{"id":"https://openalex.org/W4323824497","doi":"https://doi.org/10.1109/iceic57457.2023.10049931","title":"ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode","display_name":"ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode","publication_year":2023,"publication_date":"2023-02-05","ids":{"openalex":"https://openalex.org/W4323824497","doi":"https://doi.org/10.1109/iceic57457.2023.10049931"},"language":"en","primary_location":{"id":"doi:10.1109/iceic57457.2023.10049931","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic57457.2023.10049931","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091679709","display_name":"DongJun Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I133533813","display_name":"Gangneung\u2013Wonju National University","ror":"https://ror.org/0461cvh40","country_code":"KR","type":"education","lineage":["https://openalex.org/I133533813"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"DongJun Jang","raw_affiliation_strings":["Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457"],"affiliations":[{"raw_affiliation_string":"Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457","institution_ids":["https://openalex.org/I133533813"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044315410","display_name":"Beomso Jo","orcid":null},"institutions":[{"id":"https://openalex.org/I133533813","display_name":"Gangneung\u2013Wonju National University","ror":"https://ror.org/0461cvh40","country_code":"KR","type":"education","lineage":["https://openalex.org/I133533813"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Beomso Jo","raw_affiliation_strings":["Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457"],"affiliations":[{"raw_affiliation_string":"Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457","institution_ids":["https://openalex.org/I133533813"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103224110","display_name":"Young Lae Kim","orcid":"https://orcid.org/0000-0001-7440-9712"},"institutions":[{"id":"https://openalex.org/I133533813","display_name":"Gangneung\u2013Wonju National University","ror":"https://ror.org/0461cvh40","country_code":"KR","type":"education","lineage":["https://openalex.org/I133533813"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young Lae Kim","raw_affiliation_strings":["Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457"],"affiliations":[{"raw_affiliation_string":"Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457","institution_ids":["https://openalex.org/I133533813"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055495962","display_name":"Min-Woo Kwon","orcid":"https://orcid.org/0000-0002-6725-1969"},"institutions":[{"id":"https://openalex.org/I133533813","display_name":"Gangneung\u2013Wonju National University","ror":"https://ror.org/0461cvh40","country_code":"KR","type":"education","lineage":["https://openalex.org/I133533813"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min-Woo Kwon","raw_affiliation_strings":["Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457"],"affiliations":[{"raw_affiliation_string":"Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457","institution_ids":["https://openalex.org/I133533813"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5091679709"],"corresponding_institution_ids":["https://openalex.org/I133533813"],"apc_list":null,"apc_paid":null,"fwci":0.1339,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.39676947,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T12236","display_name":"Photoreceptor and optogenetics research","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.9627183675765991},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.8646715879440308},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.7363290786743164},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.594793975353241},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5118950605392456},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4675739109516144},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.44336363673210144},{"id":"https://openalex.org/keywords/von-neumann-architecture","display_name":"Von Neumann architecture","score":0.4297485947608948},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.42182743549346924},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3678668737411499},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3660360872745514},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3367448151111603},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.3237054944038391},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2683611512184143},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25950920581817627},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.14201560616493225},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11032959818840027},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07628506422042847}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.9627183675765991},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8646715879440308},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.7363290786743164},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.594793975353241},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5118950605392456},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4675739109516144},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.44336363673210144},{"id":"https://openalex.org/C80469333","wikidata":"https://www.wikidata.org/wiki/Q189088","display_name":"Von Neumann architecture","level":2,"score":0.4297485947608948},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.42182743549346924},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3678668737411499},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3660360872745514},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3367448151111603},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.3237054944038391},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2683611512184143},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25950920581817627},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.14201560616493225},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11032959818840027},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07628506422042847},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceic57457.2023.10049931","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic57457.2023.10049931","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7400000095367432,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1486852018","https://openalex.org/W1565888786","https://openalex.org/W1981578939","https://openalex.org/W1986225076","https://openalex.org/W2014402164","https://openalex.org/W2032832574","https://openalex.org/W2065977352","https://openalex.org/W2120557145","https://openalex.org/W2469880822","https://openalex.org/W6633886642"],"related_works":["https://openalex.org/W1872623660","https://openalex.org/W4292697011","https://openalex.org/W3207218810","https://openalex.org/W3212508523","https://openalex.org/W4386475142","https://openalex.org/W1995352804","https://openalex.org/W2086672837","https://openalex.org/W2793181810","https://openalex.org/W2016922062","https://openalex.org/W4367187682"],"abstract_inverted_index":{"From":[0],"the":[1,3,19,36,51,58,83,115,120,123,130,133,136,179,187,193,216,221],"past,":[2],"occurrence":[4],"of":[5,38,118,125,135,201,211,218,223],"bottlenecks":[6],"in":[7,50,68,122,132],"memory/computation":[8],"functions":[9],"has":[10],"been":[11,49],"a":[12,143],"problem":[13],"for":[14,21,85,96],"Von":[15],"Neumann":[16],"architecture.":[17],"As":[18,178],"demand":[20],"computing":[22,54],"and":[23,41,100,172,192,220],"data":[24],"storage":[25],"increases,":[26],"it":[27,205],"is":[28,93,127],"necessary":[29],"to":[30,34,129],"develop":[31],"high-performance":[32],"memory":[33,87,91,219],"overcome":[35],"limitations":[37],"operating":[39],"speed":[40],"low":[42],"power":[43],"consumption.":[44],"Recently,":[45],"neuromorphic":[46,86],"systems":[47],"have":[48,161,173],"spotlight":[52],"with":[53,78,103,150],"technology":[55],"that":[56,214],"imitates":[57],"human":[59,79],"brain.":[60],"Neuromorphic":[61],"architecture":[62],"can":[63],"be":[64,207],"an":[65,208],"important":[66,209],"factor":[67],"implementing":[69],"spike":[70,108],"neural":[71],"network":[72],"(SNN)":[73],"\u2013":[74],"based":[75,146],"system":[76],"hardware":[77],"synaptic":[80,137,148],"learning.":[81],"Among":[82],"candidates":[84],"systems,":[88],"resistive":[89],"random-access":[90],"(ReRAM)":[92],"attracting":[94],"attention":[95],"its":[97],"simple":[98],"structure":[99,153],"easy":[101],"design":[102],"silicon-based":[104],"CMOS":[105],"technology.":[106],"By":[107],"timing":[109],"dependent":[110],"plasticity":[111],"(STDP),":[112],"known":[113],"as":[114,165,185],"learning":[116],"rule":[117],"synapses,":[119],"change":[121,131],"weight":[124],"synapses":[126],"equal":[128],"resistance":[134],"ReRAM":[138],"device.Therefore,":[139],"this":[140],"study":[141],"proposed":[142],"nano-wire":[144],"electrode":[145,181],"non-volatile":[147],"devices":[149],"metal-CNTs-oxide-Si":[151],"(MCOS)":[152],"by":[154],"synthesizing":[155],"single-walled":[156],"carbon":[157],"nanotubes":[158],"(SWCNTs).":[159],"SWCNTs":[160],"excellent":[162],"electrical":[163],"properties":[164],"they":[166],"include":[167],"higher":[168],"conductivity":[169],"than":[170,176],"copper":[171],"carrier":[174],"mobility":[175],"Si.":[177],"top":[180],"wire":[182],"was":[183,190,197],"applied":[184],"SWCNTs,":[186],"leakage":[188],"current":[189],"reduced,":[191],"high":[194],"switching":[195],"performance":[196],"shown":[198],"through":[199],"self-integration":[200],"each":[202],"cell.":[203],"Ultimately,":[204],"will":[206],"parameter":[210],"device":[212],"implementation":[213],"improves":[215],"reliability":[217],"stability":[222],"conductance":[224],"filament":[225],"(CF).":[226]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}