{"id":"https://openalex.org/W1965425827","doi":"https://doi.org/10.1109/icicdt.2012.6232854","title":"Evaluation of non-destructive etch depth measurement for through silicon vias","display_name":"Evaluation of non-destructive etch depth measurement for through silicon vias","publication_year":2012,"publication_date":"2012-05-01","ids":{"openalex":"https://openalex.org/W1965425827","doi":"https://doi.org/10.1109/icicdt.2012.6232854","mag":"1965425827"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2012.6232854","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232854","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111236831","display_name":"Thuy Dao","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Thuy Dao","raw_affiliation_strings":["Freescale Semiconductor, Inc., Austin, TX, USA","Freescale Semiconductor, Austin, Texas, USA"],"affiliations":[{"raw_affiliation_string":"Freescale Semiconductor, Inc., Austin, TX, USA","institution_ids":[]},{"raw_affiliation_string":"Freescale Semiconductor, Austin, Texas, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007930239","display_name":"Tania Thomas","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tania Thomas","raw_affiliation_strings":["Freescale Semiconductor, Inc., Austin, TX, USA","Freescale Semiconductor, Austin, Texas, USA"],"affiliations":[{"raw_affiliation_string":"Freescale Semiconductor, Inc., Austin, TX, USA","institution_ids":[]},{"raw_affiliation_string":"Freescale Semiconductor, Austin, Texas, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071121429","display_name":"David Marx","orcid":null},"institutions":[{"id":"https://openalex.org/I912377674","display_name":"Newbury College","ror":"https://ror.org/01g4a4162","country_code":"US","type":"education","lineage":["https://openalex.org/I912377674"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David Marx","raw_affiliation_strings":["Tamar Technology, Newbury Park, CA, USA","Tamar Technol., Newbury Park, CA, USA"],"affiliations":[{"raw_affiliation_string":"Tamar Technology, Newbury Park, CA, USA","institution_ids":["https://openalex.org/I912377674"]},{"raw_affiliation_string":"Tamar Technol., Newbury Park, CA, USA","institution_ids":["https://openalex.org/I912377674"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037520794","display_name":"David Grant","orcid":"https://orcid.org/0000-0003-4584-1498"},"institutions":[{"id":"https://openalex.org/I912377674","display_name":"Newbury College","ror":"https://ror.org/01g4a4162","country_code":"US","type":"education","lineage":["https://openalex.org/I912377674"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David Grant","raw_affiliation_strings":["Tamar Technology, Newbury Park, CA, USA","Tamar Technol., Newbury Park, CA, USA"],"affiliations":[{"raw_affiliation_string":"Tamar Technology, Newbury Park, CA, USA","institution_ids":["https://openalex.org/I912377674"]},{"raw_affiliation_string":"Tamar Technol., Newbury Park, CA, USA","institution_ids":["https://openalex.org/I912377674"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5111236831"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.491,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.66098264,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.8766276240348816},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.830493688583374},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7818670272827148},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.662886381149292},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6230102777481079},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.5566328167915344},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5072367191314697},{"id":"https://openalex.org/keywords/surface-finish","display_name":"Surface finish","score":0.4419183135032654},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"Surface roughness","score":0.4158838093280792},{"id":"https://openalex.org/keywords/plasma-etching","display_name":"Plasma etching","score":0.41147226095199585},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.2118561565876007},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.07142740488052368}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.8766276240348816},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.830493688583374},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7818670272827148},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.662886381149292},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6230102777481079},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.5566328167915344},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5072367191314697},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.4419183135032654},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.4158838093280792},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.41147226095199585},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2118561565876007},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07142740488052368}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2012.6232854","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232854","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.49000000953674316,"display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1649310022","https://openalex.org/W2015941345","https://openalex.org/W2035692976","https://openalex.org/W2112291048","https://openalex.org/W2130658442","https://openalex.org/W2153957768","https://openalex.org/W6654486189"],"related_works":["https://openalex.org/W2086753183","https://openalex.org/W2377240607","https://openalex.org/W2051671860","https://openalex.org/W4362730893","https://openalex.org/W2091709154","https://openalex.org/W2357965514","https://openalex.org/W2103548986","https://openalex.org/W2046355759","https://openalex.org/W2588244836","https://openalex.org/W161822665"],"abstract_inverted_index":{"Through-Silicon-Via":[0],"depth":[1,41],"inline":[2,37],"monitoring":[3,38],"is":[4,28,51,57,81],"one":[5],"of":[6,26,39,65,75],"the":[7,24,32,47,54,63],"key":[8],"requirements":[9],"for":[10,83],"implementing":[11],"TSV":[12,70],"technology":[13],"into":[14],"high":[15],"volume":[16],"production.":[17],"The":[18],"Tamar":[19],"tool":[20],"using":[21],"IR":[22],"from":[23],"backside":[25,48],"wafer":[27,49],"demonstrated":[29],"to":[30,34,59,62],"have":[31],"capability":[33],"provide":[35],"non-destructive":[36],"trench":[40],"after":[42],"plasma":[43],"etch,":[44],"even":[45],"when":[46],"surface":[50],"rough.":[52],"However,":[53],"etch":[55],"profile":[56],"found":[58],"be":[60],"critical":[61],"effectiveness":[64],"this":[66],"tool.":[67],"A":[68],"flat":[69],"bottom":[71],"with":[72],"a":[73],"minimum":[74],"at":[76],"least":[77],"1um":[78],"in":[79],"width":[80],"required":[82],"accurate":[84],"and":[85],"repeatable":[86],"measurements.":[87]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}