{"id":"https://openalex.org/W3135071204","doi":"https://doi.org/10.1109/iceic51217.2021.9369734","title":"The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV","display_name":"The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV","publication_year":2021,"publication_date":"2021-01-31","ids":{"openalex":"https://openalex.org/W3135071204","doi":"https://doi.org/10.1109/iceic51217.2021.9369734","mag":"3135071204"},"language":"en","primary_location":{"id":"doi:10.1109/iceic51217.2021.9369734","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic51217.2021.9369734","pdf_url":null,"source":{"id":"https://openalex.org/S4306498844","display_name":"2021 International Conference on Electronics, Information, and Communication (ICEIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058459469","display_name":"Kyuhyun Cha","orcid":null},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyuhyun Cha","raw_affiliation_strings":["Department of Electronic engineering, Sogang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089100211","display_name":"Jongwoon Yoon","orcid":null},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongwoon Yoon","raw_affiliation_strings":["Department of Electronic engineering, Sogang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065755359","display_name":"Jinhee Cheon","orcid":null},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinhee Cheon","raw_affiliation_strings":["Department of Electronic engineering, Sogang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100443621","display_name":"Kwangsoo Kim","orcid":"https://orcid.org/0000-0001-8243-3472"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwangsoo Kim","raw_affiliation_strings":["Department of Electronic engineering, Sogang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I148751991"],"apc_list":null,"apc_paid":null,"fwci":2.035,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.84966219,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8595091104507446},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.6330352425575256},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4797298014163971},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.46009746193885803},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42322826385498047},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40532875061035156},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3753354549407959},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32256871461868286},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1313701570034027},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12096339464187622},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09835976362228394},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.06260842084884644}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8595091104507446},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.6330352425575256},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4797298014163971},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.46009746193885803},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42322826385498047},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40532875061035156},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3753354549407959},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32256871461868286},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1313701570034027},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12096339464187622},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09835976362228394},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.06260842084884644},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceic51217.2021.9369734","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceic51217.2021.9369734","pdf_url":null,"source":{"id":"https://openalex.org/S4306498844","display_name":"2021 International Conference on Electronics, Information, and Communication (ICEIC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 International Conference on Electronics, Information, and Communication (ICEIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G4030296495","display_name":null,"funder_award_id":"IITP-2020-2018-0-01421","funder_id":"https://openalex.org/F4320335489","funder_display_name":"Institute for Information and Communications Technology Promotion"}],"funders":[{"id":"https://openalex.org/F4320335489","display_name":"Institute for Information and Communications Technology Promotion","ror":"https://ror.org/01g0hqq23"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W2046381472","https://openalex.org/W2142138792","https://openalex.org/W2303057663","https://openalex.org/W2607149443","https://openalex.org/W2742251339","https://openalex.org/W2780686853","https://openalex.org/W3021217784","https://openalex.org/W3043616800","https://openalex.org/W3164324953","https://openalex.org/W4299689474","https://openalex.org/W6746991788","https://openalex.org/W6795642141"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2494161373","https://openalex.org/W2055545425","https://openalex.org/W2463866346","https://openalex.org/W2740421154","https://openalex.org/W2022229688","https://openalex.org/W2011757437","https://openalex.org/W4229335874","https://openalex.org/W3014887789","https://openalex.org/W2022789454"],"abstract_inverted_index":{"Split":[0],"Gate":[1],"MOSFET":[2,23,47],"(SG-MOSFET)":[3],"is":[4,117],"one":[5],"of":[6,19,34,55,58,73],"the":[7,12,17,52,59,69,90,104,115,131],"effective":[8,119],"way":[9],"to":[10,89,124],"lower":[11],"gate-drain":[13],"capacitance":[14],"(CGD).":[15],"However,":[16],"applicability":[18],"3.3":[20,35,132],"kV":[21,36],"SiC":[22],"has":[24],"not":[25,102],"been":[26],"studied":[27],"yet.":[28],"In":[29,98],"this":[30],"paper,":[31],"comparative":[32],"study":[33],"4H-SiC":[37],"SG-MOSFET":[38,116],"was":[39],"confirmed":[40],"by":[41,86,96],"TCAD":[42],"simulation":[43],"compared":[44,123],"with":[45],"conventional":[46],"(C-MOSFET).":[48],"As":[49],"a":[50],"result,":[51],"DC":[53],"figure":[54,72],"merit":[56,74],"(DC-FOM)":[57],"two":[60],"structures":[61],"are":[62,76],"747.33":[63],"MW/cm2and":[64],"605.39":[65],"MW/cm2,":[66],"respectively,":[67],"and":[68,79,108,126],"high":[70],"frequency":[71],"(HF-FOM)":[75],"754.66":[77],"m\u03a9\u00b7pF":[78],"574.5":[80],"m\u03a9\u00b7pF.,":[81],"respectively.":[82],"Although":[83],"HF-FOM":[84,122],"improved":[85],"24%":[87],"due":[88],"split":[91],"gate":[92,105],"structure,":[93],"DC-FOM":[94,125],"decreased":[95],"19%.":[97],"addition,":[99],"it":[100],"does":[101],"satisfy":[103],"oxide":[106],"reliability":[107,128],"suffered":[109],"from":[110],"severe":[111],"DIBL":[112],"effect.":[113],"Therefore,":[114],"less":[118],"in":[120,130],"improving":[121],"causes":[127],"problems":[129],"kV.":[133]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}