{"id":"https://openalex.org/W2532571947","doi":"https://doi.org/10.1109/icecs.2003.1301829","title":"Operating mode analysis of deep-submicron CMOS buffers driving inductive interconnects","display_name":"Operating mode analysis of deep-submicron CMOS buffers driving inductive interconnects","publication_year":2004,"publication_date":"2004-06-03","ids":{"openalex":"https://openalex.org/W2532571947","doi":"https://doi.org/10.1109/icecs.2003.1301829","mag":"2532571947"},"language":"en","primary_location":{"id":"doi:10.1109/icecs.2003.1301829","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2003.1301829","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International Conference on Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047864758","display_name":"G. Cappuccino","orcid":"https://orcid.org/0000-0001-8838-3525"},"institutions":[{"id":"https://openalex.org/I45204951","display_name":"University of Calabria","ror":"https://ror.org/02rc97e94","country_code":"IT","type":"education","lineage":["https://openalex.org/I45204951"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"G. Cappuccino","raw_affiliation_strings":["Department of Electronics, Computer Science and Systenis, University of Calabria, Rende, Cosenza, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, Computer Science and Systenis, University of Calabria, Rende, Cosenza, Italy","institution_ids":["https://openalex.org/I45204951"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5047864758"],"corresponding_institution_ids":["https://openalex.org/I45204951"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.34503989,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"491","last_page":"494"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7398996353149414},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7068498730659485},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.6672770380973816},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6361043453216553},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6115403175354004},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5615597367286682},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.449320912361145},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40868324041366577},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40594542026519775},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3537274897098541},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20981034636497498},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11838281154632568},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.07336235046386719}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7398996353149414},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7068498730659485},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.6672770380973816},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6361043453216553},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6115403175354004},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5615597367286682},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.449320912361145},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40868324041366577},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40594542026519775},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3537274897098541},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20981034636497498},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11838281154632568},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.07336235046386719},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecs.2003.1301829","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecs.2003.1301829","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International Conference on Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1897134872","https://openalex.org/W2109817800","https://openalex.org/W2134067926","https://openalex.org/W2141335062","https://openalex.org/W2157298832","https://openalex.org/W2167478831"],"related_works":["https://openalex.org/W2204879205","https://openalex.org/W2096437374","https://openalex.org/W1943174035","https://openalex.org/W1928481607","https://openalex.org/W3135165657","https://openalex.org/W1485582195","https://openalex.org/W57337972","https://openalex.org/W2313216219","https://openalex.org/W2109314689","https://openalex.org/W1911543349"],"abstract_inverted_index":{"The":[0,41],"actual":[1],"operation":[2,53,77],"of":[3,26,34,52,78,90,97,133],"a":[4,98,121,130],"complementary":[5],"metal-oxide-semiconductor":[6],"(CMOS)":[7],"gate":[8],"driving":[9],"long":[10,27],"resistance":[11],"inductance-capacitance":[12],"(RLC)":[13],"interconnects":[14,29],"is":[15,107,118],"investigated":[16],"in":[17,103],"this":[18],"paper.":[19],"Using":[20],"the":[21,31,46,49,76,79,88,91,94,104],"alpha-law":[22],"model,":[23],"inductance":[24],"effects":[25],"on-chip":[28],"on":[30],"operating":[32],"region":[33,65,68,106],"submicron":[35],"CMOS":[36],"line-driver":[37],"transistors":[38,96],"are":[39],"analysed.":[40],"study":[42],"demonstrates":[43],"that":[44],"both":[45],"linear":[47,67],"and":[48,61],"saturation":[50,64,105],"modes":[51],"may":[54],"be":[55,71],"equally":[56],"present":[57],"during":[58],"buffer":[59],"switching":[60,92],"thus":[62],"neither":[63],"nor":[66],"model":[69],"can":[70],"used":[72],"solely":[73],"to":[74,126],"characterise":[75],"transistors.":[80],"A":[81],"computationally":[82],"efficient":[83],"closed":[84],"form":[85],"expression":[86],"for":[87,114,129],"portion":[89],"time":[93],"MOS":[95],"line":[99,134],"driver":[100],"actually":[101],"operate":[102],"also":[108],"presented.":[109],"Proposed":[110],"formulae,":[111],"particularly":[112],"suitable":[113],"CAD":[115],"tools":[116],"implementation,":[117],"characterised":[119],"by":[120],"15%":[122],"accuracy":[123],"as":[124],"compared":[125],"SPICE":[127],"simulations":[128],"wide":[131],"range":[132],"parameters.":[135]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}