{"id":"https://openalex.org/W2102300926","doi":"https://doi.org/10.1109/icecs.2009.5410801","title":"Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs","display_name":"Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs","publication_year":2009,"publication_date":"2009-12-01","ids":{"openalex":"https://openalex.org/W2102300926","doi":"https://doi.org/10.1109/icecs.2009.5410801","mag":"2102300926"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2009.5410801","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2009.5410801","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108261641","display_name":"M.A. Abdi","orcid":null},"institutions":[{"id":"https://openalex.org/I50219554","display_name":"University of Laghouat","ror":"https://ror.org/018bbh535","country_code":"DZ","type":"education","lineage":["https://openalex.org/I50219554"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"M.A. Abdi","raw_affiliation_strings":["Department of Electronics, University of Laghouat, Laghouat, Algeria","Department of Electronics, University of Laghouat, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Laghouat, Laghouat, Algeria","institution_ids":["https://openalex.org/I50219554"]},{"raw_affiliation_string":"Department of Electronics, University of Laghouat, Algeria","institution_ids":["https://openalex.org/I50219554"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044226348","display_name":"F. Djeffal","orcid":"https://orcid.org/0000-0003-0742-5864"},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"F. Djeffal","raw_affiliation_strings":["LEA, Department of Electronics, University of Batna, Batna, Algeria","LEA, Department of Electronics, University of Batna 05000, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LEA, Department of Electronics, University of Batna, Batna, Algeria","institution_ids":["https://openalex.org/I162489102"]},{"raw_affiliation_string":"LEA, Department of Electronics, University of Batna 05000, Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112090902","display_name":"M. Meguellati","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"M. Meguellati","raw_affiliation_strings":["LEA, Department of Electronics, University of Batna, Batna, Algeria","LEA, Department of Electronics, University of Batna 05000, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LEA, Department of Electronics, University of Batna, Batna, Algeria","institution_ids":["https://openalex.org/I162489102"]},{"raw_affiliation_string":"LEA, Department of Electronics, University of Batna 05000, Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028199228","display_name":"D. Arar","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"D. Arar","raw_affiliation_strings":["LEA, Department of Electronics, University of Batna, Batna, Algeria","LEA, Department of Electronics, University of Batna 05000, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LEA, Department of Electronics, University of Batna, Batna, Algeria","institution_ids":["https://openalex.org/I162489102"]},{"raw_affiliation_string":"LEA, Department of Electronics, University of Batna 05000, Algeria","institution_ids":["https://openalex.org/I162489102"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.12922635,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"49","issue":null,"first_page":"892","last_page":"895"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.8743866682052612},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8172276020050049},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.760475218296051},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.7271145582199097},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.6558362245559692},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.5975159406661987},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5870248675346375},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"Drain-induced barrier lowering","score":0.5690253973007202},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5617877244949341},{"id":"https://openalex.org/keywords/channel-length-modulation","display_name":"Channel length modulation","score":0.5191178321838379},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4943370819091797},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4893476366996765},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.44631561636924744},{"id":"https://openalex.org/keywords/reverse-short-channel-effect","display_name":"Reverse short-channel effect","score":0.4384317994117737},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4228299856185913},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4211253821849823},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28321170806884766},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2815236449241638},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.255609393119812},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21886253356933594},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1852354109287262}],"concepts":[{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.8743866682052612},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8172276020050049},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.760475218296051},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7271145582199097},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.6558362245559692},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.5975159406661987},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5870248675346375},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.5690253973007202},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5617877244949341},{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.5191178321838379},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4943370819091797},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4893476366996765},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.44631561636924744},{"id":"https://openalex.org/C33556034","wikidata":"https://www.wikidata.org/wiki/Q7318266","display_name":"Reverse short-channel effect","level":5,"score":0.4384317994117737},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4228299856185913},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4211253821849823},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28321170806884766},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2815236449241638},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.255609393119812},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21886253356933594},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1852354109287262},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2009.5410801","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2009.5410801","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.4699999988079071}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1966483501","https://openalex.org/W1985408847","https://openalex.org/W2059195193","https://openalex.org/W2086757543","https://openalex.org/W2090904958","https://openalex.org/W2149255559"],"related_works":["https://openalex.org/W1835724189","https://openalex.org/W1968280774","https://openalex.org/W3081352656","https://openalex.org/W2545799744","https://openalex.org/W2056603227","https://openalex.org/W1979130778","https://openalex.org/W2018121445","https://openalex.org/W2136400454","https://openalex.org/W3026133845","https://openalex.org/W1982268051"],"abstract_inverted_index":{"Due":[0],"to":[1,26,49],"the":[2,5,28,33,54,57,75,80],"advancement":[3],"of":[4,53,56],"oxide":[6],"and":[7,24,31,51,72],"channel":[8,13],"materials":[9],"engineering,":[10],"nanoscale":[11,58],"graded":[12],"gate":[14],"stack":[15],"(GCGAS)":[16],"Double":[17],"Gate":[18],"(DG)":[19],"MOSFET":[20,60],"has":[21],"been":[22],"investigated":[23],"expected":[25],"suppress":[27],"short-channel":[29],"effects":[30],"improve":[32,52],"subthreshold":[34,62],"performances.":[35],"So,":[36],"in":[37,61],"this":[38],"paper":[39],"a":[40],"new":[41],"two-dimensional":[42],"analytical":[43],"threshold":[44],"voltage":[45],"model":[46],"is":[47],"proposed":[48],"study":[50],"behavior":[55],"DG":[59],"domain":[63],"for":[64],"nanoelectronics":[65],"applications.":[66],"The":[67],"developed":[68],"approaches":[69],"are":[70],"verified":[71],"validated":[73],"by":[74],"good":[76],"agreement":[77],"found":[78],"with":[79],"numerical":[81],"simulation.":[82]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}