{"id":"https://openalex.org/W2082059741","doi":"https://doi.org/10.1109/icicdt.2012.6232838","title":"Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration","display_name":"Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration","publication_year":2012,"publication_date":"2012-05-01","ids":{"openalex":"https://openalex.org/W2082059741","doi":"https://doi.org/10.1109/icicdt.2012.6232838","mag":"2082059741"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2012.6232838","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232838","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Conference on IC Design &amp; Technology","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100702700","display_name":"Ziyuan Liu","orcid":"https://orcid.org/0000-0001-9976-6804"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Ziyuan Liu","raw_affiliation_strings":["Device & Analysis Technology Division, Renesas Electronics Corporation, Kawasaki, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Device & Analysis Technology Division, Renesas Electronics Corporation, Kawasaki, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054179166","display_name":"F. Hayashi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Fumihiko Hayashi","raw_affiliation_strings":["Device & Analysis Technology Division, Renesas Electronics Corporation, Kawasaki, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Device & Analysis Technology Division, Renesas Electronics Corporation, Kawasaki, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109223997","display_name":"Shinji Fujieda","orcid":null},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Fujieda","raw_affiliation_strings":["Smart Energy Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Smart Energy Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003983147","display_name":"Markus Wilde","orcid":"https://orcid.org/0000-0002-6397-2208"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Markus Wilde","raw_affiliation_strings":["Institute of Industrial Science, The University of Tokyo, Tokyo, Japan","Institute of Industrial Science, The University of Tokyo,,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo,,Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036715462","display_name":"Katsuyuki Fukutani","orcid":"https://orcid.org/0000-0002-6270-3620"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsuyuki Fukutani","raw_affiliation_strings":["Institute of Industrial Science, The University of Tokyo, Tokyo, Japan","Institute of Industrial Science, The University of Tokyo,,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo,,Japan","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100702700"],"corresponding_institution_ids":["https://openalex.org/I4210153176"],"apc_list":null,"apc_paid":null,"fwci":0.2455,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.61013746,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"73","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.656765341758728},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6266261339187622},{"id":"https://openalex.org/keywords/impurity","display_name":"Impurity","score":0.5581197738647461},{"id":"https://openalex.org/keywords/hydrogen","display_name":"Hydrogen","score":0.47745993733406067},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.4562763273715973},{"id":"https://openalex.org/keywords/penetration","display_name":"Penetration (warfare)","score":0.4527930021286011},{"id":"https://openalex.org/keywords/chemical-engineering","display_name":"Chemical engineering","score":0.4182814955711365},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.41177043318748474},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.402983695268631},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3660871982574463},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.17915856838226318},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.17747095227241516},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08731067180633545}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.656765341758728},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6266261339187622},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.5581197738647461},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.47745993733406067},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.4562763273715973},{"id":"https://openalex.org/C80107235","wikidata":"https://www.wikidata.org/wiki/Q7162625","display_name":"Penetration (warfare)","level":2,"score":0.4527930021286011},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4182814955711365},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.41177043318748474},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.402983695268631},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3660871982574463},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17915856838226318},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.17747095227241516},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08731067180633545},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C42475967","wikidata":"https://www.wikidata.org/wiki/Q194292","display_name":"Operations research","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2012.6232838","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2012.6232838","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Conference on IC Design &amp; Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1987355627","https://openalex.org/W1996951009","https://openalex.org/W2005305771","https://openalex.org/W2012806937","https://openalex.org/W2021750186","https://openalex.org/W2149068088","https://openalex.org/W2158510949","https://openalex.org/W2539201834"],"related_works":["https://openalex.org/W2370849218","https://openalex.org/W2053668343","https://openalex.org/W2035753757","https://openalex.org/W2083585972","https://openalex.org/W2382449171","https://openalex.org/W2062485242","https://openalex.org/W2054480599","https://openalex.org/W2463215714","https://openalex.org/W2040527247","https://openalex.org/W2019408183"],"abstract_inverted_index":{"This":[0],"paper":[1],"reviews":[2],"our":[3],"recent":[4],"experiments":[5],"that":[6,76],"correlate":[7],"the":[8,15,21,37,41,49,65,79,89],"F-N":[9],"stress-induced":[10],"gate":[11],"dielectric":[12],"degradation":[13],"with":[14],"hydrogen-related":[16],"(H)":[17],"species":[18],"permeability":[19,28],"of":[20,29,53,91],"liner":[22],"nitride":[23],"(SiN)":[24],"film.":[25],"The":[26],"H":[27],"SiN":[30,59,74],"films":[31,60,75],"was":[32,61],"found":[33],"to":[34,67,87],"depend":[35],"on":[36],"deposition":[38],"process":[39],"and":[40],"post-deposition":[42],"treatment.":[43],"A":[44],"specific":[45],"ultrathin":[46],"oxynitride":[47],"in":[48],"near":[50],"surface":[51],"region":[52],"N":[54],"<sub":[55],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[56],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[57],"-annealed":[58],"discovered,":[62],"which":[63],"has":[64],"potential":[66],"function":[68],"as":[69],"an":[70],"H-diffusion":[71],"barrier.":[72],"Adopting":[73],"effectively":[77],"block":[78],"H-related":[80],"impurity":[81],"penetration":[82],"is":[83],"a":[84],"promising":[85],"route":[86],"improve":[88],"reliability":[90],"dielectrics":[92],"film":[93],"applied":[94],"for":[95],"FLASH":[96],"memories.":[97]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}