{"id":"https://openalex.org/W2002139288","doi":"https://doi.org/10.1109/icecs.2008.4674885","title":"A low power sub 1V 3.5-ppm/&amp;#x00B0;C voltage reference featuring subthreshold MOSFETs","display_name":"A low power sub 1V 3.5-ppm/&amp;#x00B0;C voltage reference featuring subthreshold MOSFETs","publication_year":2008,"publication_date":"2008-08-01","ids":{"openalex":"https://openalex.org/W2002139288","doi":"https://doi.org/10.1109/icecs.2008.4674885","mag":"2002139288"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2008.4674885","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2008.4674885","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037467491","display_name":"T. Shihabudheen","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"T. Shihabudheen","raw_affiliation_strings":["College of Engineering Trivandrum, Thiruvananthapuram, Kerala, IN"],"affiliations":[{"raw_affiliation_string":"College of Engineering Trivandrum, Thiruvananthapuram, Kerala, IN","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079568528","display_name":"V. Suresh Babu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"V. Suresh Babu","raw_affiliation_strings":["Department of Electronics and Communication, College of Engineering Trivandrum, Kerala, India","Department of Electronics and Communication, College of Engineering, Kerala, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication, College of Engineering Trivandrum, Kerala, India","institution_ids":[]},{"raw_affiliation_string":"Department of Electronics and Communication, College of Engineering, Kerala, India","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075385207","display_name":"M. R. Baiju","orcid":"https://orcid.org/0000-0003-4356-8221"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M.R. Baiju","raw_affiliation_strings":["Department of Electronics and Communication, College of Engineering Trivandrum, Kerala, India","Department of Electronics and Communication, College of Engineering, Kerala, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication, College of Engineering Trivandrum, Kerala, India","institution_ids":[]},{"raw_affiliation_string":"Department of Electronics and Communication, College of Engineering, Kerala, India","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5037467491"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.47882376,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.67123869,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.8787738084793091},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7223851084709167},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6407015323638916},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6036261320114136},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5766029357910156},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5748768448829651},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5674909949302673},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.4845973253250122},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.4822600483894348},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4739004671573639},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46081751585006714},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4011506736278534},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3851560354232788},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3759809732437134},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.37344884872436523},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.32987180352211},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32939785718917847},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.28859007358551025}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.8787738084793091},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7223851084709167},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6407015323638916},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6036261320114136},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5766029357910156},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5748768448829651},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5674909949302673},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4845973253250122},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.4822600483894348},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4739004671573639},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46081751585006714},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4011506736278534},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3851560354232788},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3759809732437134},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.37344884872436523},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.32987180352211},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32939785718917847},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.28859007358551025},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2008.4674885","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2008.4674885","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8600000143051147}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1501285939","https://openalex.org/W1504370941","https://openalex.org/W1566916904","https://openalex.org/W1597620877","https://openalex.org/W2005544085","https://openalex.org/W2032998311","https://openalex.org/W2034366236","https://openalex.org/W2067658274","https://openalex.org/W2091673386","https://openalex.org/W2092954710","https://openalex.org/W2109526415","https://openalex.org/W2118389586","https://openalex.org/W2133201500","https://openalex.org/W2141911137","https://openalex.org/W2157109715","https://openalex.org/W2522991329"],"related_works":["https://openalex.org/W2162700382","https://openalex.org/W2009852498","https://openalex.org/W1991521745","https://openalex.org/W3004587385","https://openalex.org/W4220771873","https://openalex.org/W2109147260","https://openalex.org/W2786811717","https://openalex.org/W2069364674","https://openalex.org/W2062767191","https://openalex.org/W2117738807"],"abstract_inverted_index":{"This":[0,15],"paper":[1],"proposes":[2],"a":[3,66,78],"new":[4],"subbandgap":[5],"scalable":[6],"voltage":[7,17,59,74],"reference":[8,73],"based":[9],"on":[10],"subthreshold":[11],"operation":[12],"of":[13,69,75,81],"MOSFET.":[14],"low":[16,18],"power":[19],"circuit":[20,26],"offers":[21],"below":[22],"1V":[23],"operation.":[24],"The":[25,50],"is":[27,61,83],"designed":[28],"in":[29],"90nm":[30],"CMOS":[31],"technology":[32],"with":[33,77],"V":[34],"<inf":[35],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[36],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">THn</inf>":[37],"=":[38,42],"|":[39,41],"VTHpB":[40],"0.25V":[43],"at":[44],"27\u00b0C":[45],"using":[46],"BSIM4.4":[47],"model":[48],"card.":[49],"SPICE":[51],"simulation":[52],"results":[53],"reveal":[54],"that":[55],"the":[56],"minimum":[57],"supply":[58],"required":[60],"only":[62],"0.7V":[63],"and":[64],"consumes":[65],"maximum":[67],"current":[68],"2.63\u03bcA.":[70],"An":[71],"average":[72],"254mV":[76],"temperature":[79],"coefficient":[80],"3.5ppm/\u00b0C":[82],"achieved.":[84]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}