W1969082957","https://openalex.org/W1992258975","https://openalex.org/W2331021532","https://openalex.org/W2034041074"],"abstract_inverted_index":{"Increasing":[0],"demands":[1],"for":[2],"higher":[3,143],"performance":[4],"LSIs":[5],"require":[6],"three":[7],"dimensional":[8],"(3D)":[9],"structures":[10,33,113],"such":[11,32],"as":[12],"a":[13,20,102,124,129,147],"FinFET":[14],"and":[15,19,65,142,168],"3D":[16,21,178],"integration":[17],"package,":[18],"NAND":[22],"flash":[23],"memory.":[24],"We":[25],"focused":[26],"on":[27,89],"damage":[28,38,80,151],"creation":[29],"mechanism":[30],"in":[31,43,62,75,83,101,152,173],"during":[34,53],"plasma":[35,163],"etching-plasma-induced":[36],"physical":[37],"(PPD).":[39],"Compared":[40],"to":[41,106,119],"PPD":[42,175],"planar":[44],"FETs":[45],"(e.g.":[46],"Si":[47,103],"recess),":[48],"atomistic":[49],"simulations":[50],"predicted":[51],"that,":[52],"etching":[54],"of":[55,59,67,92,123,150,162,177],"FinFETs,":[56],"both":[57,165],"\u201cstraggling\u201d":[58],"impinging":[60],"ions":[61,138],"the":[63,70,76,84,90,108,121,153,159,174],"bulk":[64,77,154],"\u201csputtering\u201d":[66],"species":[68],"at":[69],"reacting":[71],"surface":[72],"created":[73],"defects":[74],"fin.":[78,155],"The":[79,133],"layer":[81],"formation":[82],"fin":[85,104],"structure":[86,105],"was":[87,99],"modeled":[88],"basis":[91],"range":[93],"theory.":[94],"A":[95],"molecular":[96],"dynamics":[97],"simulation":[98],"performed":[100],"verify":[107],"proposed":[109],"mechanism.":[110],"Created":[111],"defect":[112],"by":[114,128],"these":[115],"mechanisms":[116],"were":[117],"confirmed":[118],"play":[120],"role":[122],"carrier":[125],"trap":[126],"site":[127],"quantum":[130],"mechanical":[131],"calculation.":[132],"obtained":[134],"results":[135],"showed":[136],"that":[137],"with":[139],"lighter":[140],"masses":[141],"incident":[144],"energies":[145],"induced":[146],"larger":[148],"amount":[149],"Since":[156],"they":[157],"are":[158],"intrinsic":[160],"nature":[161],"etching,":[164],"stochastic":[166],"straggling":[167],"sputtering":[169],"should":[170],"be":[171],"implemented":[172],"evaluation":[176],"devices.":[179]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":4}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}