{"id":"https://openalex.org/W3002919214","doi":"https://doi.org/10.1109/icecs46596.2019.8965179","title":"Performing Memristor-Aided Logic (MAGIC) using STT-MRAM","display_name":"Performing Memristor-Aided Logic (MAGIC) using STT-MRAM","publication_year":2019,"publication_date":"2019-11-01","ids":{"openalex":"https://openalex.org/W3002919214","doi":"https://doi.org/10.1109/icecs46596.2019.8965179","mag":"3002919214"},"language":"en","primary_location":{"id":"doi:10.1109/icecs46596.2019.8965179","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs46596.2019.8965179","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058094095","display_name":"Jeffry Louis","orcid":null},"institutions":[{"id":"https://openalex.org/I74796645","display_name":"Birla Institute of Technology and Science, Pilani","ror":"https://ror.org/001p3jz28","country_code":"IN","type":"education","lineage":["https://openalex.org/I74796645"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Jeffry Louis","raw_affiliation_strings":["Birla Institute of Technology and Science,Pilani,India","Birla Institute of Technology and Science, Pilani, India"],"affiliations":[{"raw_affiliation_string":"Birla Institute of Technology and Science,Pilani,India","institution_ids":["https://openalex.org/I74796645"]},{"raw_affiliation_string":"Birla Institute of Technology and Science, Pilani, India","institution_ids":["https://openalex.org/I74796645"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055936327","display_name":"Barak Hoffer","orcid":"https://orcid.org/0000-0002-2153-4808"},"institutions":[{"id":"https://openalex.org/I174306211","display_name":"Technion \u2013 Israel Institute of Technology","ror":"https://ror.org/03qryx823","country_code":"IL","type":"education","lineage":["https://openalex.org/I174306211"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Barak Hoffer","raw_affiliation_strings":["Viterbi Faculty of Electrical Engineering, Technion – Israel Institute of Technology,Haifa,Israel","Viterbi Faculty of Electrical Engineering, Technion \u2013 Israel Institute of Technology, Haifa, Israel"],"affiliations":[{"raw_affiliation_string":"Viterbi Faculty of Electrical Engineering, Technion – Israel Institute of Technology,Haifa,Israel","institution_ids":["https://openalex.org/I174306211"]},{"raw_affiliation_string":"Viterbi Faculty of Electrical Engineering, Technion \u2013 Israel Institute of Technology, Haifa, Israel","institution_ids":["https://openalex.org/I174306211"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014138496","display_name":"Shahar Kvatinsky","orcid":"https://orcid.org/0000-0001-7277-7271"},"institutions":[{"id":"https://openalex.org/I174306211","display_name":"Technion \u2013 Israel Institute of Technology","ror":"https://ror.org/03qryx823","country_code":"IL","type":"education","lineage":["https://openalex.org/I174306211"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Shahar Kvatinsky","raw_affiliation_strings":["Viterbi Faculty of Electrical Engineering, Technion – Israel Institute of Technology,Haifa,Israel","Viterbi Faculty of Electrical Engineering, Technion \u2013 Israel Institute of Technology, Haifa, Israel"],"affiliations":[{"raw_affiliation_string":"Viterbi Faculty of Electrical Engineering, Technion – Israel Institute of Technology,Haifa,Israel","institution_ids":["https://openalex.org/I174306211"]},{"raw_affiliation_string":"Viterbi Faculty of Electrical Engineering, Technion \u2013 Israel Institute of Technology, Haifa, Israel","institution_ids":["https://openalex.org/I174306211"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5058094095"],"corresponding_institution_ids":["https://openalex.org/I74796645"],"apc_list":null,"apc_paid":null,"fwci":0.843,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.7518205,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"787","last_page":"790"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8772798776626587},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.8133238554000854},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6840966939926147},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.5145063400268555},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.5035919547080994},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.5026028156280518},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.49714305996894836},{"id":"https://openalex.org/keywords/bottleneck","display_name":"Bottleneck","score":0.48613855242729187},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.47044768929481506},{"id":"https://openalex.org/keywords/in-memory-processing","display_name":"In-Memory Processing","score":0.45898565649986267},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.4397090673446655},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.4141533374786377},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3684261441230774},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35619884729385376},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.33242955803871155},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.257368266582489},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.24350714683532715},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19427374005317688},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08679318428039551}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8772798776626587},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8133238554000854},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6840966939926147},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.5145063400268555},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.5035919547080994},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.5026028156280518},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.49714305996894836},{"id":"https://openalex.org/C2780513914","wikidata":"https://www.wikidata.org/wiki/Q18210350","display_name":"Bottleneck","level":2,"score":0.48613855242729187},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.47044768929481506},{"id":"https://openalex.org/C123593499","wikidata":"https://www.wikidata.org/wiki/Q6008583","display_name":"In-Memory Processing","level":5,"score":0.45898565649986267},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.4397090673446655},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.4141533374786377},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3684261441230774},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35619884729385376},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.33242955803871155},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.257368266582489},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.24350714683532715},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19427374005317688},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08679318428039551},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C194222762","wikidata":"https://www.wikidata.org/wiki/Q114486","display_name":"Query by Example","level":4,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C97854310","wikidata":"https://www.wikidata.org/wiki/Q19541","display_name":"Search engine","level":2,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C164120249","wikidata":"https://www.wikidata.org/wiki/Q995982","display_name":"Web search query","level":3,"score":0.0},{"id":"https://openalex.org/C23123220","wikidata":"https://www.wikidata.org/wiki/Q816826","display_name":"Information retrieval","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs46596.2019.8965179","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs46596.2019.8965179","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1972841535","https://openalex.org/W2026578838","https://openalex.org/W2027384865","https://openalex.org/W2051736202","https://openalex.org/W2081460098","https://openalex.org/W2081729575","https://openalex.org/W2138913040","https://openalex.org/W2407339173","https://openalex.org/W2520467406","https://openalex.org/W2606722458","https://openalex.org/W2626772346","https://openalex.org/W2731422849","https://openalex.org/W2755331355","https://openalex.org/W2765485815","https://openalex.org/W2884227506","https://openalex.org/W2906170453","https://openalex.org/W6643203157","https://openalex.org/W6680744640","https://openalex.org/W6726298260"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W2546997659","https://openalex.org/W2733919783","https://openalex.org/W2425808153","https://openalex.org/W4281561022","https://openalex.org/W2404332818","https://openalex.org/W2626022094","https://openalex.org/W2188761345","https://openalex.org/W1968537616","https://openalex.org/W2563312372"],"abstract_inverted_index":{"Modern":[0],"computers":[1],"suffer":[2,72],"from":[3,73],"a":[4],"limited":[5,74],"data":[6,41],"transfer":[7],"rate":[8],"between":[9],"the":[10,13,18,36,40,124,140,151,155,173,188],"memory":[11,31,58,81],"and":[12,30,71,90,95,160,176],"processing":[14,29],"units.":[15],"One":[16],"of":[17,157,170],"attractive":[19,102],"potential":[20],"solutions":[21],"to":[22,27,99,122,149],"overcome":[23],"this":[24,108],"bottleneck":[25],"is":[26,42,83,88,96],"combine":[28],"by":[32,49,118],"performing":[33],"computing":[34],"in":[35,136,154],"same":[37],"location":[38],"where":[39],"stored.":[43],"Processing-in-memory":[44],"(PIM)":[45],"has":[46,91],"been":[47],"demonstrated":[48],"memristor-aided":[50],"logic":[51],"(MAGIC)":[52],"operations":[53,113],"using":[54],"resistive":[55],"random":[56,79],"access":[57,80],"(RRAM)":[59],"memristive":[60,85],"devices":[61,67],"within":[62,114],"crossbar":[63],"arrays.":[64],"Nevertheless,":[65],"RRAM":[66],"are":[68],"relatively":[69],"slow":[70],"endurance.":[75],"Spin-transfer":[76],"torque":[77],"magnetoresistive":[78],"(STT-MRAM)":[82],"another":[84],"technology,":[86],"which":[87],"faster":[89],"practically":[92],"unlimited":[93],"endurance":[94],"therefore":[97],"considered":[98],"be":[100],"an":[101,115],"technology":[103],"for":[104,127,172,187],"cache-level":[105],"memories.":[106],"In":[107],"paper,":[109],"we":[110],"demonstrate":[111],"MAGIC":[112],"STT-MRAM":[116],"array":[117],"supplying":[119],"voltages":[120],"suitable":[121],"achieve":[123],"current":[125],"required":[126],"MRAM":[128],"device":[129,161],"switching.":[130],"The":[131,163],"proposed":[132,152],"circuit":[133,164],"was":[134,183],"evaluated":[135],"SPICE":[137],"simulations":[138,148],"with":[139],"GlobalFoundries":[141],"22nm":[142],"CMOS-MRAM":[143],"process,":[144],"including":[145],"Monte":[146],"Carlo":[147],"verify":[150],"design":[153],"presence":[156],"process":[158],"variation":[159],"mismatch.":[162],"showed":[165],"more":[166],"than":[167],"90%":[168],"chance":[169],"functioning":[171],"{1":[174],"1}":[175,190],"{0":[177,189],"0}":[178],"input":[179],"cases":[180],"while":[181],"it":[182],"about":[184],"85%":[185],"correct":[186],"case.":[191]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":2}],"updated_date":"2026-03-06T13:50:29.536080","created_date":"2025-10-10T00:00:00"}