{"id":"https://openalex.org/W2065148861","doi":"https://doi.org/10.1109/icecs.2012.6463535","title":"Validation and analysis of negative differential resistance of single-electron transistor with conductance model","display_name":"Validation and analysis of negative differential resistance of single-electron transistor with conductance model","publication_year":2012,"publication_date":"2012-12-01","ids":{"openalex":"https://openalex.org/W2065148861","doi":"https://doi.org/10.1109/icecs.2012.6463535","mag":"2065148861"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2012.6463535","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2012.6463535","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034521175","display_name":"Xiaobao Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaobao Chen","raw_affiliation_strings":["Institute of Microelectronics, School of Computer, National University of Defense Technology, Changsha, Hunan, China","Inst. of Microelectron., Nat. Univ. of Defense Technol., Changsha, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, School of Computer, National University of Defense Technology, Changsha, Hunan, China","institution_ids":["https://openalex.org/I170215575","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Nat. Univ. of Defense Technol., Changsha, China","institution_ids":["https://openalex.org/I170215575"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100534277","display_name":"Zuocheng Xing","orcid":null},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zuocheng Xing","raw_affiliation_strings":["Institute of Microelectronics, School of Computer, National University of Defense Technology, Changsha, Hunan, China","Inst. of Microelectron., Nat. Univ. of Defense Technol., Changsha, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, School of Computer, National University of Defense Technology, Changsha, Hunan, China","institution_ids":["https://openalex.org/I170215575","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Nat. Univ. of Defense Technol., Changsha, China","institution_ids":["https://openalex.org/I170215575"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059001985","display_name":"Bingcai Sui","orcid":null},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bingcai Sui","raw_affiliation_strings":["Institute of Microelectronics, School of Computer, National University of Defense Technology, Changsha, Hunan, China","Inst. of Microelectron., Nat. Univ. of Defense Technol., Changsha, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, School of Computer, National University of Defense Technology, Changsha, Hunan, China","institution_ids":["https://openalex.org/I170215575","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Inst. of Microelectron., Nat. Univ. of Defense Technol., Changsha, China","institution_ids":["https://openalex.org/I170215575"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2136,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.57447111,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"60","issue":null,"first_page":"813","last_page":"816"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10913","display_name":"Molecular Junctions and Nanostructures","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/coulomb-blockade","display_name":"Coulomb blockade","score":0.860805094242096},{"id":"https://openalex.org/keywords/conductance","display_name":"Conductance","score":0.7739564776420593},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6781373023986816},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5832052230834961},{"id":"https://openalex.org/keywords/oscillation","display_name":"Oscillation (cell signaling)","score":0.49826741218566895},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4597809910774231},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.42844358086586},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.4249812364578247},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42178764939308167},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38885462284088135},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38282981514930725},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3301176428794861},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3209807276725769},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2961655855178833},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.28206756711006165},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.2419552505016327},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23054027557373047},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.13268157839775085}],"concepts":[{"id":"https://openalex.org/C117206207","wikidata":"https://www.wikidata.org/wiki/Q475790","display_name":"Coulomb blockade","level":4,"score":0.860805094242096},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.7739564776420593},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6781373023986816},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5832052230834961},{"id":"https://openalex.org/C2778439541","wikidata":"https://www.wikidata.org/wiki/Q7106412","display_name":"Oscillation (cell signaling)","level":2,"score":0.49826741218566895},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4597809910774231},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.42844358086586},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4249812364578247},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42178764939308167},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38885462284088135},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38282981514930725},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3301176428794861},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3209807276725769},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2961655855178833},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.28206756711006165},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.2419552505016327},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23054027557373047},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.13268157839775085},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2012.6463535","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2012.6463535","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.46000000834465027,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W607927168","https://openalex.org/W1162070008","https://openalex.org/W1495591055","https://openalex.org/W1581828036","https://openalex.org/W1974433560","https://openalex.org/W1984169328","https://openalex.org/W2004811717","https://openalex.org/W2015793208","https://openalex.org/W2026930992","https://openalex.org/W2038051219","https://openalex.org/W2059304510","https://openalex.org/W2102053012","https://openalex.org/W2102986313","https://openalex.org/W2122481434","https://openalex.org/W2126965725"],"related_works":["https://openalex.org/W2011243653","https://openalex.org/W2065287395","https://openalex.org/W2433142619","https://openalex.org/W3106100591","https://openalex.org/W3098818885","https://openalex.org/W2980828928","https://openalex.org/W2049024384","https://openalex.org/W2419485056","https://openalex.org/W2000841447","https://openalex.org/W2941383270"],"abstract_inverted_index":{"Despite":[0],"many":[1],"years":[2],"of":[3,8,13,22,34,54,64,73,89,92,115,149],"effort,":[4],"the":[5,30,60,71,74,93,96,108,113,116,120,133,146],"precise":[6],"mechanism":[7],"negative":[9],"differential":[10],"resistance":[11],"(NDR)":[12],"single-electron":[14,75],"transistor":[15,76],"(SET)":[16],"remains":[17],"unclear,":[18],"and":[19,32,51,67,79,85,104,119,143],"this":[20,41,136],"lack":[21],"knowledge":[23],"has":[24],"become":[25],"a":[26,46,82],"major":[27],"obstacle":[28],"in":[29],"research":[31],"development":[33],"new":[35],"electronic":[36],"devices":[37],"to":[38,49,107,126,141],"make":[39],"use":[40],"effect.":[42],"This":[43],"paper":[44],"proposes":[45],"conductance":[47,91],"model":[48],"validate":[50,142],"analysis":[52,84],"NDR":[53,121,147],"SET,":[55],"which":[56],"is":[57,130],"based":[58],"on":[59],"classical":[61],"orthodox":[62],"theory":[63],"single":[65],"electron":[66],"obtained":[68],"by":[69],"analyzing":[70],"source":[72,88],"leakage":[77,90],"conductance,":[78],"carried":[80],"out":[81],"detailed":[83],"discussion.":[86],"The":[87],"SET":[94],"with":[95,112],"source-drain":[97,117],"voltage":[98],"changes":[99],"occur":[100],"periodic":[101],"oscillation":[102],"attenuation":[103],"gradually":[105],"converge":[106],"intrinsic":[109],"conductivity":[110],"values":[111],"increase":[114],"voltage,":[118],"effect":[122,148],"can":[123,138],"be":[124,139],"attributed":[125],"Coulomb":[127],"blockade.":[128],"It":[129],"showed":[131],"from":[132],"results":[134],"that":[135],"method":[137],"used":[140],"preliminary":[144],"explain":[145],"SET.":[150]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}