{"id":"https://openalex.org/W4407693904","doi":"https://doi.org/10.1109/iceic64972.2025.10879679","title":"SPICE Modeling and Parameter Extraction for Floating-Body Partially-Depleted SOI MOSFETs","display_name":"SPICE Modeling and Parameter Extraction for Floating-Body Partially-Depleted SOI MOSFETs","publication_year":2025,"publication_date":"2025-01-19","ids":{"openalex":"https://openalex.org/W4407693904","doi":"https://doi.org/10.1109/iceic64972.2025.10879679"},"language":"en","primary_location":{"id":"doi:10.1109/iceic64972.2025.10879679","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic64972.2025.10879679","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006007563","display_name":"Wongi Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I83436808","display_name":"Hankuk University of Foreign Studies","ror":"https://ror.org/051q2m369","country_code":"KR","type":"education","lineage":["https://openalex.org/I83436808"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Wongi Cho","raw_affiliation_strings":["Hankuk University of Foreign Studies,Department of Electronics Engineering,Yongin-si,Gyeonggi-do,Korea,17035"],"affiliations":[{"raw_affiliation_string":"Hankuk University of Foreign Studies,Department of Electronics Engineering,Yongin-si,Gyeonggi-do,Korea,17035","institution_ids":["https://openalex.org/I83436808"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029913215","display_name":"Seonghearn Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I83436808","display_name":"Hankuk University of Foreign Studies","ror":"https://ror.org/051q2m369","country_code":"KR","type":"education","lineage":["https://openalex.org/I83436808"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonghearn Lee","raw_affiliation_strings":["Hankuk University of Foreign Studies,Department of Electronics Engineering,Yongin-si,Gyeonggi-do,Korea,17035"],"affiliations":[{"raw_affiliation_string":"Hankuk University of Foreign Studies,Department of Electronics Engineering,Yongin-si,Gyeonggi-do,Korea,17035","institution_ids":["https://openalex.org/I83436808"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5006007563"],"corresponding_institution_ids":["https://openalex.org/I83436808"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.02731165,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.8976690173149109},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6862534284591675},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.47598281502723694},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4576070308685303},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45423999428749084},{"id":"https://openalex.org/keywords/extraction","display_name":"Extraction (chemistry)","score":0.43097367882728577},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35171324014663696},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.283780038356781},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26415884494781494},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.19838353991508484},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17788362503051758},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15295255184173584},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.13017979264259338},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.0932086706161499}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.8976690173149109},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6862534284591675},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.47598281502723694},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4576070308685303},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45423999428749084},{"id":"https://openalex.org/C4725764","wikidata":"https://www.wikidata.org/wiki/Q844704","display_name":"Extraction (chemistry)","level":2,"score":0.43097367882728577},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35171324014663696},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.283780038356781},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26415884494781494},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.19838353991508484},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17788362503051758},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15295255184173584},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.13017979264259338},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0932086706161499},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceic64972.2025.10879679","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic64972.2025.10879679","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2123697471","https://openalex.org/W2906593151","https://openalex.org/W4380360503"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W2600478192","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2545707786","https://openalex.org/W2473578222","https://openalex.org/W2264082943"],"abstract_inverted_index":{"A":[0],"new":[1,84],"BSIMSOI4":[2],"macro":[3,45],"model":[4,23,46],"is":[5,38,57],"proposed":[6,58],"for":[7],"floating":[8],"body":[9],"PD-SOI":[10],"nMOSFETs":[11],"with":[12,68],"<tex":[13],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[14],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$L_{g}=0.1\\mu":[15],"\\mathrm{m}$</tex>.":[16],"Empirical":[17],"I-V":[18],"equations":[19,49],"are":[20,50],"developed":[21],"to":[22,40,59,72],"DC":[24],"kink":[25],"current":[26],"including":[27],"self-heating":[28],"effect":[29],"accurately.":[30],"For":[31],"the":[32,41,44,75,80,83],"low-frequency":[33],"effect,":[34],"RC":[35],"series":[36],"network":[37],"added":[39],"output":[42],"of":[43,82],"and":[47],"voltage-dependent":[48],"empirically":[51],"constructed.":[52],"An":[53],"improved":[54],"RF":[55],"method":[56],"extract":[60],"capacitance":[61],"parameters.":[62],"The":[63],"modeled":[64],"S-parameters":[65],"agree":[66],"well":[67],"measured":[69],"ones":[70],"up":[71],"20GHz":[73],"in":[74],"wide":[76],"bias":[77],"range,":[78],"verifying":[79],"accuracy":[81],"model.":[85]},"counts_by_year":[],"updated_date":"2025-12-22T23:10:17.713674","created_date":"2025-10-10T00:00:00"}