{"id":"https://openalex.org/W2109694890","doi":"https://doi.org/10.1109/icecs.2010.5724587","title":"Short-circuit energy dissipation model for sub-100nm CMOS buffers","display_name":"Short-circuit energy dissipation model for sub-100nm CMOS buffers","publication_year":2010,"publication_date":"2010-12-01","ids":{"openalex":"https://openalex.org/W2109694890","doi":"https://doi.org/10.1109/icecs.2010.5724587","mag":"2109694890"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2010.5724587","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2010.5724587","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 17th IEEE International Conference on Electronics, Circuits and Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088545509","display_name":"L. Bisdounis","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Labros Bisdounis","raw_affiliation_strings":["Electronics Laboratory, Electrical Engineering Department, Technological Educational Institute of Patras, Patras, Greece","Electronics Laboratory, Electrical Engineering Department, Technological Educational Institute of Patras, GR-26334, Greece"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics Laboratory, Electrical Engineering Department, Technological Educational Institute of Patras, Patras, Greece","institution_ids":[]},{"raw_affiliation_string":"Electronics Laboratory, Electrical Engineering Department, Technological Educational Institute of Patras, GR-26334, Greece","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5088545509"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.7802,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.84961222,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"47","issue":null,"first_page":"615","last_page":"618"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7606754899024963},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.6838685274124146},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6696407794952393},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.635592520236969},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6079548597335815},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5377623438835144},{"id":"https://openalex.org/keywords/adiabatic-circuit","display_name":"Adiabatic circuit","score":0.5319623947143555},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5119991898536682},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.5016961097717285},{"id":"https://openalex.org/keywords/velocity-saturation","display_name":"Velocity saturation","score":0.48644304275512695},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.43872204422950745},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42214539647102356},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.4117993116378784},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39933347702026367},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36219358444213867},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3580312132835388},{"id":"https://openalex.org/keywords/pass-transistor-logic","display_name":"Pass transistor logic","score":0.29329437017440796},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19775792956352234}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7606754899024963},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.6838685274124146},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6696407794952393},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.635592520236969},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6079548597335815},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5377623438835144},{"id":"https://openalex.org/C87606752","wikidata":"https://www.wikidata.org/wiki/Q4682637","display_name":"Adiabatic circuit","level":5,"score":0.5319623947143555},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5119991898536682},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.5016961097717285},{"id":"https://openalex.org/C187370908","wikidata":"https://www.wikidata.org/wiki/Q7426597","display_name":"Velocity saturation","level":5,"score":0.48644304275512695},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.43872204422950745},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42214539647102356},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.4117993116378784},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39933347702026367},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36219358444213867},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3580312132835388},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.29329437017440796},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19775792956352234},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2010.5724587","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2010.5724587","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 17th IEEE International Conference on Electronics, Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W61072085","https://openalex.org/W1996623312","https://openalex.org/W2055510065","https://openalex.org/W2071693325","https://openalex.org/W2108695529","https://openalex.org/W2118108626","https://openalex.org/W2118477157","https://openalex.org/W2123597521","https://openalex.org/W2128107124","https://openalex.org/W2129305518","https://openalex.org/W2134067926","https://openalex.org/W2138244835","https://openalex.org/W2138444824","https://openalex.org/W3143002681","https://openalex.org/W4243164749","https://openalex.org/W6602472416"],"related_works":["https://openalex.org/W2096561527","https://openalex.org/W2580743037","https://openalex.org/W2162463323","https://openalex.org/W2965791759","https://openalex.org/W1991384788","https://openalex.org/W2418067545","https://openalex.org/W2988242922","https://openalex.org/W4210368030","https://openalex.org/W2042750210","https://openalex.org/W1521268501"],"abstract_inverted_index":{"A":[0],"considerable":[1],"part":[2,26],"of":[3,27,43,53,65,100],"the":[4,30,44,51,58,66,75,79,98],"energy":[5,32,94],"dissipation":[6],"in":[7,82],"CMOS":[8,45,131],"buffers":[9],"is":[10,34,38,71],"due":[11],"to":[12,73,78],"short-circuit":[13,31],"currents.":[14],"In":[15],"this":[16,25],"paper,":[17],"an":[18,86],"accurate,":[19],"analytical":[20],"and":[21,57,111,115,120],"compact":[22],"model":[23,37,70,95,124],"for":[24,88,97,128,133],"energy,":[28],"i.e.":[29],"dissipation,":[33],"presented.":[35],"The":[36,92,123,143],"based":[39],"on":[40],"closed-form":[41],"expressions":[42],"inverter":[46,141],"output":[47,121],"waveform,":[48],"which":[49],"include":[50],"influences":[52,99],"both":[54],"transistor":[55,90],"currents":[56],"gate-drain":[59,114],"coupling":[60],"capacitance.":[61],"An":[62],"accurate":[63],"version":[64],"alpha-power":[67],"law":[68],"MOSFET":[69],"used":[72],"relate":[74],"terminal":[76],"voltages":[77],"drain":[80],"current":[81],"sub-100nm":[83],"devices,":[84],"with":[85,149],"extension":[87],"varying":[89],"widths.":[91],"resulting":[93],"accounts":[96],"input":[101,135],"voltage":[102],"transition":[103,136],"time,":[104],"transistors'":[105],"sizes,":[106],"device":[107],"carrier":[108],"velocity":[109],"saturation":[110],"narrow-width":[112],"effects,":[113],"short-circuiting":[116],"transistor's":[117],"gate-source":[118],"capacitances,":[119],"load.":[122],"has":[125],"been":[126],"validated":[127],"a":[129],"90-nm":[130],"technology,":[132],"different":[134],"times,":[137],"capacitive":[138],"loads":[139],"&":[140],"sizes.":[142],"results":[144],"show":[145],"very":[146],"good":[147],"agreement":[148],"BSIM4":[150],"HSPICE":[151],"simulations.":[152]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}