{"id":"https://openalex.org/W2559067575","doi":"https://doi.org/10.1109/iceee.2016.7751186","title":"Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors","display_name":"Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2559067575","doi":"https://doi.org/10.1109/iceee.2016.7751186","mag":"2559067575"},"language":"en","primary_location":{"id":"doi:10.1109/iceee.2016.7751186","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceee.2016.7751186","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014293858","display_name":"Y. Hernandez-Barrios","orcid":"https://orcid.org/0000-0001-7190-2069"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Centro de Investigaci\u00f3n y de Estudios Avanzados del Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"Y. Hernandez-Barrios","raw_affiliation_strings":["Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico"],"affiliations":[{"raw_affiliation_string":"Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048839004","display_name":"Fernando Avila Herrera","orcid":"https://orcid.org/0000-0003-4418-8052"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Centro de Investigaci\u00f3n y de Estudios Avanzados del Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"F. Avila","raw_affiliation_strings":["Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico"],"affiliations":[{"raw_affiliation_string":"Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018759282","display_name":"M. Estrada","orcid":"https://orcid.org/0000-0002-6244-6492"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Centro de Investigaci\u00f3n y de Estudios Avanzados del Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"M. Estrada","raw_affiliation_strings":["Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico"],"affiliations":[{"raw_affiliation_string":"Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043666384","display_name":"A. Cerdeira","orcid":"https://orcid.org/0000-0002-2114-2468"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Centro de Investigaci\u00f3n y de Estudios Avanzados del Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"A. Cerdeira","raw_affiliation_strings":["Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico"],"affiliations":[{"raw_affiliation_string":"Depto. Ingenier\u00eda El\u00e9ctrica, CINVESTAV-IPN, M\u00e9xico City, M\u00e9xico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019995024","display_name":"Oana Moldovan","orcid":"https://orcid.org/0000-0002-7258-4119"},"institutions":[{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"O. Moldovan","raw_affiliation_strings":["Departament d'Enginyeria Electr\u00f2nica, Universitat Rovira i Virgili, Tarragona, Spain"],"affiliations":[{"raw_affiliation_string":"Departament d'Enginyeria Electr\u00f2nica, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"middle","author":{"id":null,"display_name":"B. Iniguez","orcid":null},"institutions":[{"id":"https://openalex.org/I55952717","display_name":"Universitat Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"B. Iniguez","raw_affiliation_strings":["Departament d'Enginyeria Electr\u00f2nica, Universitat Rovira i Virgili, Tarragona, Spain"],"affiliations":[{"raw_affiliation_string":"Departament d'Enginyeria Electr\u00f2nica, Universitat Rovira i Virgili, Tarragona, Spain","institution_ids":["https://openalex.org/I55952717"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5069991688","display_name":"Rodrigo Picos","orcid":"https://orcid.org/0000-0002-9167-6422"},"institutions":[{"id":"https://openalex.org/I4210151758","display_name":"Fundaci\u00f3 Universitat-Empresa de les Illes Balears","ror":"https://ror.org/04r79j859","country_code":"ES","type":"education","lineage":["https://openalex.org/I4210151758"]},{"id":"https://openalex.org/I50441567","display_name":"Universitat de les Illes Balears","ror":"https://ror.org/03e10x626","country_code":"ES","type":"education","lineage":["https://openalex.org/I50441567"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"R. Picos","raw_affiliation_strings":["Physics Dept, Universitat de les Illes Balears, Illes Balears, Spain"],"affiliations":[{"raw_affiliation_string":"Physics Dept, Universitat de les Illes Balears, Illes Balears, Spain","institution_ids":["https://openalex.org/I4210151758","https://openalex.org/I50441567"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5014293858"],"corresponding_institution_ids":["https://openalex.org/I68368234"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.13367749,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13251","display_name":"Electrical and Thermal Properties of Materials","score":0.9599000215530396,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9588000178337097,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.709206223487854},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.6958222985267639},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.6177259087562561},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.6030064225196838},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5834200978279114},{"id":"https://openalex.org/keywords/saturation-current","display_name":"Saturation current","score":0.5760443210601807},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.5732559561729431},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5556440949440002},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5300253033638},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5184628367424011},{"id":"https://openalex.org/keywords/indium","display_name":"Indium","score":0.4963720440864563},{"id":"https://openalex.org/keywords/gallium","display_name":"Gallium","score":0.48409712314605713},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.46207359433174133},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.44637757539749146},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.4310429096221924},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.34195709228515625},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.332870751619339},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2722890377044678},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21369394659996033},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18149980902671814},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1073731780052185},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.08372005820274353},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.08341649174690247},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08291825652122498},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.07661926746368408},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.07639193534851074}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.709206223487854},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.6958222985267639},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6177259087562561},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.6030064225196838},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5834200978279114},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.5760443210601807},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.5732559561729431},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5556440949440002},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5300253033638},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5184628367424011},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.4963720440864563},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.48409712314605713},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.46207359433174133},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.44637757539749146},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4310429096221924},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34195709228515625},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.332870751619339},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2722890377044678},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21369394659996033},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18149980902671814},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1073731780052185},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.08372005820274353},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08341649174690247},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08291825652122498},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.07661926746368408},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07639193534851074},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceee.2016.7751186","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceee.2016.7751186","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1527774293","https://openalex.org/W1987292005","https://openalex.org/W1998209596","https://openalex.org/W1999589524","https://openalex.org/W2017664626","https://openalex.org/W2050332038","https://openalex.org/W2060671025","https://openalex.org/W2078200122","https://openalex.org/W2203419770","https://openalex.org/W2346046415"],"related_works":["https://openalex.org/W1580385727","https://openalex.org/W2057023681","https://openalex.org/W2043741144","https://openalex.org/W2067236542","https://openalex.org/W1522438678","https://openalex.org/W2897698314","https://openalex.org/W2613776464","https://openalex.org/W2037887846","https://openalex.org/W1971979379","https://openalex.org/W2000966732"],"abstract_inverted_index":{"Amorphous":[0],"oxide":[1],"semiconductor":[2,18],"thin":[3],"film":[4],"transistors":[5],"(AOSTFTs)":[6],"with":[7,97],"SiO":[8],"<sub":[9],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[10],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[11],"and":[12,17,29,40,57,89,131],"Indium-Gallium-Zinc-Oxides":[13],"(IGZO)":[14],"as":[15,45],"dielectric":[16],"layers":[19],"respectively,":[20],"are":[21],"characterized":[22],"in":[23,67],"the":[24,35,54,61,65,68,82,93,104,109,112,119,132,139],"temperature":[25,98],"range":[26],"between":[27],"300":[28,87],"400":[30],"K.":[31],"The":[32],"behavior":[33,136],"of":[34,47,64,95,108,118,134],"threshold":[36],"voltage,":[37],"mobility":[38],"factor":[39],"saturation":[41,113],"coefficient":[42],"is":[43,50,79,122],"analyzed":[44],"function":[46],"temperature.":[48],"It":[49],"shown":[51],"that,":[52],"using":[53],"Unified":[55],"Model":[56],"Extracted":[58],"Method":[59],"(UMEM),":[60],"output":[62],"characteristics":[63],"devices":[66],"linear":[69],"region":[70],"can":[71],"be":[72,128],"well":[73],"modeled":[74],"at":[75,86],"different":[76],"temperatures.":[77],"This":[78,124],"done":[80],"determining":[81],"extracted":[83],"model":[84],"parameters":[85],"K":[88],"taking":[90],"into":[91],"account":[92],"law":[94],"variation":[96],"for":[99],"each":[100],"parameter,":[101],"corresponding":[102],"to":[103,127,138],"specific":[105],"fabrication":[106],"technology":[107],"devices.":[110],"In":[111],"region,":[114],"an":[115],"abnormal":[116],"reduction":[117],"drain":[120],"current":[121],"observed.":[123],"effect":[125],"has":[126],"further":[129],"studied":[130],"representation":[133],"its":[135],"incorporated":[137],"model.":[140]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-03-25T23:56:10.502304","created_date":"2025-10-10T00:00:00"}