{"id":"https://openalex.org/W2045175388","doi":"https://doi.org/10.1109/iceee.2013.6676016","title":"Follower voltage flipped with FGMOS transistors for low-voltage and low-power applications","display_name":"Follower voltage flipped with FGMOS transistors for low-voltage and low-power applications","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2045175388","doi":"https://doi.org/10.1109/iceee.2013.6676016","mag":"2045175388"},"language":"en","primary_location":{"id":"doi:10.1109/iceee.2013.6676016","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceee.2013.6676016","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018713162","display_name":"Jes\u00fas de la Cruz-Alejo","orcid":"https://orcid.org/0000-0001-5072-3985"},"institutions":[{"id":"https://openalex.org/I4399598360","display_name":"Tecnol\u00f3gico de Estudios Superiores de Ecatepec","ror":"https://ror.org/04mc1gv86","country_code":null,"type":"education","lineage":["https://openalex.org/I4399598360"]},{"id":"https://openalex.org/I4210167350","display_name":"Universidad de Ecatepec","ror":"https://ror.org/03501hp09","country_code":"MX","type":"education","lineage":["https://openalex.org/I4210167350"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"Jesus de la Cruz-Alejo","raw_affiliation_strings":["Tecnol\u00f3gico de Estudios Superiores de Ecatepec (TESE)","Tecnol. de Estudios Super. de Ecatepec (TESE), Ecatepec, Mexico"],"affiliations":[{"raw_affiliation_string":"Tecnol\u00f3gico de Estudios Superiores de Ecatepec (TESE)","institution_ids":["https://openalex.org/I4210167350","https://openalex.org/I4399598360"]},{"raw_affiliation_string":"Tecnol. de Estudios Super. de Ecatepec (TESE), Ecatepec, Mexico","institution_ids":["https://openalex.org/I4210167350"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5018713162"],"corresponding_institution_ids":["https://openalex.org/I4210167350","https://openalex.org/I4399598360"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.10587973,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"e82 a","issue":null,"first_page":"473","last_page":"477"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7325195074081421},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.646512508392334},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.5515777468681335},{"id":"https://openalex.org/keywords/total-harmonic-distortion","display_name":"Total harmonic distortion","score":0.5309453010559082},{"id":"https://openalex.org/keywords/buffer-amplifier","display_name":"Buffer amplifier","score":0.5304481387138367},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5052409768104553},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.48509037494659424},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4834181070327759},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4758586287498474},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4656086266040802},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.35307633876800537},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.32748931646347046},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3069584369659424},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20961880683898926}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7325195074081421},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.646512508392334},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.5515777468681335},{"id":"https://openalex.org/C42156128","wikidata":"https://www.wikidata.org/wiki/Q162641","display_name":"Total harmonic distortion","level":3,"score":0.5309453010559082},{"id":"https://openalex.org/C127749002","wikidata":"https://www.wikidata.org/wiki/Q978470","display_name":"Buffer amplifier","level":4,"score":0.5304481387138367},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5052409768104553},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.48509037494659424},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4834181070327759},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4758586287498474},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4656086266040802},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.35307633876800537},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.32748931646347046},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3069584369659424},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20961880683898926},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iceee.2013.6676016","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iceee.2013.6676016","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W128714489","https://openalex.org/W432398127","https://openalex.org/W1566916904","https://openalex.org/W1985463398","https://openalex.org/W2010503152","https://openalex.org/W2019880221","https://openalex.org/W2027104898","https://openalex.org/W2033021170","https://openalex.org/W2036779818","https://openalex.org/W2110555287","https://openalex.org/W2117546478","https://openalex.org/W2143094493","https://openalex.org/W2144893411","https://openalex.org/W2153818315","https://openalex.org/W2157836738","https://openalex.org/W2160142098","https://openalex.org/W2169924428","https://openalex.org/W6658641950"],"related_works":["https://openalex.org/W2110637218","https://openalex.org/W2184605757","https://openalex.org/W3115355038","https://openalex.org/W2538378877","https://openalex.org/W2524786631","https://openalex.org/W1600560344","https://openalex.org/W2136515270","https://openalex.org/W2155579514","https://openalex.org/W1889891652","https://openalex.org/W1518017504"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"a":[3,27,68,100,125,130,135,144],"new":[4],"follower":[5],"voltage":[6,40],"flipped":[7],"(FVF),":[8],"with":[9,23,38,50,67,86,134],"floating":[10],"gate":[11],"CMOS":[12,102],"transistors":[13,25,77],"(FGMOS)":[14],"is":[15,26,58,65,122],"proposed.":[16],"To":[17],"demonstrate":[18],"that":[19,95],"the":[20,56,61,96],"proposed":[21,97],"structure":[22,30],"FGMOS":[24,76],"very":[28],"suitable":[29],"to":[31,60,112],"solve":[32],"problems":[33],"for":[34],"analog":[35],"cells":[36],"design":[37,46,72],"low":[39,42],"and":[41,64,78,116,124,143],"power,":[43],"theoretical":[44,90],"steps":[45],"are":[47,84],"presented":[48],"together":[49],"its":[51],"simulation.":[52],"The":[53,71,92,119],"output":[54,117],"of":[55,74,109,128,132],"FVF":[57,98],"insensitive":[59],"device":[62,113],"parameters":[63],"loaded":[66],"resistive":[69],"load.":[70],"consists":[73],"three":[75],"one":[79],"current":[80],"mirror.":[81],"Simulated":[82],"results":[83,93],"compared":[85],"those":[87],"obtained":[88],"by":[89],"analysis.":[91],"show":[94],"in":[99,107],"0.13\u03bcm":[101],"process":[103],"exhibits":[104],"significant":[105],"benefits":[106],"terms":[108],"linearity,":[110],"insensibility":[111],"parameters,":[114],"bandwidth":[115],"impedance.":[118],"power":[120,126],"supply":[121],"0.8V":[123],"consumption":[127],"81\u03bcW,":[129],"THD":[131],"3%":[133],"0.5V":[136],"<sub":[137],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[138],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">p-p</sub>":[139],"1GHz":[140],"sinewave":[141],"input":[142],"30KHz":[145],"load":[146],"resistance.":[147]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}