{"id":"https://openalex.org/W7152378033","doi":"https://doi.org/10.1109/icecet63943.2025.11472302","title":"A Novel and Producible CFP LDMOS device with Counter Drift and Counter Body Doping","display_name":"A Novel and Producible CFP LDMOS device with Counter Drift and Counter Body Doping","publication_year":2025,"publication_date":"2025-07-03","ids":{"openalex":"https://openalex.org/W7152378033","doi":"https://doi.org/10.1109/icecet63943.2025.11472302"},"language":null,"primary_location":{"id":"doi:10.1109/icecet63943.2025.11472302","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecet63943.2025.11472302","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 5th International Conference on Electrical, Computer and Energy Technologies (ICECET)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033323529","display_name":"Shaoxin Yu","orcid":"https://orcid.org/0009-0005-1274-3789"},"institutions":[{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Shaoxin Yu","raw_affiliation_strings":["South China University of Technology,School of Microelectronics,Guangzhou,China"],"affiliations":[{"raw_affiliation_string":"South China University of Technology,School of Microelectronics,Guangzhou,China","institution_ids":["https://openalex.org/I90610280"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5133300500","display_name":"Rongsheng Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rongsheng Chen","raw_affiliation_strings":["South China University of Technology,School of Microelectronics,Guangzhou,China"],"affiliations":[{"raw_affiliation_string":"South China University of Technology,School of Microelectronics,Guangzhou,China","institution_ids":["https://openalex.org/I90610280"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5119347757","display_name":"Xiaolong Zhao","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiaolong Zhao","raw_affiliation_strings":["Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China"],"affiliations":[{"raw_affiliation_string":"Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5133250528","display_name":"Zhibin Liang","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhibin Liang","raw_affiliation_strings":["Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China"],"affiliations":[{"raw_affiliation_string":"Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5119347759","display_name":"Yan Jin","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yan Jin","raw_affiliation_strings":["Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China"],"affiliations":[{"raw_affiliation_string":"Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029682520","display_name":"Shaohai Zeng","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shaohai Zeng","raw_affiliation_strings":["Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China"],"affiliations":[{"raw_affiliation_string":"Runpeng Semiconductor Technology Inc.,R&#x0026;D Department,Shenzhen,China","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5124273073","display_name":"Hao Fang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087349","display_name":"China Resources (China)","ror":"https://ror.org/0026yhs27","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210087349"]},{"id":"https://openalex.org/I77566578","display_name":"United Microelectronics (United States)","ror":"https://ror.org/00vrhw316","country_code":"US","type":"company","lineage":["https://openalex.org/I4210161555","https://openalex.org/I77566578"]}],"countries":["CN","US"],"is_corresponding":false,"raw_author_name":"Hao Fang","raw_affiliation_strings":["China Resources Microelectronics Co., Ltd Inc.,R&#x0026;D Department,Wuxi,China"],"affiliations":[{"raw_affiliation_string":"China Resources Microelectronics Co., Ltd Inc.,R&#x0026;D Department,Wuxi,China","institution_ids":["https://openalex.org/I4210087349","https://openalex.org/I77566578"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5033323529"],"corresponding_institution_ids":["https://openalex.org/I90610280"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.66417475,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.28110000491142273,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.28110000491142273,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.10090000182390213,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12692","display_name":"Magnetic Field Sensors Techniques","score":0.041200000792741776,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5990999937057495},{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.46299999952316284},{"id":"https://openalex.org/keywords/geiger-counter","display_name":"Geiger counter","score":0.42570000886917114},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.298799991607666},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.28029999136924744}],"concepts":[{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5990999937057495},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5540000200271606},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5514000058174133},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.46299999952316284},{"id":"https://openalex.org/C88033656","wikidata":"https://www.wikidata.org/wiki/Q48171","display_name":"Geiger counter","level":2,"score":0.42570000886917114},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3601999878883362},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.34150001406669617},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.298799991607666},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.28029999136924744},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2777000069618225},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.25529998540878296}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icecet63943.2025.11472302","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icecet63943.2025.11472302","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 5th International Conference on Electrical, Computer and Energy Technologies (ICECET)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320337504","display_name":"Research and Development","ror":"https://ror.org/027s68j25"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W4225484431","https://openalex.org/W4226017396","https://openalex.org/W4297786268","https://openalex.org/W4360770956","https://openalex.org/W4389169635","https://openalex.org/W4389610397","https://openalex.org/W4392607863","https://openalex.org/W4396944131","https://openalex.org/W4399145802","https://openalex.org/W4400975377"],"related_works":[],"abstract_inverted_index":{"Recent":[0],"years,":[1],"the":[2,59,77,87,128,137,177],"CFP":[3,40,108],"(Contact":[4],"field":[5],"plate)":[6],"LDMOS":[7],"(Lateral":[8],"double":[9],"diffused":[10],"metal":[11],"oxide":[12],"semiconductor)":[13],"devices":[14,109,145,156,161],"have":[15,110],"been":[16,111],"wildly":[17],"produced":[18],"in":[19,153],"IC":[20],"(Integrated":[21],"circuit)":[22],"industry,":[23],"according":[24],"to":[25],"its":[26],"advantages":[27],"of":[28,58,100],"low":[29],"on-resistance":[30],"and":[31,48,63,72,86,104,113,141,158,181,187],"high":[32],"switch":[33],"efficiency.":[34],"In":[35],"this":[36],"paper,":[37],"a":[38],"novel":[39],"device":[41],"with":[42],"C-N<inf":[43,49,60,64,88,101,105,138,142,178,182],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[44,50,61,65,80,89,93,102,106,139,143,179,183],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">D</inf>":[45,62,81,103,140,180],"(Counter-drift":[46],"doping)":[47,54],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">B</inf>":[51,66,90,107,144,184],"(Counter-":[52],"body":[53],"is":[55],"introduced.":[56],"Effects":[57],"on":[67],"FOM":[68,119],"(Figures-of-merit)":[69],"are":[70,170],"investigated":[71],"simulated":[73],"results":[74,134],"indicate":[75,135],"that":[76,136],"C-":[78],"N<inf":[79],"increases":[82],"BV":[83],"(Breakdown":[84],"voltage)":[85],"reduces":[91],"R<inf":[92],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on,sp</inf>":[94],"(Specific":[95],"on-resistance)":[96],"significantly.":[97],"A":[98],"series":[99],"fabricated,":[112],"from":[114],"silicon":[115],"measurement":[116],"results,":[117],"their":[118],"character":[120],"achieve":[121],"an":[122,147],"improvement":[123],"by":[124],"around":[125],"18.9%~31.2%.":[126],"Furthermore,":[127],"TLP":[129],"(Transmission":[130],"line":[131],"pulse)":[132],"test":[133],"own":[146],"ideal":[148],"SOA":[149],"(Safe":[150],"operation":[151],"area)":[152],"both":[154],"typical":[155],"(W=10\u00b5m)":[157],"very":[159,189],"large":[160],"(W=":[162],"2mm);":[163],"The":[164],"HCI":[165],"(Hot":[166],"carrier":[167],"injection)":[168],"lifetime":[169],"all":[171],"above":[172],"0.2year":[173],"standard.":[174],"It":[175],"demonstrate":[176],"devices'":[185],"robustness":[186],"practicability":[188],"well.":[190]},"counts_by_year":[],"updated_date":"2026-04-11T06:13:24.991567","created_date":"2026-04-10T00:00:00"}