{"id":"https://openalex.org/W2024596430","doi":"https://doi.org/10.1109/icicdt.2012.6232851","title":"System-level design and performance modeling for multilevel interconnect networks for carbon nanotube field-effect transistors","display_name":"System-level design and performance modeling for multilevel interconnect networks for carbon nanotube field-effect transistors","publication_year":2012,"publication_date":"2012-05-01","ids":{"openalex":"https://openalex.org/W2024596430","doi":"https://doi.org/10.1109/icicdt.2012.6232851","mag":"2024596430"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2012.6232851","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232851","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017409661","display_name":"Ahmet Ceyhan","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Ahmet Ceyhan","raw_affiliation_strings":["Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, USA","Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080526846","display_name":"Azad Naeemi","orcid":"https://orcid.org/0000-0003-4774-9046"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Azad Naeemi","raw_affiliation_strings":["Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, USA","Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5017409661"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.07911892,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8210474848747253},{"id":"https://openalex.org/keywords/repeater","display_name":"Repeater (horology)","score":0.7515621781349182},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.7472023963928223},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.6461957693099976},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5479519367218018},{"id":"https://openalex.org/keywords/power\u2013delay-product","display_name":"Power\u2013delay product","score":0.5458838939666748},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5071933269500732},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.47917190194129944},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.418276846408844},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40838688611984253},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2834518253803253},{"id":"https://openalex.org/keywords/adder","display_name":"Adder","score":0.12387558817863464},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10731136798858643},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09362664818763733}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8210474848747253},{"id":"https://openalex.org/C195545963","wikidata":"https://www.wikidata.org/wiki/Q1469803","display_name":"Repeater (horology)","level":3,"score":0.7515621781349182},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.7472023963928223},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.6461957693099976},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5479519367218018},{"id":"https://openalex.org/C2776391166","wikidata":"https://www.wikidata.org/wiki/Q7236873","display_name":"Power\u2013delay product","level":4,"score":0.5458838939666748},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5071933269500732},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.47917190194129944},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.418276846408844},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40838688611984253},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2834518253803253},{"id":"https://openalex.org/C164620267","wikidata":"https://www.wikidata.org/wiki/Q376953","display_name":"Adder","level":3,"score":0.12387558817863464},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10731136798858643},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09362664818763733},{"id":"https://openalex.org/C125411270","wikidata":"https://www.wikidata.org/wiki/Q18653","display_name":"Encoding (memory)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2012.6232851","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232851","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Conference on IC Design & Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.49000000953674316,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1534416617","https://openalex.org/W1556480701","https://openalex.org/W1567371453","https://openalex.org/W1603422789","https://openalex.org/W1629355038","https://openalex.org/W1976351978","https://openalex.org/W2020962395","https://openalex.org/W2034089924","https://openalex.org/W2063821159","https://openalex.org/W2091844454","https://openalex.org/W2100227344","https://openalex.org/W2103491903","https://openalex.org/W2110809509","https://openalex.org/W2118973076","https://openalex.org/W2143639388","https://openalex.org/W2153274222","https://openalex.org/W2163874178","https://openalex.org/W2165303371","https://openalex.org/W2167356440","https://openalex.org/W2172161464","https://openalex.org/W3098962249","https://openalex.org/W3152285429","https://openalex.org/W6636268624","https://openalex.org/W6674970081","https://openalex.org/W6684404342"],"related_works":["https://openalex.org/W3006885562","https://openalex.org/W2562383580","https://openalex.org/W2627056957","https://openalex.org/W14477523","https://openalex.org/W2886813482","https://openalex.org/W1524405004","https://openalex.org/W2169508744","https://openalex.org/W2804621714","https://openalex.org/W2115356096","https://openalex.org/W2180556570"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,8,24,27,52,77,86,108,121],"first":[4,25],"system-level":[5],"study":[6],"on":[7,16],"impact":[9],"of":[10,45,63,81,91,107,111,120,123,127],"carbon":[11],"nanotube":[12],"field-effect":[13],"transistors":[14],"(CNFETs)":[15],"multilevel":[17,116],"interconnect":[18,46,117],"networks.":[19],"In":[20],"this":[21],"paper,":[22],"for":[23],"time,":[26],"gains":[28],"in":[29,58,105,114],"speed":[30],"and":[31,55,61,79,88],"energy-delay":[32],"product":[33],"(EDP)":[34],"offered":[35],"by":[36,76],"CNFETs":[37,92,100],"over":[38,70],"CMOS":[39],"are":[40,73],"presented":[41],"as":[42],"a":[43,102,115,124],"function":[44],"length.":[47],"It":[48],"is":[49],"demonstrated":[50],"that":[51],"respective":[53],"4.3\u00d7":[54],"8\u00d7":[56],"improvements":[57,90],"intrinsic":[59],"delay":[60,78,87],"EDP":[62,80,89],"CNFET":[64],"inverters":[65,72],"at":[66,94],"16nm":[67],"technology":[68],"node":[69],"Si-CMOS":[71,131],"quickly":[74],"overshadowed":[75],"interconnects.":[82],"For":[83],"repeater-inserted":[84],"interconnects,":[85],"saturate":[93],"2.08\u00d7":[95],"compared":[96,129],"to":[97,130],"CMOS.":[98],"However,":[99],"offer":[101],"major":[103],"advantage":[104],"terms":[106],"required":[109],"number":[110,126],"metal":[112],"levels":[113],"network":[118],"because":[119],"availability":[122],"larger":[125],"repeaters":[128],"switches.":[132]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}