{"id":"https://openalex.org/W2311577122","doi":"https://doi.org/10.1109/icecs.2015.7440366","title":"A 1.6-nA quiescent current bandgap reference in 130-nm CMOS technology","display_name":"A 1.6-nA quiescent current bandgap reference in 130-nm CMOS technology","publication_year":2015,"publication_date":"2015-12-01","ids":{"openalex":"https://openalex.org/W2311577122","doi":"https://doi.org/10.1109/icecs.2015.7440366","mag":"2311577122"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2015.7440366","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2015.7440366","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5035890216","display_name":"Amr Kamel","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Amr Kamel","raw_affiliation_strings":["EECE Department, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"EECE Department, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061566407","display_name":"Sameh A. Ibrahim","orcid":"https://orcid.org/0000-0001-8049-1441"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Sameh Ibrahim","raw_affiliation_strings":["EECE Department, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"EECE Department, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5035890216"],"corresponding_institution_ids":["https://openalex.org/I107720978"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14484101,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"512","last_page":"515"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.9092303514480591},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.7951200008392334},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7836980819702148},{"id":"https://openalex.org/keywords/power-supply-rejection-ratio","display_name":"Power supply rejection ratio","score":0.7817140817642212},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.6200706362724304},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5756474137306213},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5257492661476135},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.5200469493865967},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.5104166865348816},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5017788410186768},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.4828122556209564},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.45511797070503235},{"id":"https://openalex.org/keywords/current-mirror","display_name":"Current mirror","score":0.44782838225364685},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.44052591919898987},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.43132638931274414},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3960978388786316},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.28698623180389404},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2571031451225281},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2547133266925812},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.09948530793190002}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.9092303514480591},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.7951200008392334},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7836980819702148},{"id":"https://openalex.org/C15892472","wikidata":"https://www.wikidata.org/wiki/Q1482413","display_name":"Power supply rejection ratio","level":4,"score":0.7817140817642212},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.6200706362724304},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5756474137306213},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5257492661476135},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.5200469493865967},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.5104166865348816},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5017788410186768},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.4828122556209564},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45511797070503235},{"id":"https://openalex.org/C173966970","wikidata":"https://www.wikidata.org/wiki/Q786012","display_name":"Current mirror","level":4,"score":0.44782838225364685},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.44052591919898987},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.43132638931274414},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3960978388786316},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.28698623180389404},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2571031451225281},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2547133266925812},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.09948530793190002},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2015.7440366","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2015.7440366","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8799999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1859921603","https://openalex.org/W1971118309","https://openalex.org/W1993030101","https://openalex.org/W2008663203","https://openalex.org/W2035904654","https://openalex.org/W2057673963","https://openalex.org/W2146324717","https://openalex.org/W2146892924","https://openalex.org/W2160509435","https://openalex.org/W6638931232","https://openalex.org/W6652629242"],"related_works":["https://openalex.org/W2347289947","https://openalex.org/W2388657413","https://openalex.org/W2372624045","https://openalex.org/W1970618459","https://openalex.org/W3128511607","https://openalex.org/W2487240096","https://openalex.org/W1987313072","https://openalex.org/W2318279732","https://openalex.org/W4390187654","https://openalex.org/W2383762148"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3],"ultra-low":[4],"quiescent":[5],"current":[6,21],"bandgap":[7],"reference.":[8],"The":[9,23,42,61],"BGR":[10,43],"is":[11,65],"based":[12],"on":[13],"a":[14,39],"resistor-less":[15],"topology":[16],"to":[17,70],"reduce":[18],"area":[19],"and":[20,49,75],"consumption.":[22],"proposed":[24],"design":[25],"was":[26],"implemented":[27],"in":[28],"TSMC":[29],"130-nm":[30],"CMOS":[31],"technology.":[32],"It":[33],"only":[34],"consumes":[35],"1.6":[36],"nA":[37],"from":[38,68],"1.8-V":[40],"supply.":[41],"provides":[44],"about":[45],"770-mV":[46],"reference":[47],"voltage":[48],"has":[50],"power":[51],"supply":[52],"rejection":[53],"ratio":[54],"(PSRR)":[55],"of":[56],"57":[57],"dB":[58],"at":[59],"DC.":[60],"temperature":[62],"coefficient":[63],"(TC)":[64],"5":[66],"ppm/\u00b0C":[67],"-40":[69],"125":[71],"\u00b0C.":[72],"Process":[73],"variation":[74],"mismatches":[76],"are":[77],"kept":[78],"as":[79,81],"low":[80],"1.4%":[82],"per":[83],"sigma.":[84]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}