{"id":"https://openalex.org/W2079833800","doi":"https://doi.org/10.1109/icicdt.2013.6563334","title":"Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency","display_name":"Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency","publication_year":2013,"publication_date":"2013-05-01","ids":{"openalex":"https://openalex.org/W2079833800","doi":"https://doi.org/10.1109/icicdt.2013.6563334","mag":"2079833800"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2013.6563334","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2013.6563334","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 2013 International Conference on IC Design &amp; Technology (ICICDT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5062064861","display_name":"Asahiko Matsuda","orcid":"https://orcid.org/0000-0001-5989-027X"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Asahiko Matsuda","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079151927","display_name":"Yoshinori Nakakubo","orcid":null},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinori Nakakubo","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028070641","display_name":"Yoshinori Takao","orcid":"https://orcid.org/0000-0002-3468-8857"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinori Takao","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064180912","display_name":"Koji Eriguchi","orcid":"https://orcid.org/0000-0003-1485-5897"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Eriguchi","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101132185","display_name":"Kouichi Ono","orcid":null},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kouichi Ono","raw_affiliation_strings":["Graduate School of Engineering, Kyoto University, Kyoto, Japan","Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]},{"raw_affiliation_string":"Grad. Sch. of Eng., Kyoto Univ. Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.4058,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.82321619,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"191","last_page":"194"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.7020494937896729},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.6636717319488525},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6251145601272583},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.6082123517990112},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.434611976146698},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.31437769532203674},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14512047171592712}],"concepts":[{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.7020494937896729},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6636717319488525},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6251145601272583},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.6082123517990112},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.434611976146698},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.31437769532203674},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14512047171592712},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2013.6563334","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2013.6563334","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 2013 International Conference on IC Design &amp; Technology (ICICDT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W24136597","https://openalex.org/W1964560403","https://openalex.org/W1966058486","https://openalex.org/W1998541581","https://openalex.org/W1998949575","https://openalex.org/W2003974290","https://openalex.org/W2004546193","https://openalex.org/W2016790974","https://openalex.org/W2017809842","https://openalex.org/W2018442497","https://openalex.org/W2027198304","https://openalex.org/W2035266068","https://openalex.org/W2037782625","https://openalex.org/W2056875522","https://openalex.org/W2084892188","https://openalex.org/W2105276993","https://openalex.org/W2106567497","https://openalex.org/W2147415793","https://openalex.org/W2493880907"],"related_works":["https://openalex.org/W4246450666","https://openalex.org/W4388998267","https://openalex.org/W2898370298","https://openalex.org/W2137437058","https://openalex.org/W4390401159","https://openalex.org/W2744391499","https://openalex.org/W2800070131","https://openalex.org/W4230250635","https://openalex.org/W3041790586","https://openalex.org/W4401835565"],"abstract_inverted_index":{"Plasma-induced":[0],"defect":[1,37],"generation":[2,38],"process":[3,43],"in":[4,40],"crystalline":[5],"Si":[6,26],"structure":[7],"was":[8,48],"simulated":[9],"by":[10,85,93],"classical":[11],"molecular":[12],"dynamics":[13],"simulations.":[14],"Energy":[15],"distribution":[16,89],"functions":[17],"of":[18,55,71,90,96,109],"Ar":[19],"and":[20,65],"Cl":[21],"ions":[22,91,98],"incident":[23,87],"on":[24,35],"the":[25,33,36,69,74,79,86,94,100],"surface":[27],"(IEDF)":[28],"were":[29],"implemented":[30],"to":[31,50,105],"predict":[32,77],"impacts":[34],"processes":[39],"present-day":[41],"plasma":[42],"equipments.":[44],"The":[45],"damaged-layer":[46],"thickness":[47],"confirmed":[49],"be":[51,82],"a":[52,61],"weak":[53],"function":[54],"IEDF,":[56],"which":[57,103],"are":[58],"consistent":[59],"with":[60],"binary-collision-based":[62],"range":[63],"model":[64],"experimental":[66],"results.":[67],"In":[68],"case":[70],"\u201cfin-gate":[72],"structure\u201d,":[73],"simulation":[75],"results":[76],"that":[78],"sidewall":[80],"may":[81],"damaged":[83],"not":[84],"angular":[88],"but":[92],"straggling":[95],"high-energy":[97],"near":[99],"reaction":[101],"surface,":[102],"leads":[104],"an":[106],"on-current":[107],"degradation":[108],"FinFETs.":[110]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":5},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}
