{"id":"https://openalex.org/W4223435591","doi":"https://doi.org/10.1109/iceic54506.2022.9748219","title":"Study on ESD Protection Device Based on 4H-SiC GGNMOS with Improved Snapback Characteristics","display_name":"Study on ESD Protection Device Based on 4H-SiC GGNMOS with Improved Snapback Characteristics","publication_year":2022,"publication_date":"2022-02-06","ids":{"openalex":"https://openalex.org/W4223435591","doi":"https://doi.org/10.1109/iceic54506.2022.9748219"},"language":"en","primary_location":{"id":"doi:10.1109/iceic54506.2022.9748219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic54506.2022.9748219","pdf_url":null,"source":{"id":"https://openalex.org/S4363608213","display_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050597504","display_name":"Jang-Han Joung","orcid":null},"institutions":[{"id":"https://openalex.org/I89015989","display_name":"Dankook University","ror":"https://ror.org/058pdbn81","country_code":"KR","type":"education","lineage":["https://openalex.org/I89015989"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jang-Han Joung","raw_affiliation_strings":["Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea"],"affiliations":[{"raw_affiliation_string":"Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","institution_ids":["https://openalex.org/I89015989"]},{"raw_affiliation_string":"Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea","institution_ids":["https://openalex.org/I89015989"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113313772","display_name":"Sang-Wook Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I89015989","display_name":"Dankook University","ror":"https://ror.org/058pdbn81","country_code":"KR","type":"education","lineage":["https://openalex.org/I89015989"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Wook Kwon","raw_affiliation_strings":["Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea"],"affiliations":[{"raw_affiliation_string":"Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","institution_ids":["https://openalex.org/I89015989"]},{"raw_affiliation_string":"Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea","institution_ids":["https://openalex.org/I89015989"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070523053","display_name":"Jun-Ho Kong","orcid":null},"institutions":[{"id":"https://openalex.org/I89015989","display_name":"Dankook University","ror":"https://ror.org/058pdbn81","country_code":"KR","type":"education","lineage":["https://openalex.org/I89015989"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun-Ho Kong","raw_affiliation_strings":["Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea"],"affiliations":[{"raw_affiliation_string":"Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","institution_ids":["https://openalex.org/I89015989"]},{"raw_affiliation_string":"Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea","institution_ids":["https://openalex.org/I89015989"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035804357","display_name":"Byung-Seok Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I89015989","display_name":"Dankook University","ror":"https://ror.org/058pdbn81","country_code":"KR","type":"education","lineage":["https://openalex.org/I89015989"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung-Seok Lee","raw_affiliation_strings":["Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea"],"affiliations":[{"raw_affiliation_string":"Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","institution_ids":["https://openalex.org/I89015989"]},{"raw_affiliation_string":"Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea","institution_ids":["https://openalex.org/I89015989"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065957269","display_name":"Yonz-Seo Koo","orcid":null},"institutions":[{"id":"https://openalex.org/I89015989","display_name":"Dankook University","ror":"https://ror.org/058pdbn81","country_code":"KR","type":"education","lineage":["https://openalex.org/I89015989"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yonz-Seo Koo","raw_affiliation_strings":["Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea"],"affiliations":[{"raw_affiliation_string":"Dankook University,Dept. Engineering of Electronics and Electrical,Yongin,Korea","institution_ids":["https://openalex.org/I89015989"]},{"raw_affiliation_string":"Dept. Engineering of Electronics and Electrical, Dankook University, Yongin, Korea","institution_ids":["https://openalex.org/I89015989"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5050597504"],"corresponding_institution_ids":["https://openalex.org/I89015989"],"apc_list":null,"apc_paid":null,"fwci":0.322,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.33303956,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.998314380645752},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.9067425727844238},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7311522960662842},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5563411712646484},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41981008648872375},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34608253836631775},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33037859201431274},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26556915044784546},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15114080905914307}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.998314380645752},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.9067425727844238},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7311522960662842},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5563411712646484},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41981008648872375},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34608253836631775},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33037859201431274},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26556915044784546},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15114080905914307},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceic54506.2022.9748219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic54506.2022.9748219","pdf_url":null,"source":{"id":"https://openalex.org/S4363608213","display_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8299999833106995,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G1054456558","display_name":null,"funder_award_id":"P0017011","funder_id":"https://openalex.org/F4320322064","funder_display_name":"Korea Institute for Advancement of Technology"},{"id":"https://openalex.org/G3963832062","display_name":null,"funder_award_id":"NRF-2021RIF1A1049866","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G4043872663","display_name":null,"funder_award_id":"IITP-2020-2018-0-01421","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"}],"funders":[{"id":"https://openalex.org/F4320322064","display_name":"Korea Institute for Advancement of Technology","ror":"https://ror.org/015w1qa96"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2029424205","https://openalex.org/W2029457624","https://openalex.org/W2057427834","https://openalex.org/W2776182529","https://openalex.org/W2904863221","https://openalex.org/W2976208640"],"related_works":["https://openalex.org/W2075382567","https://openalex.org/W1490578062","https://openalex.org/W4223435591","https://openalex.org/W2019344161","https://openalex.org/W1496293429","https://openalex.org/W2586740853","https://openalex.org/W2110615434","https://openalex.org/W2169920509","https://openalex.org/W2520615759","https://openalex.org/W2046430182"],"abstract_inverted_index":{"In":[0,41],"this":[1],"paper,":[2],"we":[3],"propose":[4],"a":[5,43,60,62],"new":[6],"structure":[7],"of":[8,50],"4H-SiC-based":[9],"ESD(Electrostatic":[10],"discharge)":[11],"protection":[12],"device":[13,53,63],"with":[14,54,64],"low":[15],"on-resistance":[16],"and":[17,68],"excellent":[18],"high-temperature":[19],"characteristics":[20,33,49,67],"while":[21],"improving":[22],"trigger":[23],"technology":[24],"by":[25],"applying":[26],"floating":[27],"technology.":[28],"By":[29],"TLP":[30],"measurement,":[31],"the":[32,38,47,51],"were":[34],"analyzed":[35],"compared":[36],"to":[37,45],"conventional":[39],"GGNMOS.":[40],"addition,":[42],"method":[44],"improve":[46],"snapback":[48,66],"proposed":[52],"design":[55],"variables":[56],"was":[57,75],"introduced.":[58],"As":[59],"result,":[61],"improved":[65,69],"reliability":[70],"in":[71],"70":[72],"V":[73],"applications":[74],"proposed.":[76]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2026-03-08T08:50:53.379069","created_date":"2025-10-10T00:00:00"}