{"id":"https://openalex.org/W2310834573","doi":"https://doi.org/10.1109/icecs.2015.7440347","title":"An 8kb SRAM macro in 65nm for ultra-low voltage applications operating from 1.2V to 0.5V","display_name":"An 8kb SRAM macro in 65nm for ultra-low voltage applications operating from 1.2V to 0.5V","publication_year":2015,"publication_date":"2015-12-01","ids":{"openalex":"https://openalex.org/W2310834573","doi":"https://doi.org/10.1109/icecs.2015.7440347","mag":"2310834573"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2015.7440347","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2015.7440347","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078474156","display_name":"Mostafa F. Farid","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Mostafa F. Farid","raw_affiliation_strings":["Integrated Circuits laboratory, Ain-Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Integrated Circuits laboratory, Ain-Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026453564","display_name":"Amgad A. Ghonem","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Amgad A. Ghonem","raw_affiliation_strings":["Integrated Circuits laboratory, Ain-Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Integrated Circuits laboratory, Ain-Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000468193","display_name":"Mohamed Dessouky","orcid":"https://orcid.org/0000-0003-3829-6284"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Mohamed Dessouky","raw_affiliation_strings":["Integrated Circuits laboratory, Ain-Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Integrated Circuits laboratory, Ain-Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5078474156"],"corresponding_institution_ids":["https://openalex.org/I107720978"],"apc_list":null,"apc_paid":null,"fwci":0.1973,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.61287018,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"458","last_page":"461"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9257407784461975},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.6804864406585693},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.664924144744873},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6593483686447144},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.621222734451294},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5727325677871704},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.534206748008728},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4963908791542053},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4782649278640747},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.47823137044906616},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4513305127620697},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.45037567615509033},{"id":"https://openalex.org/keywords/ultra-low-power","display_name":"Ultra low power","score":0.44920647144317627},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.44584667682647705},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3296186625957489},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.32120442390441895},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29725098609924316},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2347407341003418},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.12451177835464478},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0732409656047821}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9257407784461975},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.6804864406585693},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.664924144744873},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6593483686447144},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.621222734451294},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5727325677871704},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.534206748008728},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4963908791542053},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4782649278640747},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.47823137044906616},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4513305127620697},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.45037567615509033},{"id":"https://openalex.org/C3017773396","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Ultra low power","level":4,"score":0.44920647144317627},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.44584667682647705},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3296186625957489},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.32120442390441895},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29725098609924316},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2347407341003418},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.12451177835464478},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0732409656047821},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2015.7440347","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2015.7440347","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1970601044","https://openalex.org/W2046515116","https://openalex.org/W2049565704","https://openalex.org/W2071159343","https://openalex.org/W2073922353","https://openalex.org/W2095913060","https://openalex.org/W2100483769","https://openalex.org/W2106339466","https://openalex.org/W2107702386","https://openalex.org/W2168159483","https://openalex.org/W2310488720","https://openalex.org/W4239551022","https://openalex.org/W6668704051"],"related_works":["https://openalex.org/W2524786631","https://openalex.org/W2468619362","https://openalex.org/W3148554323","https://openalex.org/W1619389265","https://openalex.org/W2155579514","https://openalex.org/W1837570977","https://openalex.org/W2610960993","https://openalex.org/W2136758643","https://openalex.org/W2915016853","https://openalex.org/W2127660232"],"abstract_inverted_index":{"Low-voltage":[0],"operation":[1,48],"for":[2,49],"SRAM":[3,28,51],"memories":[4],"is":[5,77,88],"attractive":[6],"because":[7],"it":[8],"decreases":[9],"leakage":[10],"and":[11,32,52,56],"active":[12],"power.":[13],"Hence,":[14],"energy":[15],"constrained":[16],"applications,":[17],"where":[18],"performance":[19],"requirements":[20],"are":[21,60],"not":[22],"aggressive":[23],"benefit":[24],"significantly":[25],"from":[26],"an":[27],"that":[29,85],"offers":[30],"read":[31],"write":[33],"functionality":[34],"at":[35,100],"the":[36,44,86,101],"lowest":[37],"possible":[38],"supply":[39],"voltage.":[40],"This":[41],"paper":[42],"explores":[43],"limits":[45],"of":[46,75,90,98],"low-voltage":[47],"traditional":[50],"periphery":[53],"circuits.":[54],"Read":[55],"Write":[57],"assist":[58],"techniques":[59],"implemented":[61],"to":[62,93],"reach":[63],"such":[64],"a":[65,69,96],"low":[66],"voltage":[67],"with":[68,95],"6T":[70],"bitcell.":[71],"A":[72],"test":[73],"macro":[74],"8-Kbit":[76],"designed":[78],"in":[79],"65nm":[80],"CMOS":[81],"technology.":[82],"Simulations":[83],"show":[84],"design":[87],"capable":[89],"working":[91],"down":[92],"0.5V":[94],"frequency":[97],"380-KHz":[99],"worst":[102],"process":[103],"corner.":[104]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}